A5021708568- Analog and Mixed-Signal Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- 2D Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Magnetic and transport properties of perovskites and related materials
- Low-power high-performance VLSI design
- Chalcogenide Semiconductor Thin Films
- Multiferroics and related materials
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Neuroscience and Neural Engineering
- Advanced Nanomaterials in Catalysis
- Nanowire Synthesis and Applications
- Microwave Dielectric Ceramics Synthesis
- Plasmonic and Surface Plasmon Research
- Ultrasonics and Acoustic Wave Propagation
- Silicon Carbide Semiconductor Technologies
- Rock Mechanics and Modeling
Jiangxi University of Science and Technology
2017-2024
Guangdong University of Technology
2014-2019
Ganzhou People's Hospital
2017
An electromechanical interface plays a pivotal role in determining the performance of stretchable strain sensor. The intrinsic mechanical property elastomer substrate prevents efficient modulation interface, which limits further evolution In this study, chiral auxetic metamaterial (CAM) is incorporated into sensor to override deformation behavior pristine device and regulate performance. tunable isotropic Poisson's ratio (from 0.37 -0.25) achieved by combination CAM endows with significantly...
Abstract In this letter, the vertically‐stacked GaSe/MoS 2 heterostructures with indium tin oxide (ITO) and Ni/Au as contact electrodes are successfully fabricated, respectively. The heterostructure exhibits a broadband photoresponse covering range of visible to near‐infrared spectra at room temperature without external bias voltage. When ITO serves electrodes, high rectification ratio, i.e., 1.5 × 10 4 V DS = ±1 V, an excellent photoelectric performance, responsivity ≈0.67 A W ‐1 , specific...
We report a self-powered photodetector based on the vertical p-MoTe2/n-MoS2 van der Waals heterostructure with indium tin oxide (ITO) electrodes, that exhibits an ultra-fast response of ∼172 μs and high responsivity (R) up to 146 mA W−1 in wavelengths from 450 980 nm. An unique bidirectional photocurrent was observed, varying visible light near infrared light, which could be attributed band alignments type II ITO electrodes. This MoTe2/MoS2 electrodes provides more opportunities for future...
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper models opposite doping (ODCSC) surrounding-gate (SG) JL MOSFET firstly. A model for estimating threshold voltage and drain-induced barrier lowering (DIBL) effect ODCSC SG NMOSFET by solving Poisson's equation under cylindrical coordinates in different regions is presented. The considers source/drain extension region beyond gate edges values radius core channel, doping, shell length, total drain biases...
Phase transformation (bcc-In<sub>2</sub>O<sub>3</sub> to rh-In<sub>2</sub>O<sub>3</sub>) and high Cl<sub>2</sub> sensing performance of Fe doped porous-sheets-like In<sub>2</sub>O<sub>3</sub>.
We have prepared CuO-based structures including Au/CuO/Pt and Au/CuO/Cu/Pt films studied the memristive characteristics of two samples. Current-voltage curves samples suggest that both are typical devices, showing conventional pinched hysteresis loops. Furthermore, presented structure with a seed Cu layer between CuO bottom electrodes Pt demonstrates more better retention than Au/CuO/Pt. In order to explore conducting mechanism for improved properties, electric transport device analyzed...
In article number 1901848 Zhenbei He, Wen Huang, Xiaosheng Zhang and co-workers demonstrate a vertically aligned GaSe/MoS2 heterostructure with Ohmic-contact indium tin oxide (ITO) electrodes. Transparent glass is used as substrate for the device. Therefore, background in cover picture. The self-driven heterojunction photodetector can realize light detection without external power. ITO/GaSe/MoS2/ITO device looks like battery. addition, compared Schottky-contact Ni/Au electrodes, ITO...
The photoelectrocatalytic (PEC) process has attracted much attention in the field of decontamination drinking water and wastewater due to its environmental friendliness considerable efficiency. As a promising class PEC materials, Au/TiO2 been focused by researchers for long time. Nevertheless, it is still difficult synthesize uniform composites without use surface ligands, which may hinder understanding their intrinsic properties. In this work, ligand-free Au/highly ordered TiO2 nanotubes...
As the fourth basic electronic component, application fields of memristive devices are diverse. The digital resistive switching with sudden resistance change is suitable for applications information storage, while analog gradual required in neural system simulation. In this paper, a transparent device ZnO films deposited by magnetron sputtering on indium tin oxides (ITO) glass was firstly prepared and found to show typical behaviors, including an I–V curve that exhibits ‘pinched hysteresis...
Coexistence of non-volatile and volatile resistive switching on the same device are interest in memory devices for weight storage applications. In this work, stacked MoS2 nanosheet thin film was modified using soft nitrogen plasma treatment (NPT). Compared to pristine MoS2-based counterparts, fabricated Ag/NPT-MoS2/indium tin oxide (ITO) structure exhibited both an enhanced ratio 104 lowered threshold voltage 0.1 V. The distinction might be attributed introduced carbonitride between Ag MoS2,...
Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, state, ferroelectric, and current-voltage characteristics of BNMO investigated. results show that the nanocrystalline without LNO layer are monoclinic phase, which have antiferroelectric-like properties. composition state characterized by X-ray photoelectron spectroscopy. In whole electrical...
Since the mine microseismic and blasting signals are non-linear non-stationary, traditional linear analysis methods cannot effectively classify signals. In this study, a method for feature extraction classification of based on CEEMDAN_SE (Complete Ensemble Empirical Mode Decomposition with Adaptive Noise_Sample Entropy) is proposed. Firstly, rock mass vibration decomposed by CEEMDAN. Then five sensitive IMF components IMF4~IMF8 (microseismic) IMF1~IMF5 (blasting) screened out using...
In this study, an off-chip capacitor-less low drop-out regulator (LDO) with improved slew-rate enhancer (ISRE) circuit and a flipped voltage follower (FVF) is presented. The ISRE proposed to enhance the transient response speed of regulator. It uses bandgap reference transistors in series for biasing, which not only increases charge/discharge current but also greatly reduces chip area. Moreover, active feed-forward compensation added FVF loop improve phase margin. FVF-LDO implemented...
It is of great significance to study the characteristics and working mechanism NO<sub>2</sub> sensor material for monitoring air pollution protecting human health. As a metal oxide semiconductor with simple preparation, low cost good long-term stability, In<sub>2</sub>O<sub>3</sub> has been widely studied in detection NO<sub>2</sub>. In order explore influence Fe content on gas sensing properties porous material, Fe-doped nanoparticles are...
Abstract Negative capacitance (NC) devices hold great promise for improving subthreshold slope (SS). However, the theoretical exploration of short-channel effect in NC and two-dimensional (2D) materials remains an ongoing challenge device scaling. The present work demonstrates a double-gate MoS 2 negative field-effect transistor (MoS DG-NCFET) with low power near-zero drain-induced barrier lowering (DIBL) by exploring its design space considering impact various layers, aid developed 2D model...