A5090558480- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Copper Interconnects and Reliability
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
- Non-Invasive Vital Sign Monitoring
- Integrated Circuits and Semiconductor Failure Analysis
- Additive Manufacturing and 3D Printing Technologies
- Molecular Junctions and Nanostructures
- Silicon and Solar Cell Technologies
- Plant Disease Resistance and Genetics
- Plant Pathogenic Bacteria Studies
- Bluetooth and Wireless Communication Technologies
- Plant-Microbe Interactions and Immunity
- Conducting polymers and applications
- Dielectric materials and actuators
- Nanofabrication and Lithography Techniques
- Nanomaterials and Printing Technologies
- Advancements in Photolithography Techniques
Xiamen University
2024-2025
Sichuan Agricultural University
2024
University at Albany, State University of New York
2023
IBM (United States)
2019-2021
GlobalFoundries (United States)
2016
GlobalFoundries (Germany)
2014
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels first time. Dual strained channels have also implemented to enhance mobility high performance applications.
Abstract Ionic devices find applications such as flexible electronics and biomedicines function by exploiting hybrid circuits of mobile ions electrons. However, the poor interfacial compatibility hard electronic conductors with soft ionic in leads to low deformability, sensitivity, electromechanical responses, stability. Herein, an interpenetrating interface between silicone‐modified polyurethane/carbon nanotube ionoelastomers device using situ polymerization is fabricated. A robust...
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally stacked Nanosheet device structures with Lmetal 12 nm. The comparison of BDI scheme vs punch through stopper (PTS) has been systematically studied. By comparing off-state leakage current, short channel behavior and effective capacitance (Ceff) for both schemes, we show that could potentially provide: 1) good immunity sub-channel due to process variation (from parasitic "fat-Fin" which unique in...
Abstract In the wake of COVID‐19 pandemic, there is an increased demand for humidity sensors that can accurately detect targets without direct contact, driving advancements in contactless human‐machine interaction (HMI) and non‐invasive medical diagnostics. However, it difficult traditional individual to acquire field information reliable HMI. Here, ionogel film‐based flexible fast‐response sensing array developed via a scalable, efficient, modified spin‐coating‐based fabrication strategy...
We demonstrate, for the first time, Vertical-Transport Nanosheet (VTFET) CMOS logic transistors at sub-45nm gate pitch on bulk silicon wafers. show that VTFETs present an opportunity to break Contacted Gate Pitch (CGP) barrier faced by Lateral-Transport FETs. offer scaling relief electrostatics and parasitics decoupling key device features from CGP-scaling roadblocks. First, nMOS/pMOS VTFET are reported with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Hydrogel epidermis electrodes have demonstrated remarkable potential for stable electrophysiological signal acquisition in the field of intelligent prostheses. However, current hydrogel face challenges providing on-demand antibacterial effects due to dynamic skin conditions, such as sweating, which may induce inflammation, thus limiting their practical applications. Herein, an active electrode is prepared by encapsulating Staphylococcus epidermidis (S. epidermidis) into based on strategy...
Electrode patches are becoming increasingly vital in the fields of wearable electronics and physiological health monitoring. However, nondegradable nature complex functionalization process traditional dry electrodes limit their widespread use. In contrast, mycelium-based biovegan leather offers an ideal alternative for flexible electrodes, providing benefits such as biodegradability ease preparation. To overcome mechanical performance stability challenges inherent pure mycelium, this study...
We discuss the transition to Ti based silicides for source-drain (SD) contacts 3D FinFET devices starting from 14nm node & beyond. Reductions in n-FET p-FET contact resistances are reported with optimization of metallization process dopant concentrations. The SiGe epitaxy and addition a thin interfacial NiPt(10%) found significantly improve performance.
In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm metallization 48nm ever reported in FinFET on both bulk SOI substrates. A 0.053um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> SRAM bit-cell is corresponding Static Noise Margin (SNM) 140mV at 0.75V. Intensive multi-patterning various self-aligned processes have been developed...
Zinc finger proteins (ZFPs) are important regulators in abiotic and biotic stress tolerance plants. However, the role of ZFPs wheat responding to pathogen infection is poorly understood. In this study, we found TaZFP8-5B was down-regulated by Puccinia striiformis f. sp. tritici (Pst) infection. possesses a single C2H2-type zinc domain with plant-specific QALGGH motif, an EAR motif (LxLxL) at C-terminus. The represses trans-activation ability TaZFP8-5B. Knocking down expression TaZFP8...
2009 International Conference on Solid State Devices and Materials,Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd Co)
Middle of Line (MOL) metallization with cobalt has been very promising to reduce the parasitic resistance advanced CMOS devices. Though significant line reduction demonstrated, there are still many challenges in MOL integration especially for yield improvement. In this study, via and found be related queue time from CMP dielectric cap deposition. The failure analysis shows erosion causing open resistance. Cobalt is caused by moisture residual fluorine gas FOUP. By using N2 purged FOUP, improved.