A5069581108- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Quantum, superfluid, helium dynamics
- Cold Atom Physics and Bose-Einstein Condensates
- Graphene research and applications
- Quantum and electron transport phenomena
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Wireless Power Transfer Systems
- Wireless Body Area Networks
- Energy Harvesting in Wireless Networks
- Quantum Mechanics and Applications
- Radio Frequency Integrated Circuit Design
- Radiation Effects in Electronics
- Cooperative Communication and Network Coding
- Semiconductor Quantum Structures and Devices
- Wireless Communication Networks Research
- Quantum Electrodynamics and Casimir Effect
- Optical properties and cooling technologies in crystalline materials
- Strong Light-Matter Interactions
- Wireless Signal Modulation Classification
- Radar Systems and Signal Processing
- 2D Materials and Applications
Fudan University
2014-2024
State Key Laboratory of ASIC and System
2010-2023
Shanghai Fudan Microelectronics (China)
2004-2011
Huazhong University of Science and Technology
2006
State Key Laboratory of Surface Physics
2004
Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved potential obtained. With model, explicit expressions voltage The analytical results compared with those from simulations excellent agreements observed. useful not only fast circuit simulations, but also device design optimization.
Transistor compact model (TCM) is the key bridge between process technology and circuit design. Typically, TCM desired to capture nonlinear device electronic characteristics their high-order derivatives. However, for novel devices in advanced future technologies, establishing based on analytical equations extracting parameters becomes tedious. The fitting capability outputs' derivatives also limited. These drawbacks hinder fast accurate evaluation cycles. We develop a multigradient neural...
An analytical model for channel potential and subthreshold swing of the symmetric asymmetric double-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Two-dimensional Poisson equation solved analytically using series method obtained. The expression achieved. Model results are compared with Medici simulation results, both them turn out to agree very well. show variation length, gate bias, oxide thickness, which will provide some guidance integrated circuit designs.
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact silicon devices requires a high operation voltage due limited electrical field near the device drain, contradicting low energy purpose. Here, we report vertical swing composed of graphene/silicon heterojunction drain and channel. This structure creates avalanche phenomenon leads steep switching silicon-based device. Experimental measurements reveal small...
Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results verified against simulations good agreements observed. expressions swing, drain induced barrier lowering effect, voltage roll-off characteristics presented. explicit make useful in practical applications device.
This work focuses on the optimization of coupling coefficient (k) inductive link for wireless power transfer (WPT) system to be used in implantable medical devices (IMDs) centimeter size. The analytic expression k is presented. Simulations are conducted by using high-frequency structure simulator (HFSS). Analytic results verified with simulations. receiving (Rx) coil implanted body and set as a circular radius 5 millimeters reducing risk tissue inflammation. under misalignment scenarios...
Based on McKelvey's flux theory, a carrier transport model for graphene field-effect transistor (GFET) is addressed. This leads to an explicit expression drain-to-source current with only few fitting parameters. The verified experiments and simulations, good agreements are observed. With the model, characteristics of GFET positive or negative gate biases can be obtained very quickly easily. will provide some insights guidance practical use GFETs embedded in circuit simulation tools.
A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-semiconductor field-effect transistor (SG MOSFET) is developed. The based on McKelvey's flux theory and includes quantum-mechanical effects. applicable both ballistic- diffusive-transport regimes. results fit with the simulation extremely well in transport regimes small drain biases <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VDS</i> <; 1 V. With model,...
A model for a metal–oxide–semiconductor field-effect-transistor (MOSFET) with surrounding gate (SG) is developed. Analytical solutions to the are obtained by solving Poisson's equation using series expansion. Taking short-channel effects into account, analytical expressions electric potential, field, and threshold voltage obtained. It found that transistor fully depleted small radius, increases as radius or oxide capacitance per unit area decreases.
A model for a metal–oxide–semiconductor field-effect transistor (MOSFET) with double gate (DG) is developed. Quantum mechanical effects on the threshold voltage ( V TH ) are modeled and investigated analytically. The analytic shows how increased quantum effect. applicable to both symmetric DG (SDG) asymmetric (ADG) nMOSFETs, also doped undoped nMOSFETs. results verified by comparing obtained from simulations using Schred, good agreement observed. of an ADG nMOSFET will shift more than that...
A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation solved analytically and channel potential obtained. The analytical expression subthreshold swing achieved. Model results are compared with Medici simulations, good agreement observed. of an SDG MOSFET will be improved by increasing length, reducing either silicon body thickness or gate oxide thickness, doping concentration.
As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into nanometer regime, quantum mechanical effects are becoming more and significant. In this work, a model for surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation solved analytically. Some solutions verified via results obtained from simulations. It found that percentage electrons with lighter conductivity mass increases as silicon body radius decreases, or gate voltage reduces,...
Abstract As the scaling of integrated circuits based on silicon semiconductors becomes increasingly challenging due to minimum feature size being close physical limit, urgent demand for alternative strategies has fuelled rapid growth techniques and material innovations. Here, we report fabrication vertically stacked ambipolar complementary field-effect transistor that is fully composed two-dimensional materials WSe 2 /h-BN/graphene/h-BN/WSe heterostructures. The top bottom FET enables a...
The threshold voltage, Vth of a double-gate (DG) Schottky-barrier (SB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential is obtained by using Gauss's law and solving Poisson's equation, the results which are compared with simulations, good agreement observed. Based on model, new definition developed, an obtained, including quantum mechanical effects SB lowering effect. We find that very sensitive...
In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH) shift of surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We show how VTH is influenced by QM with considerations (110)-silicon (Si) orientation and (100)-Si orientation. Both doped undoped models are presented. The analytical results model compared those obtained Yu et al., good agreement observed. doping level. When radius an SG MOSFET small (<5 nm),...
We investigate analytically the metal–oxide–semiconductor field-effect transistor (MOSFET) with a surrounding gate (SG). develop and present an analytical model for subthreshold swing threshold voltage. Poisson's equation is solved analytically. The expressions electrical potential, drain current in region, swing, voltage are obtained. results compared simulated results, two agree very well. of SG MOSFET can be improved either by reducing silicon body radius or oxide thickness. decreases...
Abstract A carrier transport model for graphene nanoribbon field-effect transistors (GNR FETs) is obtained using McKelvey’s flux and quasi-ballistic theories. Source/drain series resistances are taken into account. With the model, an analytical expression drain-to-source current achieved including only three fitting parameters. The verified by simulation, good agreements observed. characteristics of GNR FETs with different drain or gate biases can be very swiftly, saving much simulation...
Si-based cold source field-effect transistor (CSFET) combines the benefits of sub-60-mV/dec steep-slope switching, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> current, and compatibility with current Si CMOS process technology. Therefore, it is a promising candidate for future energy-efficient logic For first time, we present...
We investigate analytically the metal–oxide–semiconductor field-effect transistor (MOSFET) with a surrounding gate (SG). develop and present an analytical model for subthreshold swing threshold voltage. Poisson's equation is solved analytically. The expressions electrical potential, drain current in region, swing, voltage are obtained. results compared simulated results, two agree very well. of SG MOSFET can be improved either by reducing silicon body radius or oxide thickness. decreases...