In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is designed and developed. With 1200-V, 100-A rating, each switching element composed of four paralleled SiC junction gate field-effect transistors (JFETs) with two antiparallel Schottky barrier diodes. The stability the assembly processes confirmed 1000 cycles −40 °C to +200 thermal shock tests 1.3 °C/s temperature change. static characteristics are evaluated results show 55 mΩ on-state resistance phase leg...

This paper proposes a method to measure the junction temperatures of insulated-gate bipolar transistors (IGBTs) during converter operation for prototype evaluation. The IGBT short-circuit current is employed as temperature-sensitive electrical parameter (TSEP). calibration experiments show that has an adequate temperature sensitivity 0.35 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm...

The low power losses of silicon carbide (SiC) devices provide new opportunities to implement an ultra high-efficiency front-end rectifier for data center supplies based on a 400- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX"> ${\rm V}_{\rm dc}$</tex></formula> distribution architecture, which requires high conversion efficiency in each stage. This paper presents 7.5-kW three-phase buck with 480-...

This paper presents recent research on several silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic characteristics, which show the advantages over their Si counterparts. temperature dependency of these characteristics has also presented in this paper. Then, simulation work paralleling operation SiC MOSFETs based a verified device model Pspice is to impact parasitics circuit switching performance.

This paper presents the characteristics of a 1200 V, 33 A SiC MOSFET and 60 schottky barrier diode (SBD). The switching devices are tested by double pulse test (DPT) based on current-source structure at voltage levels up to 680 V current 20 A. In addition, these devices, 7.5 kW, three-phase buck rectifier for 400 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> architecture data center power supply is designed. total loss this calculated...

This paper presents the paralleling operation of three-phase current-source rectifiers (CSRs) as front-end power conversion stage data center supply systems based on 400- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$\hbox{V}_{\rm dc} $</tex-math></inline-formula> delivery architecture, which has been proven to have higher efficiency than traditional ac architectures. A control algorithm paralleled CSRs is...

SCARF1 (scavenger receptor class F member 1, SREC-1 or SR-F1) is a type I transmembrane protein that recognizes multiple endogenous and exogenous ligands such as modified low-density lipoproteins (LDLs) important for maintaining homeostasis immunity. But the structural information mechanisms of ligand recognition are largely unavailable. Here, we solve crystal structures N-terminal fragments human SCARF1, which show forms homodimers its epidermal growth factor (EGF)-like domains adopt...

Harnessing solar power is essential for addressing the dual challenges of global warming and depletion traditional energy sources.However, fluctuations intermittency photovoltaic (PV) pose its extensive incorporation into grids.Thus, enhancing precision PV prediction particularly important.Although existing studies have made progress in short-term prediction, issues persist, underutilization temporal features neglect correlations between satellite cloud images data.These factors hinder...

In flight tests, to demonstrate the performance of integrated navigation systems, which are strapdown inertial systems/celestial systems (SINS/CNS), will involve a lot effort and heavy financial budget. So, it is important design functional self-contained hardware in loop simulation system on ground for solving verification SINS/CNS systems. Aiming at main program, high precision, versatile better real-time hybrid presented. The adopts hardware-functional modularization software-flow...

This paper presents a SiC JFET-based, 200°C, 50 kW three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed four paralleled JFETs with two anti-parallel Shottky Barrier Diodes (SBDs). The substrate layout inside designed to reduce package parasitics. Then, experimental static characteristics are obtained over wide range temperature, low on-state resistance shown up 200°C. dynamic performance this...

An overlap time for two commutating switches is necessary to prevent current interruption in a three-phase buck rectifier, but it may cause input distortion. In this paper, modified pulse-based compensation method proposed compensate the time. addition traditional which places based on voltage polarity, new first minimizes reduce its effect and then compensates pulse width according sampled current. It verified by experiments that has better performance than method, especially when...

This paper presents a 7.5 kW liquid cooled three-phase buck rectifier which will be used as the front-end in 400 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> architecture data center power supply systems. SiC MOSFETs and Schottky barrier diodes (SBDs) are parallel to obtain low semiconductor losses. Input output filters designed inductor core material is compared reduce passive component A low-loss modulation scheme 28 kHz...

Research on silicon carbide (SiC) power electronics has shown their advantages in high temperature and efficiency applications. This paper presents a SiC JFET based, 200°C, 50 kW three-phase inverter module evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed four paralleled JFETs (1200 V/25 each) two anti parallel Shottky Barrier Diodes (SBDs). The substrate layout inside designed to reduce package parasitics. Then, experimental...

The energy efficiency of typical data centers is less than 50% because more half the power consumed during conversion, distribution, cooling, etc. In this paper, a combination two approaches to improve supply implemented and experimentally verified. One approach uses high voltage DC architecture, designed reduce distribution loss remove unnecessary conversion stages. other employs wide band gap (WBG) devices, including silicon carbide (SiC) gallium nitride (GaN) FETs diodes, which helps...

Cascaded H-bridge (CHB) topology receives wide attention in the battery energy storage systems (BESSs) due to its modular structure. When finite-set model predictive control (FS-MPC) is applied handle with complex issues of three-phase CHB-based BESSs, problem computation amount emerging traversal algorithm. In this paper, a successive searching algorithm for FS-MPC proposed simplify subset. space-vector diagram, successively adjusts direction find optimal voltage vector, according cost...

Wide band gap (WBG) power devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have been innovatively applied in the data center converters, which are based on high voltage DC (HVDC) distribution architecture, to evaluate potential efficiency improvement. For front-end AC-DC rectifier, a buck rectifier using SiC devices was implemented. The were tested at first obtain static switching characteristics. number of parallel, frequency input/output filters investigated. A prototype...

The overvoltage caused by dc-link inductor current interruption is a serious problem in the source converters. It becomes an even more challenging issue when fast-switching SiC MOSFETs are applied as switches these protection required to have nanosecond-level response time protect devices. Addressing this challenge, paper proposes novel scheme constituted diode bridge and high-power transient-voltage-suppression (TVS) diodes. can detect clamp within less than 50 ns device from breakdown....

This paper investigates the gate voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> ) oscillation of paralleled SiC MOSFETs during fast switching transient. Based on study, proposes to add coupled inductance and/or additional path Kelvin source suppress amplitude oscillation. The considers 1-in-1 and 2-in-1 power modules, devices with on-chip current sense, which are used in many HEV/EV (Hybrid Electric Vehicle/Electric Vehicle)...

This paper develops a liquid cooled high efficiency three-phase current source rectifier (CSR) for data center power supplies based on 400 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> architecture, using SiC MOSFETs and Schottky diodes. The 98.54% is achieved at full load. rectifiers are paralleled to achieve ratings system redundancy. balance hot-swap of CSRs realized in simulation master-slave control. Moreover, an improved...

The IGBTs are dominantly used in traction inverters for automotive applications. Because the Si-based device technology is being pushed to its theoretical performance limit such applications during recent years, gate driver design playing a more prominent role further improve inverter loss performance. conventional application needs consider worst case scenarios which adversely semiconductor devices' switching speed most frequent operation regions. Specifically, when selecting resistors,...

A cascade H-bridge (CHB) stands out for its modular structure and high output voltage among various power converter schemes battery energy storage systems. While space vector pulsewidth modulation (SVPWM) offers better utilization of the dc-link voltage, it is seldom employed in CHB designs due to substantial computational burden associated with an increasing number levels converter. This article introduces a novel hybrid SVPWM approach multilevel In this proposed system, reference...

This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel JFETs and diodes. The conduction switching are tested from room temperature to 150°C. speed increases when rises. In test, gate driver could bring false peak in turn-off waveform. experimental results show that is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally losses efficiency this evaluated.

This paper presents a 30 kW Si IGBT based three-phase traction inverter for operating at the junction temperature of 200°C with reduced cooling and improved efficiency in hybrid electric vehicle (HEV) applications. The high capable devices module is developed operation 105°C engine coolant, leading to lower cost higher power density. A variable switching frequency pulse width modulation (VSFPWM) scheme employed relieve negative effect on loss. experimental results demonstrate that converter...