A5038076874- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- 2D Materials and Applications
- Semiconductor materials and devices
- Dental Radiography and Imaging
- Cell Image Analysis Techniques
- Infrared Thermography in Medicine
- Nanowire Synthesis and Applications
- Cutaneous Melanoma Detection and Management
- Acoustic Wave Resonator Technologies
- Thermal properties of materials
- Photocathodes and Microchannel Plates
- Advanced Thermoelectric Materials and Devices
- Boron and Carbon Nanomaterials Research
- Spectroscopy Techniques in Biomedical and Chemical Research
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Optical Coherence Tomography Applications
- Metal and Thin Film Mechanics
Nanjing University
2022-2025
University of Science and Technology of China
2021-2024
The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell observing photothermoelectric bipolar impulse characteristic. By leveraging the distinct thermoelectric properties GaON/GaN, rapid generation hot carriers establishes bidirectional instantaneous gradients in concentration and temperature within nanoscale heterostructure...
Abstract We have investigated homoepitaxy of AlN films grown by molecular beam epitaxy (MBE) on AlN/sapphire templates. The MBE at the low temperature range, which is suitable for AlGaN, encounters significant challenge in preventing Al droplet and pits, since migration desorption rate atom are very low. In contrast, elevating growth temperature, such a difficulty can be effectively overcome, we were able to grow with much improved surface morphology obtained step flow mode without any...
In this work, fine carrier transport and recombination processes in p-NiO gate AlGaN/GaN high electron mobility transistors were investigated by analyzing their electroluminescence under forward bias, with photoluminescence spectrum as a reference. Red luminescence peak of 1.9 eV was captured when the bias voltage exceeded 4 V, which verified to originate from tunneling enhanced interface injected holes metal spilled electrons 2DEG channel at type-II band aligned p-NiO/AlGaN heterostructure...
A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform compatible with commercial AlGaN/GaN n-channel electronics, but performance has been far behind. In this work, 2DHGs in GaN/AlGaN/GaN heterostructures grown plasma-assisted molecular beam epitaxy have investigated. The Al composition...
Abstract We have investigated an Al modulation epitaxy (AME) method to obtain step-flow growth of droplet free AlN layers by plasma assisted molecular beam (MBE). At the usual temperature (Al)GaN/AlN heterostructures, atom migration and desorption rate are very low consequently it is difficult avoid formation droplets on front conventional MBE method. By adopting AME method, such a difficulty has been effectively overcome step flow mode clearly observed. optimizing time sequence, namely, N...
Abstract The objective of this study was to discriminate thyroid and parathyroid tissues using Raman spectroscopy combined with an improved support vector machine (SVM) algorithm. In surgery, there is a risk inadvertently removing the glands. At present, lack research on tissues. article, samples were obtained from 43 individuals for analysis. This employed partial least squares (PLS) reduce dimensions data, three optimization algorithms are used improve classification accuracy SVM algorithm...
Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance photodetectors. Here, we observe distinctive microplasma breakdown behavior in AlGaN-based avalanche photodiodes with artificial mesa architecture. At 107 V voltage, the photocurrent increases sharply whereas dark current intriguingly remains at extremely low level 0.1 nA as applied voltage increases. Simultaneously, significant blue luminescence phenomenon is observed edge...
In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area investigation. This paper proposes novel structure that employs hexagonal semiconductor GaN flanked by two half-metallic CrN layers. The stability proposed is verified via first-principles calculations, which indicate good thermodynamic magnetic stability. transport...
Abstract Using a first-principles approach, this study delves into the effects of strain and electrostatic doping on electronic magnetic properties GaN/VTe 2 van der Waals (vdW) heterostructure. The results reveal that when vdW heterostructure is doped with 0.1 h /0.2 charge, its magnetization direction undergoes remarkable reversal, shifting from out-of-plane orientation to in-plane direction. Therefore, we conduct thorough investigation influence electron orbitals anisotropy energy. In...
The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. difficulties are basically originated from the fundamental material properties AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to random alloys, m and n numbers monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity AlN/GaN DAs grown by molecular beam epitaxy (MBE), transmission electron...
Abstract We report molecular beam epitaxial growth and electrical ultraviolet light emitting properties of (AlN)m/(GaN)n superlattices (SLs), where m n represent the numbers monolayers. Clear satellite peaks observed in XRD 2θ-ω scans TEM images evidence formation clear periodicity atomically sharp interfaces. For SLs with an average Al composition 50%, we have obtained electron density up to 4.48×10 19 cm -3 a resistivity 0.002 Ω·cm, hole 1.83×10 18 3.722 both at room temperature....
Sentinel lymph node biopsy (SLNB) is recommended to identify micrometastasis for stage T1b or greater primary cutaneous melanoma, which impacts prognosis and adjuvant therapy recommendations.1 SLNB requires preoperative intraoperative lymphatic mapping. The most common methods are vital blue dyes, gamma probe, 99m-technetium (99mTc), indocyanine green (ICG) fluorescence imaging. However, dyes unsuitable as the sole mapping agent because they not evident until nodes surgically exposed.