- Modular Robots and Swarm Intelligence
- Force Microscopy Techniques and Applications
- Near-Field Optical Microscopy
- Structural Analysis and Optimization
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Materials and Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Innovative Microfluidic and Catalytic Techniques Innovation
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Computational Drug Discovery Methods
Stony Brook University
2024
University of Manitoba
2002-2021
IBM (United States)
2021
University of Winnipeg
2003
We demonstrate, for the first time, Vertical-Transport Nanosheet (VTFET) CMOS logic transistors at sub-45nm gate pitch on bulk silicon wafers. show that VTFETs present an opportunity to break Contacted Gate Pitch (CGP) barrier faced by Lateral-Transport FETs. offer scaling relief electrostatics and parasitics decoupling key device features from CGP-scaling roadblocks. First, nMOS/pMOS VTFET are reported with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this study, we present a concept of morphing structure -- featuring an arch mounted on compliant base that can be reconfigured via snap-through buckling and leverages bistability to retain its morphed shape. We show one-dimensional arrays such units yield beam-like structures that, upon localized snapping, attain multiple, morphologically distinct stable shapes. Units are modeled using discrete elastic rods, reduced-order formulation for beams beam structures, the results validated...
In IC failure analysis, current is often used to indicate the presence of a defective device. By imaging magnetic field produced by flowing in an IC, devices can be located. this paper, we present experimental results on current-carrying lines integrated circuits using MFM. We have experimentally determined that MFM capable measuring currents as small 1 /spl mu/A-10 mu/A ICs. also carried out simulations comparing with results. Using these devised method locate accurately position internal...