A5011934270- 2D Materials and Applications
- Magnetic and transport properties of perovskites and related materials
- Magnetic properties of thin films
- Graphene research and applications
- Multiferroics and related materials
- Quantum and electron transport phenomena
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- ZnO doping and properties
- Carbon Nanotubes in Composites
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Ferroelectric and Piezoelectric Materials
- Antibiotic Resistance in Bacteria
- Terahertz technology and applications
- Ion-surface interactions and analysis
- Organic Light-Emitting Diodes Research
- Thermal Radiation and Cooling Technologies
- Plasmonic and Surface Plasmon Research
- Thermal properties of materials
- Non-Destructive Testing Techniques
- Diamond and Carbon-based Materials Research
- Bacterial Genetics and Biotechnology
- Chemical and Physical Properties of Materials
- Magneto-Optical Properties and Applications
University of Nottingham
2020-2024
Northwest A&F University
2024
University of Cambridge
2013-2022
CIC nanoGUNE
2016-2020
University of Oxford
1997-2010
The integration of the spin degree freedom in charge-based electronic devices has revolutionised both sensing and memory capability microelectronics. Further development spintronic requires electrical manipulation current for logic operations. approach followed so far, inspired by seminal proposal Datta Das modulator, relied on spin-orbit field as a medium control state. However, still standing challenge is to find material whose spin-orbit-coupling (SOC) weak enough transport spins over...
Long distance spin transport and photoresponse are demonstrated in a single F16CuPc valve. By introducing low-temperature strategy for controlling the morphology of organic layer during fabrication molecular valve, large spin-diffusion length up to 180 nm is achieved at room temperature. Magnetoresistive photoresponsive signals simultaneously observed even an air atmosphere.
We study spin Hall magnetoresistance (SMR) and magnon transport (MST) in $\mathrm{Pt}/{\mathrm{Y}}_{3}\mathrm{F}{\mathrm{e}}_{5}{\mathrm{O}}_{12}(\mathrm{YIG})$-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of YIG film results a slight enhancement spin-mixing conductance an extraordinary increase efficiency spin-to-magnon conversion at room temperature. The develops magnetic frustration low temperatures, causing sign change SMR...
High-resolution magnetoelectric imaging is used to demonstrate electrical control of the perpendicular local magnetization associated with 125 nm-wide magnetic stripe domains in 100-nm-thick Ni films. This coupling achieved zero field using strain from ferroelectric BaTiO3 substrates anisotropy imposed by growth stress. These findings may be exploited for recording nanopatterned hybrid media.
Abstract Spintronic device is the fundamental platform for spin-related academic and practical studies. However, conventional techniques with energetic deposition or boorish transfer of ferromagnetic metal inevitably introduce uncontrollable damage undesired contamination in various spin-transport-channel materials, leading to partially attenuated widely distributed spintronic performances. These issues will eventually confuse conclusions studies limit applications spintronics. Here we...
We report a spin valve with few-layer graphene flake bridging highly spin-polarized La_{0.67}Sr_{0.33}MnO_{3} electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy x-ray circular dichroism contrast. A naturally occurring high interfacial resistance ∼12 MΩ facilitates injection, and large resistive (0.8 at 10 K) implies 70-130 μm diffusion length that exceeds previous values obtained...
Abstract The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An class ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential nano-ferroelectrics. Here, we report semiconductor junctions (FSJs) in which the vdW α -In 2 Se 3 embedded between two single-layer graphene electrodes. In these two-terminal devices, polarization...
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration, or proximity with a van der Waals material. As it is expected that such enhancement gives rise to sizable spin Hall effect, spin-to-charge current conversion phenomenon of technological relevance, has sparked wide research interest. However, only been measured graphene/transition-metal dichalcogenide heterostructures limited scalability. Here, we experimentally demonstrate the effect up room...
Electrical generation and detection of pure spin currents without the need magnetic materials are key elements for realization full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge conversion signal is crucial, since considerable outputs needed plausible applications. Unfortunately, values obtained so far have been rather low. Here we exploit Hall effect by using Pt, non-magnetic metal with strong spin-orbit coupling, to generate detect in...
Electron paramagnetic resonance of single-walled carbon nanotubes (SWCNTs) has been bedevilled by the presence impurities. To address this, SWCNTs produced laser ablation with a nonmagnetic PtRhRe catalyst were purified through multiple step centrifugation process in order to remove amorphous and Centrifugation SWCNT solution resulted sedimentation nanotube bundles containing clusters particles, while isolated reduced particle content remained supernatant. Further ultracentrifugation highly...
Nanoelectronic field effect transistors (FETs) are produced using solution processed individual carbon nanotubes (CNTs), synthesized by both arc discharge and laser ablation methods. We show that the performance of FETs approaches CVD-grown if have minimal lattice defects free from surface contamination. This is achieved treating to a high-temperature vacuum annealing process 1,2-dichloroethane for dispersion. present CNT with mobilities up 3546 cm2/(V s), transconductance 4.22 μS, on-state...
Abstract Ferroelectricity at the nanometre scale can drive miniaturisation and wide application of ferroelectric devices for memory sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP 2 S 6 (CIPS) has attracted much attention due to its robust ferroelectricity found in thin layers room temperature. Also, unlike many 2D ferroelectrics, CIPS is a band gap semiconductor, well suited use as gate field-effect transistors (FETs). Here, we report on hybrid FET...
Abstract The interplay between the strong intralayer covalent‐ionic bonds and weak interlayer van der Waals (vdW) forces neighboring layers of vdW crystals gives rise to unique physical chemical properties. Here, bondings in α β polytypes In 2 Se 3 are studied, a material with potential applications advanced electronic optical devices. Picosecond ultrasonic experiments conducted probe sound velocity direction perpendicular layers. measured velocities different α‐ β‐In , suggesting...
Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain classical and quantum phenomena in unexplored picosecond temporal nanometer spatial regimes. This intriguing approach requires use coherent GHz sub-THz 2D phonons. Here, we report on nanostructures that combine thick vdW layers nanogratings. Using an ultrafast pump–probe technique, generate detect in-plane...
Applications in spintronics require sources of spin-polarized current that exhibit sharp magnetization reversal, but real electrodes do not always comply---an unmentioned elephant the scientific room. The authors use magnetic anisotropy to tune a popular oxide system from gradual switching, their quantitative analysis allowing device output be evaluated under these two scenarios. implications switching mechanism for performance are shown dramatic, and by ``naming shaming elephant'' this work...
Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy the same temperature reveals that magnetoresistance arises from in-plane reorientations electrode magnetization, evidencing tunnelling anisotropic La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through non-magnetic channel could be attractive for graphene-based...
We investigate magnetization-reversal processes in half-metallic epitaxial films of ${\mathrm{La}}_{0.67}{\mathrm{Sr}}_{0.33}{\mathrm{Mn}\mathrm{O}}_{3}$ on ${\mathrm{Sr}\mathrm{Ti}\mathrm{O}}_{3}$ (110) substrates. At 150 K, major-loop magnetization reversal (MLMR) occurs beyond minor-loop switching fields, implying that MLMR is limited by domain nucleation. 280 overlaps with fields if there are deliberately introduced precipitates, the precipitates limit pinning walls. To confirm pin walls...
Electrical control of magnetism has been demonstrated in multiferroic compounds and ferromagnetic semiconductors, but electrical switching a substantial net magnetization at room temperature not these materials. This goal instead achieved heterostructures comprising films which electrically driven magnetic changes arise due to strain or exchange bias from ferroic substrates, charge effects induced by gate. However, previous work focused on an in-plane involved the assistance applied fields....
In the strong wind environment, strain tower jumper will rotate due to swing, resulting in a decrease gap between and tower. this paper, coupled finite element model is established simulate 500 kV insulator string-jumper-cage skeleton system, aiming explore influence of string length attack angle on deflection suspension insulator. At same time, considering fluctuating conditions with an average speed 35 m/s, yaw rotation characteristics are analyzed. The results show that case jumper,...
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