A5079702588- Magnetic properties of thin films
- Magneto-Optical Properties and Applications
- Advanced Memory and Neural Computing
- Magnetic Properties and Applications
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- Physics of Superconductivity and Magnetism
- ZnO doping and properties
- Graphene research and applications
- Heusler alloys: electronic and magnetic properties
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Topological Materials and Phenomena
- Advanced Condensed Matter Physics
- Magnetic Properties of Alloys
- Magnetic Properties and Synthesis of Ferrites
- Phase-change materials and chalcogenides
- Metallic Glasses and Amorphous Alloys
- Characterization and Applications of Magnetic Nanoparticles
- Electrical and Thermal Properties of Materials
- Multiferroics and related materials
- Anodic Oxide Films and Nanostructures
- Thermal properties of materials
- Semiconductor materials and devices
- Copper Interconnects and Reliability
Nanjing University
2017-2025
University of York
2014-2023
Collaborative Innovation Center of Advanced Microstructures
2017-2022
National Laboratory of Solid State Microstructures
2020-2022
Shanghai Advanced Research Institute
2022
Chinese Academy of Sciences
2022
Southeast University
2022
Chuzhou University
2021
Guangdong University of Petrochemical Technology
2021
Institute of Physics
2021
Abstract Altermagnetism, a newly identified class of magnetism blending characteristics both ferromagnetism and antiferromagnetism, is emerging as compelling frontier in spintronics. This study reports groundbreaking discovery robust, 100% field‐free spin‐orbit torque (SOT) switching RuO 2 (101)/[Co/Pt] /Ta structure. The experimental results reveal that the spin currents, induced by in‐plane charge current, flow along [100] axis, with polarization direction aligned parallel to Néel vector....
Fe/GaAs is a prototype system of spin injection at room temperature. The interfacial strain and oriented bonds are both considered the origin Fe in-plane uniaxial magnetic anisotropy (UMA), which remains decisive. Here, by x-ray circular dichroism (XMCD) vibrating sample magnetometer measurements, this study shows that in Fe/Cr(t)/GaAs structure, UMA originates from chemical bonding between GaAs substrate varying Cr thickness, t. drops as coverage increases, characterized decrease saturation...
The relationship between the bipolar resistive switching and polarization reversal is investigated at various temperatures in Au/BiFeO3/SrRuO3 structure. It found that polarization-induced barrier variation Au/BiFeO3 BiFeO3/SrRuO3 junctions decreases with decreasing temperature. This explains why resistance-switching ratio temperature below 323 K gives evidence modulates resistance state of Besides, oxygen vacancies migration and/or carrier trapping/detrapping mechanisms are also suggested...
Two-dimensional (2D) van der Waals ferromagnetic materials have attracted intense attention due to their potential impact on both fundamental and applied research studies. Recently, a new 2D ferromagnet CrTe2, prepared by mechanical exfoliation or chemical vapor deposition, has gained interest its novel magnetic properties. In this work, high quality CrTe2 epitaxial thin films were GaAs (111)B substrates using solid source molecular beam epitaxy, with the thickness varying from 35 4...
Abstract The magnetic type-II Weyl semimetal (MWSM) Co 3 Sn 2 S has recently been found to host a variety of remarkable phenomena including surface Fermi-arcs, giant anomalous Hall effect, and negative flat band magnetism. However, the dynamic properties remain relatively unexplored. Here, we investigate ultrafast spin dynamics crystal using time-resolved magneto-optical Kerr effect reflectivity spectroscopies. We observe transient magnetization behavior, consisting spin-flipping dominated...
We have demonstrated a robust magnetic tunnel junction (MTJ) with resistance-area product RA=8 Ω—μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR ≫ 15σ(R <inf xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> ), write threshold spread σ(Vw)/≪Vw≫ ≪7.1%, breakdown-to-write voltage margin over 0.5V, read-induced disturbance rate below 10...
Laser-induced spin dynamics of in-plane magnetized CoFeB films has been studied by using time-resolved magneto-optical Kerr effect measurements. While the effective demagnetization field shows little dependence on pump laser fluence, intrinsic damping constant found to be increased from 0.008 0.076 with increase in fluence 2 mJ/cm2 20 mJ/cm2. This sharp enhancement shown transient and ascribed heating induced excitation, as is almost unchanged when pump-probe measurements are performed at a...
We have studied the Co2FeAl thin films with different thicknesses epitaxially grown on GaAs (001) by molecular beam epitaxy. The magnetic properties and spin polarization of were investigated in-situ magneto-optic Kerr effect (MOKE) measurement spin-resolved angle-resolved photoemission spectroscopy (spin-ARPES) at 300 K, respectively. High 58% (±7%) was observed for film thickness 21 unit cells (uc), first time. However, when decreases to 2.5 uc, falls 29% (±2%) only. This change is also...
Abstract The magnetic bimeron, as the in-plane counterpart of skyrmion, has potential applications in next-generation spin memory devices due to its lower energy consumption. In this work, dynamic behavior a current-driven bimeron nanotrack with voltage-controlled anisotropy (VCMA) is investigated. By adjusting profile VCMA, can display diode-like unidirectional nanotrack. be modulated by changing driven current density and width VCMA region. trajectory also controlled periodic region, which...
Synthetic antiferromagnetics (SAF) provide an excellent platform for antiferromagnetic spintronics. Recently, the voltage-control of Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in SAFs was studied experimentally. Optical control would offer unique opportunities ultrafast manipulation spin states, however, it has yet to be demonstrated. Here, using femtosecond laser excitations a [Co/Pt]-based perpendicular magnetic anisotropy (PMA) synthetic antiferromagnet (p-SAF), we drive reduction...
Abstract The dynamic response of magnetic order to optical excitation at sub‐picosecond scale has offered an intriguing alternative for magnetism manipulation. Such ultrafast manipulation become a fundamental challenging topic with high implications future spintronics. Here, this study demonstrates such in Co 2 FeSi films grown on flexible polyimide substrate, and how the magneto‐optical interaction can be modified by using strain engineering which turn triggers both dipolar exchange spin...
Spin–orbit torque (SOT)-induced magnetization switching in ferrimagnetic materials is promising for application a new generation of information storage devices. Here, we demonstrate SOT-induced field-free the perpendicularly magnetized CoTb ferrimagnet layer IrMn/CoTb bilayer, which in-plane magnetic inversion symmetry broken by spontaneous exchange bias (IEB) established isothermal crystallization IrMn layer. We obtain significant SOT effective field acting on and large spin Hall angle this...
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of key issues is control domain configuration. Here, we study structure and switching in Permalloy (Fe20Ni80) nanoscale junctions with different thicknesses by using micromagnetic simulations. It found that both 90-degree 45-degree walls can be formed between wire arms depending on thickness device. The fields show distinct dependencies broad peak...
Using the time-resolved magneto-optical Kerr effect method, helicity-dependent all-optical magnetization switching (HD-AOS) is observed in ferrimagnetic TbFeCo films. Our results reveal individual roles of thermal and nonthermal effects after a single circularly polarized laser pulse. The evolution this ultrafast occurs over different time scales, defined reversal 460 fs shown—the fastest ever observed. Micromagnetic simulations based on macro-spin model, taking into account both heating...
While conventional microelectronic integrated circuits based on electron charges approach the theoretical limitations in foreseeable future, next-generation nonvolatile logic units spins have potential to build networks of low power consumption. Central this spin-based architecture is development a paradigm for in-memory computing with magnetic units. Here, we demonstrate basic function transistor unit patterned Y-shaped NiFe nanowires by gate-controlled domain-wall pinning and depinning....
Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing critical SOT switching current density improving efficiency are crucial, especially perpendicularly magnetized structures. Here, we have conducted a comprehensive study on Ta/CoFeB structure with perpendicular magnetic anisotropy by inserting oxide insulating layer Fe2O3 bottom...
Graphene-based spintronics has attracted great interest while the spin transport and relaxation in clean graphene at low temperatures are still unrevealed. Here, we present an all-dry van der Waals transfer technique to fabricate contamination-free single-layer based lateral valve devices. We have obtained a non-local resistance as large 125 Ω lifetime of up 2.47 ns room temperature simultaneously. Strikingly, unexpected dependence been observed, where τ diffusion length λ decrease with...
Abstract Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial high‐density storage and memory devices, remains nondeterministic inefficient. Here, a highly efficient approach demonstrated to generate collinear spin currents by artificial modulation interfacial symmetry, achieving 100% current‐induced field‐free SOT switching CoFeB multilayers with on stepped Al 2...
Here, we have investigated the spin pumping effect of Y3Fe5O12 (YIG)/Cu (tCu nm)/Cr heterostructures at room temperature with thickness Cu interlayer varying from 0.4 nm to 5.0 nm. A huge charge signal Ic = 0.239 μA is observed in a YIG/Cr bilayer direct contact, whereas drops dramatically by two orders magnitude when thin interlayers down are inserted between YIG and Cr. Meanwhile, injected current Js stays almost invariant for all heterostructures. The effective Hall angle “θSH” interface...
Here, the spin-torque ferromagnetic resonance signal and spin Hall magnetoresistance induced by effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (tCu) have been systemically studied. The effective mixing conductance geff↑↓, interfacial transparency T, real spin–orbit torque efficiency (JsJc)real show a significant increase compared to W/CoFeB heterostructure. reaches its maximum ∼0.54, increased up ∼50% at optimized tCu ∼ 0.52 nm according our theoretical prediction....
Among the layered two-dimensional ferromagnetic materials (2D FMs), due to a relatively high T C , van der Waals (vdW) Fe 3 GeTe 2 (FGT) crystal is of great importance for investigating its distinct magnetic properties. Here, we have carried out static and dynamic magnetization measurements FGT with Curie temperature ≈ 204 K. The M – H hysteresis loops in-plane out-of-plane orientations show that has strong perpendicular anisotropy easy axis along c -axis. Moreover, calculated uniaxial...
We obtained epitaxial single-crystal Fe3O4(001)/MgO(001) thin films by magnetron sputtering. The high quality of the grown Fe3O4 was confirmed reflection high-energy electron diffraction and x-ray photoelectron spectroscopy. Atomic magnetic properties were investigated using vibrating sample magnetometry circular dichroism. values saturation magnetization moment are 407 ± 5 emu/cm3 (3.26 0.04 μB/(f.u.)) 3.31 0.15 μB/(f.u.), respectively, in film as nm, which close to bulk values. spin...