A5047805251- 2D Materials and Applications
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advanced Sensor and Energy Harvesting Materials
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Nanowire Synthesis and Applications
- Quantum-Dot Cellular Automata
- Perovskite Materials and Applications
- earthquake and tectonic studies
- Ga2O3 and related materials
- High-pressure geophysics and materials
- Geological and Geochemical Analysis
Collaborative Innovation Center of Advanced Microstructures
2021-2023
Nanjing University
2021-2023
Yunnan University
2023
We fabricated high-performance MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FETs featuring large-area CVD channel, self-aligned top-gate, and semi-metallic Bi Ohmic contact. For the first time, was used in top-gate 2D FET as source/drain contacts to achieve zero Schottky barrier reduce contact resistance ( <tex xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\mathrm{C}}$</tex> ). The devices showed...
Two-dimensional transition metal dichalcogenides (2D TMDs) are expected to enable extremely scaled logic transistors for their ultrathin body and superior electrostatic control, i.e. gate length scaling. Aggressive scaling requires also contact Here we demonstrate with low resistance of sub-100 Ω-μm (best data in TLM) through optimized surface preparation semimetal/metal stack. Monolayer-MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We presented a compact model for transition metal dichalcogenide (TMD) field effect transistors (FETs) by considering the indispensable effects of interface traps. By simplifying energy distribution traps, large amount numerical calculations in previously published models can be avoided. At same time, our provides good fit to experimental results. The proposed converging and accurate is suitable efficient circuit explorations future complex systems based on TMD FETs.
The Kaimuqi area in the Eastern Kunlun Orogen (EKO) contains many lherzolite, olivine websterite, gabbro and diorite intrusions, new zircon U–Pb dating, Lu–Hf isotope whole-rock geochemical data are presented herein to further confirm Late Triassic mafic–ultramafic magmatism with Cu–Ni mineralization discuss petrogenesis geodynamic setting. Zircon dating shows that ages, corresponding 220 Ma 222 Ma, reveal dioritic Kaimuqi, respectively. from has εHf(t) values of −3.4 −0.2, TDM1 ages 994–863...