A5100354918- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- CCD and CMOS Imaging Sensors
- Ferroelectric and Negative Capacitance Devices
- Advanced Image and Video Retrieval Techniques
- Advanced Data Storage Technologies
- Advanced Vision and Imaging
- VLSI and Analog Circuit Testing
- Advanced Neural Network Applications
- Image Processing Techniques and Applications
- Low-power high-performance VLSI design
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- Carbon Nanotubes in Composites
- Neuroscience and Neural Engineering
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Electronic and Structural Properties of Oxides
- Video Coding and Compression Technologies
- Cellular Automata and Applications
- Advancements in PLL and VCO Technologies
Chungbuk National University
2020-2025
Korea Advanced Institute of Science and Technology
2012-2023
Dongguk University
2022
SK Group (South Korea)
2022
Kyung Hee University
2010-2021
Soonchunhyang University
2015-2020
Sejong University
2014-2020
The Korean Society for School Science
2017
Kia Motors (South Korea)
2013
The University of Texas at Austin
2011-2012
A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use wet etching. The driving current increased by 5-fold due to inherent stacked five-level nanowires, thus showing good feasibility three-dimensional integration-based high performance transistor. developed fabrication process, which simple and reproducible, used create stiction-free uniformly sized aid one-route...
Deep Learning algorithm is widely used for various pattern recognition applications such as text recognition, object and action because of its best-in-class accuracy compared to hand-crafted shallow learning based algorithms. Long time caused by complex structure, however, limits usage only in high-cost servers or many-core GPU platforms so far. On the other hand, demand on customized within personal devices will grow gradually more deep be developed. This paper presents a SoC implementation...
Abstract We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has hydroscopic property hence it can be in water. In terms physical security devices, prompt abrogation which stored large number data is crucial when stolen because all things have identified information device. By utilizing paper as substrate, we fabricated disposable resistive random access (RRAM) good retention longer than 10 6 seconds and cycling endurance...
Triple-level-cell (TLC) NAND has prevailed the non-volatile memory market, yet quad-level-cell (QLC) is emerging as a suitable replacement for low-cost and high-density storage. However, despite its cost effectiveness QLC's market share not increasing quickly, only due to worse reliability but also slow sequential random read performance. To increase performance an independent plane operation been introduced [1], [2], pass voltage noise, caused by high I/O data-path current consumption,...
A physical unclonable function (PUF) device using a nano-electromechanical (NEM) switch was demonstrated. The most important feature of the NEM-switch-based PUF is its use stiction. Stiction one chronic problems associated with micro- and system (MEMS/NEMS) devices; however, here, it utilized to intentionally implement for hardware-based security. stiction caused by capillary van der Waals forces, producing strong adhesion, which can be design highly robust stable PUF. probability that will...
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked silicon nanowire (SiNW) channels are investigated. Direct observations using thermal images, electrical proof measurements, and supportive numerical simulations carried out to verify the SHEs. This paper examines location of hot spots as well heat dissipation paths (heat sink) depending on device geometry, degradation produced by It also includes estimation surface temperature GAA MOSFET average across...
Device degradation induced by hot-carrier injection was repaired electrical annealing using Joule heat through a built-in heater in gate. The concentrated high temperature anneals the gate oxide locally and degraded device parameters are recovered or further enhanced within short time of 1 ms. Selecting proper range repair voltage is very important to maximize effects minimize extra damages caused excessive temperature. repairing related resistance poly-Si according scaling.
Owing to their simple and low-cost architecture, extended-gate biosensors based on the combination of a disposable sensing part reusable transducer have been widely utilized for label-free electrical detection chemical biological species. Previous studies demonstrated that sensitive selective ions biomolecules can be achieved by controlled modification with an ion-selective membrane receptors interest. However, no systematic performed impact performance. In this paper, we introduce concept...
Wearable devices, such as actigraphy monitors and continuous glucose (CGMs), capture high-frequency data, which are often summarized by the percentages of time spent within fixed thresholds. For example, data categorized into sedentary, light, moderate-to-vigorous activity, while CGM divided hypoglycemia, normoglycemia, hyperglycemia based on a standard range $70\unicode{x2013}180$ mg/dL. Although scientific clinical guidelines inform choice thresholds, it remains unclear whether this is...
<title>Abstract</title> Nanosheet field-effect transistors (NS FETs) have been introduced as cutting-edge technology in the foundry business. The NS FETs exhibit superior gate controllability and output current compared to conventional Fin FETs. However, face challenges due presence of substrate parasitic n-type metal-oxide-semiconductor (NMOS), which increases off-state (<italic>I</italic><sub>OFF</sub>) impacts overall device reliability. In this context, trench (TG) proposed a solution,...
Wearable head-mounted display (HMD) smart devices are emerging as a smartphone substitute due to their ease of use and suitability for advanced applications, such gaming augmented reality (AR) [1–2]. Most current HMD systems suffer from: 1) lack rich user interfaces, 2) short battery life, 3) heavy weight. Although HMDs (e.g. Google Glass) touch panel voice commands the interface, interfaces solely extensions not optimized HMD. Recently, gaze was proposed an interface [2], but cannot realize...
An on-the-fly self-healing device is experimentally demonstrated for sustainability of space electronics. A high temperature, which generated by Joule heating in a gate electrode, provides an on-chip annealing damages induced ionizing radiation, hot carrier, and tunneling stress. With the process, highly scaled silicon nanowire gate-all-around field-effect transistor shows improved long-term reliability logic transistor, floating body DRAM, charge-trap Flash memory, respectively. thermally...
The hot-carrier degradation of the junctionless mode (JM) and inversion (IM) five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for first time. It found that drain current induced by injection (HCI) in JM-FET less than IM-FET same dimensions bias conditions, because bulk conduction mechanism JM-FET, which contrast to surface IM-FET. results are obtained using electrical measurements numerical simulations. analysis how HCI affects lifetime reliability GAA great...
Gate dielectric damage caused by both internal and external stresses is becoming worse because of aggressive complementary metal-oxide-semiconductor (CMOS) scaling. However, conventional technologies for reduction using thermal annealing during fabrication have some limitations. As a result, there growing demand that will cure CMOS as new paradigm improving long-term reliability. This review paper reexamines self-recovery technologies, which are fully compatible with fabrication. Although...
Osteoarthritis (OA) is a long-term degenerative condition of the joints, characterized by persistent inflammation, progressive cartilage breakdown, and impaired mitochondrial function. Recent studies have shown that hyperactivation mTORC1 pathway metabolic reprogramming chondrocytes contribute to disease progression. Nitazoxanide (NTZ), an oral antiparasitic agent approved Food Drug Administration, has anti-inflammatory protective effects in various situations; despite this, its application...
This paper introduces a design scheme that improves Energy-Delay Product (EDP) in conventional Dynamic Voltage Scaling (DVS) systems by exploiting timing margins. To achieve this scheme, we designed high-speed Critical Path Monitor composed of several Replicas, Timing Checker, and Toggle Flip-Flop. The replicas are implemented based on our proposed algorithm, which considers the following two facts: (a) voltage scaling behavior logic interconnect fundamentally different; (b) various gates...
The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current p-n junction between body and drain, for first time. effective recovery voltage pulse time were optimized to cure produced hot-carrier injection. Moreover, iterative cyclic curing experimentally demonstrated. Through low-frequency noise analyses, degradation verified identifying trap density along depth dielectric. Furthermore, this proposed method nearly same characteristics...
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those glass substrates with relatively high heat treatments is inevitable. To solve these problems, local electro-thermal annealing (ETA) method was applied a-IGZO TFTs processed at low temperature enhance inferior under...
A shift in threshold voltage caused by total ionizing dose (TID) is problematic the MOSFET, especially aerospace applications. Unlike traditional methods to minimize damage from TID, this letter, a novel electro-thermal annealing method cure TID-induced demonstrated for first time. In concept, conventional hardening or shielding techniques are not used. gate-all-around MOSFET structure, dual gate electrodes were employed as an embedded nanowire heater generate localized Joule heat, which can...
Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for beyond 3-nm node technology. However, difficulties remain mass production of the NS FETs. One concerns is increased OFF-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{OFF}}$ </tex-math></inline-formula> ) due to leakage from substrate parasitic channel. Since FET includes a 2-D on bottom...