A. Rahman

ORCID: 0009-0004-9089-5510
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Modular Robots and Swarm Intelligence
  • Force Microscopy Techniques and Applications
  • Near-Field Optical Microscopy
  • Structural Analysis and Optimization
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Materials and Mechanics
  • Advancements in Semiconductor Devices and Circuit Design
  • Innovative Microfluidic and Catalytic Techniques Innovation
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Computational Drug Discovery Methods

Stony Brook University
2024

University of Manitoba
2002-2021

IBM (United States)
2021

University of Winnipeg
2003

10.1016/j.ijsolstr.2024.112917 article EN International Journal of Solids and Structures 2024-06-05

We demonstrate, for the first time, Vertical-Transport Nanosheet (VTFET) CMOS logic transistors at sub-45nm gate pitch on bulk silicon wafers. show that VTFETs present an opportunity to break Contacted Gate Pitch (CGP) barrier faced by Lateral-Transport FETs. offer scaling relief electrostatics and parasitics decoupling key device features from CGP-scaling roadblocks. First, nMOS/pMOS VTFET are reported with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/iedm19574.2021.9720561 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2021-12-11

In this study, we present a concept of morphing structure -- featuring an arch mounted on compliant base that can be reconfigured via snap-through buckling and leverages bistability to retain its morphed shape. We show one-dimensional arrays such units yield beam-like structures that, upon localized snapping, attain multiple, morphologically distinct stable shapes. Units are modeled using discrete elastic rods, reduced-order formulation for beams beam structures, the results validated...

10.1016/j.ijsolstr.2024.112917 preprint EN arXiv (Cornell University) 2024-03-04

In IC failure analysis, current is often used to indicate the presence of a defective device. By imaging magnetic field produced by flowing in an IC, devices can be located. this paper, we present experimental results on current-carrying lines integrated circuits using MFM. We have experimentally determined that MFM capable measuring currents as small 1 /spl mu/A-10 mu/A ICs. also carried out simulations comparing with results. Using these devised method locate accurately position internal...

10.1109/ccece.2002.1015265 article EN 2003-06-25
Coming Soon ...