A5108949844- Ferroelectric and Piezoelectric Materials
- Diamond and Carbon-based Materials Research
- Luminescence Properties of Advanced Materials
- Thin-Film Transistor Technologies
- Photonic and Optical Devices
- Advanced Sensor and Energy Harvesting Materials
- Optical measurement and interference techniques
- Innovative Energy Harvesting Technologies
- Advanced optical system design
- Advanced Measurement and Metrology Techniques
- Advancements in Photolithography Techniques
- Solid-state spectroscopy and crystallography
- Electronic and Structural Properties of Oxides
- Electron and X-Ray Spectroscopy Techniques
- Acoustic Wave Resonator Technologies
- Adaptive optics and wavefront sensing
- Perovskite Materials and Applications
- Multiferroics and related materials
- Catalytic Processes in Materials Science
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic and transport properties of perovskites and related materials
- Optical Coatings and Gratings
- Ion-surface interactions and analysis
Harbin Institute of Technology
2024-2025
Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning those has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO 3 thin films synthesized reactive pulsed-laser deposition nitrogen...
Multilateral shearing interferometers (multi-LSIs) utilize the phase difference information of multiple shear directions with high accuracy and strong noise resistance. However, interferogram fringe contrast multi-LSIs can reverse due to effect modulation, leading incorrect measurement result. This issue has lacked comprehensive quantitative research effectively guide elimination its effects. In this work, a analysis modulation is proposed. paper rigorously derives function, analyzing...
Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric still facing dual challenges low density efficiency to achieve state-of-the-art performance. Their large sharp first-order phase transition usually results a easy breakdown, severely obscuring its future application. In this study, we demonstrate that...