A5102755967- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Quantum and electron transport phenomena
- Quantum Dots Synthesis And Properties
- Acoustic Wave Resonator Technologies
- 2D Materials and Applications
- Semiconductor materials and devices
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Copper-based nanomaterials and applications
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Semiconductor Lasers and Optical Devices
- Metal and Thin Film Mechanics
- Graphene research and applications
- Nanowire Synthesis and Applications
Henan Normal University
2007-2024
Xinxiang Medical University
2017
Henan Institute of Science and Technology
2017
Zhengzhou University
2011-2013
Within the framework of effective-mass approximation, we have calculated binding energy a hydrogenic donor impurity in zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using variational procedure. It is found that highly dependent on position and QD size. The Eb largest when located at center QD. decreased height (radius) increased.
Within the framework of effective-mass approximation, barrier width dependence donor binding energy hydrogenic impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot (QD) is calculated by means variational procedure, considering strong built-in electric field effect due to spontaneous and piezoelectric polarizations. Numerical results show that located at any growth direction position are obviously dependent on WZ In0.1Ga0.9N/GaN QD with small (<8 nm). However,...
Within the framework of effective-mass approximation, donor impurity states in wurtzite (WZ) InGaN staggered quantum wells (QWs) are investigated theoretically. Numerical results show that binding energy becomes insensitive to variation In composition y WZ In0.2Ga0.8N/InyGa1−yN QWs when > 0.125 and for any position. Moreover, located at right edge InyGa1−yN well layer, has a minimum it is also insensible width L 3 nm.