A5041409707- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Antenna Design and Analysis
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Antenna and Metasurface Technologies
- Magnetic properties of thin films
- Microwave Engineering and Waveguides
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Organic Electronics and Photovoltaics
- Wireless Communication Networks Research
- Plasma Diagnostics and Applications
- Semiconductor materials and interfaces
- Shape Memory Alloy Transformations
- Transition Metal Oxide Nanomaterials
- Magnetic and transport properties of perovskites and related materials
Intel (United States)
2023-2024
Inha University
2024
Georgia Institute of Technology
2008-2023
Korea Advanced Institute of Science and Technology
2014-2022
University of California, San Diego
2021
The University of Texas at Dallas
2021
Samsung (South Korea)
1989-2011
Kyung Hee University
2004
Iowa State University
1987-1989
Samsung Advanced Institute of Technology (South Korea)
1989
High-performance organic field-effect transistors (OFETs) based on polyelectrolyte gate dielectric and electrospun poly(3-hexylthiophene) (P3HT) nanofibers were fabricated a flexible polymer substrate. The use of UV-crosslinked hydrogel including ionic liquids for the insulating layer enabled fast large-area fabrication transistor arrays. P3HT directly deposited methacrylated During UV irradiation through patterned mask, methacrylate groups formed covalent bonds with layer, which provides...
Triboelectric nanogenerators with nature-replicated interface structures are presented. Effective contact areas of the triboelectric surfaces largely enhanced because densely packed nano-in-micro hierarchical in nature. The enlarged area causes stronger charge density, which results output power increment. engineering also allows improved humidity resistance, is an important parameter for stable energy harvesting. As a service to our authors and readers, this journal provides supporting...
Highly stretchable conductive composite lines with an ordered zigzag structure are prepared. The high stretchability arises from the interpenetrating network between polymer gel and Ag nanoparticles, as well morphology. Double transfer of structures in a perpendicular configuration allows for fabrication 2D electrodes.
A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for unipolar switching resistance-change-based device, as in figure. The decreases dramatically upon scaling sizes smaller than 100 nm×100 nm. High-density universal can be fabricated by combining this node element selective switch.
A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon were experimentally demonstrated after verifying characteristics HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>X</i></sub> (HZO) film using metal-ferroelectric-metal capacitor. fabricated showed distinguishable polarization switching...
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from microscopic dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity antiferroelectricity, respectively. However, the recently discovered antiferroelectrics fluorite structure (HfO2 and ZrO2) are different: A non-polar phase transforms into by breaking upon application an field. Here, we show that this structural...
Conventional resistive crossbar array for in‐memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” that harnesses transient current charge transfer is gaining attention as it 1) only consumes dynamic power, 2) has no DC paths avoids severe drop (thus, selector‐free), 3) can be fabricated on top of complementary metal–oxide–semiconductor (CMOS) circuits 3D‐stacking. For first time, ferroelectric Hf 0.5 Zr O 2 (HZO) capacitive...
A comprehensive analysis of the gate-induced drain leakage (GIDL) current vertically stacked nanowire (VS-NW) FETs was carried out. In particular, two different operational modes VS-NW, an inversion mode (IM) and a junctionless (JM), were compared. The GIDL JM-FET considerably smaller than that IM-FET, reason for difference consequently determined by numerical simulations. It found source between IM-FET in source/drain (S/D) doping concentration, where depletion width becomes tunneling...
A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure, demonstrated on bulk wafer for the first time. The proposed VJ-FET mitigates issues variability and fabrication complexity that are encountered in multi-NW FET (VM-FET) based an identical structure VM-FET, as recently reported, harnesses source drain (S/D) junction its operation thus inversion mode. Variability...
Since the discovery of ferroelectricity in doped/alloyed HfO2 and ZrO2 thin film, many device engineers have been attracted to its sustainable at thickness a few nanometer. While most previous studies mainly focused on ferroelectric properties thermally atomic layer deposited (THALD) Hf0.5Zr0.5O2 (HZO), plasma-enhanced ALD (PEALD) HZO has not received much attention. In this work, direct comparison between two types films is carried out, where we found that tradeoff exists these fabrication...
Abstract Neuromorphic hardware computing is a promising alternative to von Neumann by virtue of its parallel computation and low power consumption. To implement neuromorphic based on deep neural network (DNN), number synaptic devices should be interconnected with neuron devices. For ideal DNN, not only scalability consumption, but also linear symmetric conductance change large levels required. Here, an all‐solid‐state polymer electrolyte‐gated transistor (pEGST) fabricated entire silicon...
A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use wet etching. The driving current increased by 5-fold due to inherent stacked five-level nanowires, thus showing good feasibility three-dimensional integration-based high performance transistor. developed fabrication process, which simple and reproducible, used create stiction-free uniformly sized aid one-route...
Neuro-inspired deep learning algorithms have shown promising futures in artificial intelligence. Despite the remarkable progress software-based neural networks, traditional von-Neumann hardware architecture has suffered from limited energy efficiency while facing unprecedented large amounts of data. To meet performance requirements neuro-inspired computing, large-scale vector-matrix multiplication is preferred to be performed situ, namely compute-in-memory. Non-volatile memory devices with...
The effects of Ni and Ni0.83Pt0.17 alloy electrodes on the resistance switching dc-sputtered polycrystalline NiO thin films were investigated. initial off-state resistances similar to that Pt∕NiO∕Pt film. However, after first cycle switching, significantly decreased in with electrode. It can be attributed migration from films. improvement data dispersion parameters is explained terms decrease effective thickness resulting Ni.
Abstract To prepare for the upcoming big‐data era, numerous attempts are underway to develop a neuromorphic system which is capable of imitating biologic neural network. Despite significant improvements software‐based artificial networks (ANNs) recently, they remain inefficient in terms energy use. Alternatively, many researchers have been attracted hardware‐based ANNs by fundamentally mimicking circuits and synapses. In this study, two‐terminal silicon‐channel synapse (SINAPSE) with...
Ferroelectric-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for in-memory computing. In this two-part article, we explore feasibility of FeFET-based 3-D NAND architecture both in situ training and inference. To address challenge erase-by-block NAND-like structure, propose experimentally...
Ferroelectric-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory (NVM) devices with the potential for in-memory computing. In this two-part article, we explore feasibility of FeFET-based 3-D NAND architecture both in situ training and inference. To address challenge erase-by-block a NAND-like structure, propose...
To scale the ferroelectric random access memory (FeRAM) technology toward 28 nm or beyond, it is critical to develop stacked capacitor (with sufficient surface area) allow good sense margin for 1-transistor- 1-capacitor (1T1C) bit cell. Therefore, enable 3-D integration in back-end-of-line (BEOL) process, essential optimize fabrication recipes low-thermal budget (<; 400 °C). In this regard, we investigated low-temperature process Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Doped HfO2-based ferroelectric field-effect transistor (FeFET) is being actively explored as an emerging nonvolatile memory device with the potential for in-memory computing. In this work, we identify a new challenge of partial switching, namely “history effect” in minor loop dynamics. We develop testing protocol to experimentally measure different transition paths both capacitors (FeCap) and 28-nm high-k metal-gate (HKMG) FeFET Part I. The measurement results suggest that intermediate...
Despite tremendous interests in ferroelectric field-effect transistors (FEFETs) for embedded, data-centric applications, the fundamental trade-offs between memory window (MW) and write voltage to optimize performance remains poorly understood. To that end, we fabricated (FE) ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based, p-type FEFETs studied impacts of FE interfacial oxide layer (IL) thicknesses ( t...
Resistive crossbar arrays for in-memory computing suffer from high static current/power, serious IR drop, and sneak paths. To overcome these challenges, "capacitive" array that relies on transient current charge transfer is becoming attractive since it (1) consumes only dynamic power, (2) has no DC paths avoids severe drop along wires, thus selector-free, (3) can be fabricated top of the CMOS circuits potential 3D stacking. In this work, first time, we experimentally demonstrated a...
Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides in dynamic random-access memories (DRAMs). The microstructure overall functional response therein often dominated by the underlying substrate or layer, which, however, is poorly understood due difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on nanobeam...
The hot-carrier degradation of the junctionless mode (JM) and inversion (IM) five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for first time. It found that drain current induced by injection (HCI) in JM-FET less than IM-FET same dimensions bias conditions, because bulk conduction mechanism JM-FET, which contrast to surface IM-FET. results are obtained using electrical measurements numerical simulations. analysis how HCI affects lifetime reliability GAA great...