A5071142970- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Sensor and Energy Harvesting Materials
- Immune Cell Function and Interaction
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Hippo pathway signaling and YAP/TAZ
- Perovskite Materials and Applications
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Graphene research and applications
- Phagocytosis and Immune Regulation
- T-cell and B-cell Immunology
- Nanowire Synthesis and Applications
- Neural dynamics and brain function
- Cancer-related gene regulation
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Immunotherapy and Immune Responses
- Multiferroics and related materials
University of Hong Kong
2025
Zhuhai People's Hospital
2024
Jinan University
2023-2024
Collaborative Innovation Center of Advanced Microstructures
2020-2023
Nanjing University
2020-2023
Abstract The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer crystal, ferroelectric HfZrO x gating van der Waals fabrication, we realize OTFTs that simultaneously deliver transconductance sub-60 mV/dec switching, under one-volt operating voltage. overall optimization transconductance, subthreshold swing output resistance leads to transistor intrinsic amplifier...
Abstract Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed etc, at same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, micro-LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based...
Abstract Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks asymmety-induced spontaneous polarization. Here, we report crucial breakthrough in boosting 3R-MoS 2 by adopting edge contact (EC) geometry using bismuth semimetal electrode. In clear contrast to typically used top (TC) geometry, EC metal which...
Abstract Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as ultrahigh mobility and strong light–matter interaction at atomic thickness) a broad range of potential applications (especially in fields electronics optoelectronics). The growth single-crystal 2D is prerequisite realize 2D-based high-performance applications. In this review, we aim provide an in-depth analysis state-of-the-art...
Abstract The ability to emulate multiplexed neurochemical transmission is an important step toward mimicking complex brain activities. Glutamate and dopamine are neurotransmitters that regulate thinking impulse signals independently or synergistically. However, emulation of such simultaneous neurotransmission still challenging. Here we report design fabrication synaptic transistor emulates glutamate dopamine. device can perform glutamate-induced long-term potentiation, dopamine-induced...
2D semiconductors are considered to be one of the most promising channel materials extend transistor scaling. However, integration ultra-thin dielectrics on has been challenging, and reliability not investigated date. Here, using monolayer 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT low 1.7 nm large-area CVD MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . The ultrathin high-κ...
Rationale: TOX is a DNA-binding factor required for the development of multiple immune cells and formation lymph nodes. However, temporal regulation mode on NK cell function needs to be further explored. Methods: To investigate role in at distinct developmental phases, we deleted hematopoietic stem stage (Vav-Cre), precursor (CD122-Cre) late (Ncr1-Cre), respectively. Flow cytometry was used detect functional changes when deletion TOX. RNA-seq assess differences transcriptional expression...
Using low-temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu$</tex> -LED displays driven by large-area CVD MoS <inf xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin-film transistors (TFTs). The exhibit maximum and median mobility 73 54 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup>...
Abstract Natural killer (NK) cells play a crucial role in immune response against viral infections and tumors. However, further investigation is needed to better understand the key molecules responsible for determining fate function of NK cells. In this study, we made an important discovery regarding involvement Hippo kinases Mst1 Mst2 as novel regulators maintaining mouse cell homeostasis. The presence high (Mst1/2) activity essential their proper development, survival canonical signaling...
Abstract The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics applications. Here, by combining solution-processed monolayer crystal, ferroelectric HfZrO x gating van der Waals device fabrication, we realize OTFTs that simultaneously deliver transconductance sub-60mV/dec switching, under one-volt operating voltage. overall optimization transconductance, subthreshold swing output resistance leads to transistor...
Abstract The growing computational demand in artificial intelligence (AI) calls for hardware solutions that are capable of in-situ machine learning, where both training and inference performed by edge computation. This not only requires extremely energy-efficient architecture (such as in-memory computing, IMC) but also memory with tunable properties to simultaneously meet the inference. Here, we report a duplex device structure based on ferroelectric field-effect transistor (FeFET)...
Due to the absence of dangling bonds, integration ultra-thin dielectric on 2D semiconductors has become a huge challenge, and its reliability research been blank before. For first time, we report high -K Mos <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . By PTCDA crystal as interface layer, demonstrated excellent HfO /PTCDA gate stack, including EBD over 8.9 MV/cm, <sup xmlns:xlink="http://www.w3.org/1999/xlink">10yrs</sup> 6.5 MV/cm...