A5100427386- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Physics of Superconductivity and Magnetism
- Catalytic Processes in Materials Science
- ZnO doping and properties
- Magnetic and transport properties of perovskites and related materials
- Transition Metal Oxide Nanomaterials
- Advanced Condensed Matter Physics
- Rare-earth and actinide compounds
- Molecular Junctions and Nanostructures
- Catalysis and Hydrodesulfurization Studies
- Photonic Crystals and Applications
- Catalysis and Oxidation Reactions
- Iron-based superconductors research
- Luminescence Properties of Advanced Materials
- Advanced Chemical Physics Studies
- Quantum Dots Synthesis And Properties
- Inorganic Chemistry and Materials
- Magnetic properties of thin films
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- Hydrogen Storage and Materials
- Photonic and Optical Devices
- Corrosion Behavior and Inhibition
- Nuclear Materials and Properties
Chongqing Medical University
2023-2025
Stony Brook University
2024-2025
Central South University
2024
Sichuan University
2022-2024
Bioscience (China)
2024
Stony Brook School
2024
Chongqing Medical and Pharmaceutical College
2024
Hunan University
2020-2024
Tongji University
2023
University of California, Riverside
2016-2023
Macroscopic and nanoscopic current−voltage measurements reveal asymmetries in the DC electrical conductivity through Langmuir−Blodgett multilayers even monolayers of γ-(n-hexadecyl)quinolinum tricyanoquinodimethanide, C16H33Q-3CNQ (5). These are due to a transition ground-state zwitterion an excited-state conformer which is probably neutral. Unimolecular rectification by 5 unequivocally confirmed.
The origin of the almost unique combination optical transparency and ability to bipolar dope tin monoxide is explained using a soft hard X-ray photoemission spectroscopy, O K-edge emission absorption density functional theory calculations incorporating van der Waals corrections. We reveal that high hole mobility, ability, result (i) significant Sn 5s character at valence band maximum (due 2p–Sn antibonding associated with lone pair distortion), (ii) small indirect gap ∼0.7 eV (Γ–M) much...
We report the simultaneous measurement of structural and electronic components metal-insulator transition (MIT) VO2 using electron photoelectron spectroscopies microscopies. show that these evolve over different temperature scales, are separated by an unusual monocliniclike metallic phase. Our results provide conclusive evidence new phase, recently identified in high-pressure nonequilibrium measurements, is accessible thermodynamic at ambient pressure, we discuss implications observations on...
Corrosion protection of metal has become an important and urgent topic, which requires the development inexpensive, environmentally friendly, highly efficient corrosion inhibitor. Herein, a sweet potato leaf extract (SPL) was obtained by simple water-based extraction method then as green inhibitor for 6N01 Al alloy in seawater well investigated weight loss various electrochemical tests. Fourier transform infrared (FT-IR) ultraviolet-visible (UV-vis) spectroscopies were carried out to...
Selectivity in catalysis is key to many industrial processes, yet it often difficult control. One promising approach use so-called single-atom catalysts, whereby one catalytic component isolated within a second phase add but otherwise unavailable functionality. Here, we report the of metal alloys consisting Pt single atoms diluted Cu nanoparticles selectively promote hydrogenation C═O bonds unsaturated aldehydes, reaction interest fine chemical manufacturing. Our rationale, that surfaces may...
Alkanoic acids adsorb weakly to the native oxide surface of aluminum. Treating first with an alkoxide zirconium provides for strong subsequent adsorption alkanoic acid. The formation interfacial carboxylate gives rise this adhesion. A combination quartz crystal microbalance and ultrahigh-vacuum IR spectroscopic techniques were used establish stoichiometry structural features film.
Electronic structures at the silicon/molecule interface were studied by X-ray photoelectron spectroscopy, ultraviolet inverse photoemission and Kelvin probe techniques. The heterojunctions fabricated direct covalent grafting of a series molecules (−C6H4−X, with X = NMe2, NH2, NO2, Mo6 oxide cluster) onto surface four types silicon substrates (both n- p-type different dopant densities). electronic interfaces thus systematically tuned in accordance electron-donating ability, redox capability,...
In this Letter, we investigate the electronic structure of a spin-triplet superconductor candidate ${\mathrm{CeRh}}_{2}{\mathrm{As}}_{2}$ using high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations. Notably, possible Fermi surface nesting hints at connections to magnetic excitation or quadrupole wave phenomena, elucidating superconducting mechanisms. Measured band structures reveal primarily localized $4f$ electrons, with minor itinerant...
We present a detailed study of the electronic structure europium nitride (EuN), comparing spectroscopic data to results advanced calculations. demonstrate epitaxial growth EuN films, and show that in contrast other rare-earth nitrides successful requires an activated nitrogen source. Synchrotron-based x-ray spectroscopy shows samples contain predominantly Eu${}^{3+}$, but with small varying quantity Eu${}^{2+}$ we associate defects, most likely vacancies. X-ray absorption emission...
Abstract We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO 3 -xBiFeO (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal repeatable polarization inversion by poling, manifesting its potential for read-write operation NVM...
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for film x = 0.67. higher vanadium concentration (x > 0.67) metallic, and electrical resistivity followed T^2 law corresponding to Fermi liquid system. In insulating region < 0.67, dependence 0.5 0.33 can be scaled variable range hopping model....