A5058709261- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Photorefractive and Nonlinear Optics
- Mechanical and Optical Resonators
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Nonlinear Photonic Systems
- Photonic Crystals and Applications
- Quantum Information and Cryptography
- Quantum optics and atomic interactions
- Molecular Junctions and Nanostructures
- GaN-based semiconductor devices and materials
- Thermal Radiation and Cooling Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Laser-Matter Interactions and Applications
- Advanced MEMS and NEMS Technologies
- Geophysics and Sensor Technology
Coherent (United States)
2024
IBM Research - Zurich
2017-2023
Abstract Early works 1 and recent advances in thin-film lithium niobate (LiNbO 3 ) on insulator have enabled low-loss photonic integrated circuits 2,3 , modulators with improved half-wave voltage 4,5 electro-optic frequency combs 6 on-chip devices, applications ranging from microwave photonics to microwave-to-optical quantum interfaces 7 . Although demonstrated tunable lasers based LiNbO (refs. 8,9 ), the full potential of this platform demonstrate frequency-agile, narrow-linewidth has not...
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence fully integrated LiNbO3 electro-optic devices. Yet date, photonic circuits mostly been fabricated using non-standard etching techniques partially etched waveguides, that lack reproducibility achieved silicon photonics. Widespread application requires a reliable solution with precise lithographic control. Here we demonstrate heterogeneously platform employing wafer-scale...
Abstract Electrically actuated optomechanical resonators provide a route to quantum-coherent, bidirectional conversion of microwave and optical photons. Such devices could enable interconnection quantum computers based on qubits operating at frequencies. Here we present platform for microwave-to-optical comprising photonic crystal cavity made single-crystal, piezoelectric gallium phosphide integrated pre-fabricated niobium circuits an intrinsic silicon substrate. The exploit spatially...
This paper reports the first demonstration of lithographic aperture VCSELs with bandwidth above 29 GHz. Large-signal measurements and preliminary lifetime data are reported, putting forward as an enabling technology for applications beyond 100G.
We present efficient evanescent coupling of single organic molecules to a gallium phosphide (GaP) subwavelength waveguide (nanoguide) decorated with microelectrodes. By monitoring their Stark shifts, we reveal that the coupled experience fluctuating electric fields. analyze spectral dynamics different over large range optical powers in nanoguide show these fluctuations are light-induced and local. A simple model is developed explain our observations based on activation charges at an...
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 μm) and wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes low two-photon absorption at telecommunication wavelengths. Heating due strongly confined light fields is therefore greatly reduced. Here, we investigate the benefits these properties cavity optomechanics. Utilizing recently developed fabrication scheme based on direct wafer bonding,...
We demonstrate a hybrid LiNbO 3 -Si N 4 photonic integrated platform with propagation loss of 8.5 dB/m at wafer scale. The low insertion (4 dB) and precise lithographic control. also number applications the platform.
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum (Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P). Utilizing mixtures silicon tetrachloride (SiCl$_4$) sulfur hexafluoride (SF$_6$), selectivities exceeding 2700:1 are achieved at GaP rates above 3000 nm/min. A design experiments has been employed to investigate influence power, chamber pressure, DC...
We present a LiNbO 3 integrated photonic platform with wafer-scale bonding to Si N 4 circuit. The exhibits < 0.1 dB/cm propagation loss and 2.5 dB/facet fiber-chip coupling loss. demonstrate phase shifters, frequency-agile lasers, optical splitters, other devices.
We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10 −18m2/W) yields 10-mW parametric threshold and 100-nm-wide with THz spacing, centered at 1550
We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (~10−17 m2/W) yields THz at 1550 nm with 3-mW power threshold and >100-nm bandwidth.
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, frequency combs, microwave-optical transducers. Yet date, photonic circuits (PICs) mostly been fabricated using non-standard etching techniques that lack reproducibility routinely achieved silicon photonics. Widespread future application requires a reliable scalable solution standard...
We present the first investigation of optomechanics in an integrated one-dimensional gallium phosphide (GaP) photonic crystal cavity. The devices are fabricated with a newly developed process flow for integration GaP on silicon dioxide (SiO<sub>2</sub>) involving direct wafer bonding epitaxial GaP/Al<sub>x</sub>Ga<sub>1-x</sub>P/GaP heterostructure onto oxidized wafer. Device designs transferred into top layer by inductively-coupled-plasma reactive ion etching and made freestanding removal...
We demonstrate the integration of a Si 3 N 4 Damascene photonic platform with thin-film lithium niobate on insulator (LNOI) via direct wafer bonding. This process enables fabrication hybrid X(2) -X (3) microresonators Q " 10 6 , as well integrated travelling wave EO modulators.
We present a complete process flow for fabrication of integrated GaP-on-insulator photonic devices via direct wafer bonding epitaxial films. High-fidelity patterning enables range applications, such as waveguide resonators and crystal cavities.
We demonstrate an electro-optically tunable hybrid integrated laser self-injection locked to a mode of heterogeneously lithium-niobate-on-Damascene-silicon-nitride microresonator. An intrinsic linewidth 3 kHz and frequency tuning rate 12 × 10 15 Hz/s were observed. Proof-of-principle coherent LiDAR experiments performed.
We demonstrate an electro-optically tunable hybrid integrated laser self-injection locked to a mode of heterogeneously lithium-niobate-on-Damascene-silicon-nitride microresonator. An intrinsic linewidth 3 kHz and frequency tuning rate 12 × 10 15 Hz/s were observed. Proof-of-principle coherent LiDAR experiments performed.
We demonstrate an electro-optically tunable hybrid integrated laser self-injection locked to a mode of heterogeneously lithium-niobate-on-Damascene-silicon-nitride microresonator. An intrinsic linewidth 3 kHz and frequency tuning rate 12 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> Hz/s were observed. Proof-of-principle coherent LiDAR experiments performed. © 2022 The Author(s)
Gallium phosphide is an attractive material for non-linear optics because of its broad transparency window (E_b = 2.26 eV) and large Kerr coefficient (n_2 6*10^-18 m^2/W). Though well-established in the semiconductor industry as a substrate visible LEDs, use chip-scale photonics remains limited due to fabrication challenges. Here we demonstrate unprecedentedly low loss (Q > 10^5) GaP-on-SiO2 waveguide resonators which have been dispersion-engineered support frequency comb generation C-band....
We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10−18 m2/W) yields 10-mW parametric threshold and 100-nm-wide with THz spacing, centered at 1550
Gallium phosphide (GaP) is an attractive material for non-linear optics because of its broad transparency window (λ_vac > 548 nm) and large Kerr coefficient (n_2 ~ 6 × 10^-18 m^2/W). Though well-established in the semiconductor industry as a substrate visible LEDs, use integrated photonics remains limited due to fabrication challenges. Recently we have developed method integrate high quality, epitaxially-grown GaP onto silica (SiO2) based on direct wafer bonding oxidized silicon carrier...
We demonstrate hybrid integration of gallium phosphide photonic crystal cavities with superconducting Nb circuits using direct wafer bonding. Quality factors Q o = 1.4 • 10 5 are achieved for optical in close proximity to the electrodes.