J. Guerrero-Sánchez

ORCID: 0000-0003-1457-9677
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About
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Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • ZnO doping and properties
  • Magnetic properties of thin films
  • Catalytic Processes in Materials Science
  • Heusler alloys: electronic and magnetic properties
  • Chalcogenide Semiconductor Thin Films
  • GaN-based semiconductor devices and materials
  • Perovskite Materials and Applications
  • Metal and Thin Film Mechanics
  • Topological Materials and Phenomena
  • Electronic and Structural Properties of Oxides
  • Molecular Junctions and Nanostructures
  • Quantum Dots Synthesis And Properties
  • Electrocatalysts for Energy Conversion
  • Advancements in Battery Materials
  • Gas Sensing Nanomaterials and Sensors
  • Boron and Carbon Nanomaterials Research
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • Copper-based nanomaterials and applications
  • Advanced Condensed Matter Physics
  • Advanced Chemical Physics Studies

Universidad Nacional Autónoma de México
2016-2025

Institut Català de Nanociència i Nanotecnologia
2016-2025

Center for Scientific Research and Higher Education at Ensenada
2023-2024

Universidad Autónoma de Baja California
2021-2023

El Colegio de la Frontera Norte
2022

Ensenada Institute of Technology
2016-2021

Ohio University
2015-2019

The Ohio State University
2019

Benemérita Universidad Autónoma de Puebla
2012-2016

Abstract The oxygen reduction reaction (ORR) is of paramount interest, in the context both alternative energy applications fuel cells and for on‐site hydrogen peroxide (H 2 O ) production environmental remediation applications. Using theoretical experimental methods, mechanism involved ORR studied on nitrogen‐doped graphitic carbon materials. two principal pathways are four‐electron pathway producing water O), or two‐electron leading to formation H . An atomistic step by proposed understand...

10.1002/aenm.202002459 article EN Advanced Energy Materials 2020-11-12

In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With buckled hexagonal structure, the good dynamical thermal stability of GeS monolayer is confirmed. PBE(HSE06)-based calculations assert indirect gap semiconductor nature two-dimensional (2D) material with relatively large band 2.48(3.28) eV. The creation single Ge vacancy magnetizes total magnetic moment 1.99

10.1039/d3ra07942b article EN cc-by-nc RSC Advances 2024-01-01

Selectivity in catalysis is key to many industrial processes, yet it often difficult control. One promising approach use so-called single-atom catalysts, whereby one catalytic component isolated within a second phase add but otherwise unavailable functionality. Here, we report the of metal alloys consisting Pt single atoms diluted Cu nanoparticles selectively promote hydrogenation C═O bonds unsaturated aldehydes, reaction interest fine chemical manufacturing. Our rationale, that surfaces may...

10.1021/acscatal.9b02547 article EN ACS Catalysis 2019-09-11

A comprehensive study of the kinetics catalytic hydrogenation unsaturated aldehydes, in particular cinnamaldehyde, promoted by CuPtx/SBA-15 single-atom alloy catalysts was carried out order to identify trends as a function composition bimetallic nanoparticles, that is, value x. The optimum performance reported us recently [ ACS Catal. 2019, 9, 9150−9157] terms selectivity toward formation cinnamyl alcohol, desired product, catalyst with x = 0.005 corroborated. rapid decrease seen activity...

10.1021/acscatal.9b05407 article EN ACS Catalysis 2020-02-27

Chemical adsorption of non-metal atoms may lead to the emergence novel features in two-dimensional (2D) materials. In this work, electronic and magnetic properties graphene-like XC (X = Si Ge) monolayers with adsorbed H, O, F are investigated using spin-polarized first-principles calculations. Deeply negative energies suggest strong chemical on monolayers. Despite non-magnetic nature both host monolayer adatom, SiC is significantly magnetized by H inducing semiconductor nature. Similar...

10.1039/d3ra01372c article EN cc-by-nc RSC Advances 2023-01-01

By first-principles calculation and experimental measurements, we investigated the lithiation process in Ti4C3 Ti2Ta2C3 MXenes. Our results show successful synthesis of MXene with an interlayer distance 0.4 nm, which supposes correct delamination material. measurements also demonstrate that double-ordered alloy can store 4 times amount lithium than pristine MXene. DFT calculation, stability TixTa4–xC3 According to calculations, five MXenes are stable, where most stable 50% Ta/Ti ratio...

10.1021/acsaem.1c03239 article EN ACS Applied Energy Materials 2022-01-13

Defect engineering and doping are proposed as efficient approaches to create new 2D multifunctional materials from a non-magnetic semiconductor PdO 2 monolayer.

10.1039/d3ra08866a article EN cc-by-nc RSC Advances 2024-01-01

Abstract In this work, point defects are proposed to modify the electronic and magnetic properties of SiP monolayer. Pristine monolayer is a non‐magnetic semiconductor 2D material with energy gap 1.52(2.21) eV as predicted by PBE(HSE06) functional. Single Si vacancy (), Si+P divacancy substituting one P atom () magnetize significantly Herein, total moments between 1.00 2.00 obtained . contrast, no magnetism induced single exchanging pair Si‐P positions (). Moreover, significant magnetization...

10.1002/adts.202400320 article EN Advanced Theory and Simulations 2024-05-05

In this work, efficient approaches to modify the electronic and magnetic properties of SnSSe monolayer are proposed. A pristine is a nonmagnetic two-dimensional (2D) semiconductor material with an energy gap 0.96(1.64) eV obtained from PBE (HSE06)-based calculations. Different single vacancies, divacancies, trivacancies make appearance middle-gap states tune structure without producing magnetism. Specifically, metallized by chalcogen vacancy. Meanwhile, large band-gap reductions on order...

10.1021/acsaelm.4c00341 article EN ACS Applied Electronic Materials 2024-05-13

The magnetic structure, magnetoresistance, and Hall effect of non-centrosymmetric semimetal NdAlGe are investigated revealing an unusual state anomalous transport properties that associated with the electronic structure this compound. magnetization magnetoresistance measurements both highly anisotropic indicate Ising-like system. is complex in it involves three ordering vectors including incommensurate spin density wave commensurate ferrimagnetic zero field. We have discovered a large...

10.1103/physrevb.107.224414 article EN Physical review. B./Physical review. B 2023-06-13

Using density functional theory, we have studied a graphene structure with single C vacancy, doped three pyridinic N atoms and metallic adatom (Fe, Ni, Cu) as catalyst for the oxygen reduction reaction (ORR), one of most critical reactions in electrocatalysis. Nitrogen(N)-doped graphitic structures are promising candidates ORR, incorporation adatoms could improve their activity. Previous experimental theoretical reports indicate that Fe favors four-electron pathway, resulting formation water...

10.1021/acsaem.4c00518 article EN ACS Applied Energy Materials 2024-05-28

Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and correlate the magnetism with structure probed at atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, their associated helimagnetic domain walls, contrast 3Q state seen bulk. Combining our surface measurements micromagnetic modeling, we deduce three-dimensional orientation wavevectors gain detailed understanding...

10.1126/science.abd9225 article EN Science 2021-12-16

The pristine InSe monolayer is a nonmagnetic indirect gap semiconductor. Furthermore, doping with IVA- and VA-group atoms at both In Se sublattices explored to achieve effective band structure magnetism engineering in this 2D material.

10.1039/d4na01013b article EN cc-by-nc Nanoscale Advances 2025-01-01

Effective band structure and magnetism engineering of MoSSe monolayer is proposed by doping. Results demonstrate the emergence feature-rich electronic magnetic properties that are desirable for optoelectronic spintronic applications.

10.1039/d5ra00561b article EN cc-by-nc RSC Advances 2025-01-01
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