In this article, a novel waveguide reconfigurable Schottky diode-based frequency doubler with tunable multiband high efficiency output is proposed and demonstrated. The achieved by input matching cross-band circuits matching. the doubler, whole cavity composed of two parts: cavities coused main circuit associated cavity. These are designed to match impedance for corresponding band. adopted weight optimization fulfill multiband. Then, assembled into through reduced-height choke flange, which...

This study focused on evaluating the influence of Clostridium butyricum and Brevibacillus strains egg production, quality, immune response antioxidant function, apparent fecal amino acid digestibility, jejunal morphology when supplemented as probiotics in diets laying hens peak phase. A total 288 healthy 30-week-old Hy-Line Brown were arbitrarily assigned to four dietary groups, which included control diet with 0.02% C. zlc-17, lwc-13, or zlb-z1, for 84 days. The results showed that sp....

This article investigates the influence of benzocyclobutene (BCB) passivation on irradiation response InP-based high electron mobility transistors (HEMTs). An abnormal behavior is observed, in which threshold voltage initially shifted negatively and then positively with proton fluence. Severe transconductance collapse an increased breakdown are observed at RF characteristics exhibit a more robust radiation resistance compared to dc characteristics. By conducting TCAD simulation, two defects...

Dielectric film on graphene severely affects the performance of field-effect transistors (GFETs). The authors investigated AlN dielectric by Raman microscopy. deposition led to appearance disorder-related peaks and a wider Raman-active peak. intensities modes decreased exponentially with an increase in layer number graphene, indicating that mainly affected surface graphene. According experimental results, suggested few-layer might be better choice than single-layer for application GFET.

InAlAs/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation fmax are reported. An HEMT 100-nm gate length width of 2 × 50 μm shows excellent DC characteristics, including full channel current 724 mA/mm, extrinsic transconductance gm.max 1051 mS/mm, drain—gate breakdown voltage BVDG 5.92 V. In addition, this device exhibits = 249 GHz 415 GHz. These results were obtained by fabricating asymmetrically recessed...

A high-reliability small-signal equivalent circuit model for indium-phosphide-based high-electron-mobility transistors (InP-based HEMTs) is proposed. de-embedding scheme the representative structure utilized in this with an electromagnetic simulation approach to consider distributed extrinsic parasitic elements. The intrinsic part of directly extracted Y-parameter two-port network. extraction parametric elements was performed under different biases and three gate widths ( <inline-formula...

The &lt;i&gt;Isatis indigotica&lt;/i&gt; extract is widely used in clinical practice for the treatment of influenza, epidemic hepatitis, encephalitis B etc. goal this study was to investigate whether coinjection with foot-and-mouth disease virus (FMDV) DNA vaccine could increase protective immune response. Mice were vaccinated twice either FMDV plus or alone. Compared group alone, that received observed a significant not only FMDV-specific antibody response but also T cell proliferation...

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed. The the equation, which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in thin base velocity overshoot effect depleted collector. In addition, accounts several effects bandgap narrowing, variable effective mass, doping-dependent mobility at high fields. Good agreement between measured simulated values of...

Due to the development of digital transformation, intelligent algorithms are getting more and attention. The whale optimization algorithm (WOA) is one swarm intelligence widely used solve practical engineering problems. However, with increased dimensions, higher requirements put forward for performance. double population distributed collaboration reverse learning ability (DCRWOA) proposed slow convergence speed unstable search accuracy WOA in In DCRWOA algorithm, novel strategy constructed....

The layer structure of InGaAs/InP double heterojunction bipolar transistor (DHBT) is designed to enhance the frequency performance and breakdown voltage. composition-graded base used decrease transit time. InGaAs setback two highly doped InGaAsP layers are eliminate conduction band spike collector. submicron-emitter DHBT fabricated successfully. contact resistance greatly decreased by optimization metals. voltage more than 6 V. current gain cutoff as high 170 GHz maximum oscillation reached...

Abstract. The following two models were combined to simultaneously predict CO2 and H2O gas exchange at the leaf scale of Populus euphratica: a Farquhar et al. type biochemical sub-model photosynthesis (Farquhar al., 1980) Ball stomatal conductance (Ball 1987). parameters [including maximum carboxylation rate allowed by ribulose-1,5-bisphosphate carboxylase/oxygenase (Rubisco) (Vcmax), potential light-saturated electron transport (Jmax), triose phosphate utilization (TPU) day respiration...

This paper introduces a novel surface passivation using Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (20-nm)/Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances HEMTs. Notably different from the conventional approach, an...

Benzocyclobutene (BCB) has been widely used as passivation and interlayer dielectric for sub-millimeter-wave applications terahertz monolithic microwave integrated circuits (TMICs). In this work, the influence of BCB on 100-nm InP-based high-electron-mobility transistors (HEMTs) was investigated. A set HEMTs with different gate recess structures were fabricated compared. SiO2 hard mask adopted in recess, which contributed to an improved device performance after passivation. DC RF...

The intrinsic point defects in InAlAs have been studied by first-principles calculations, with a simplified approach to rescale the charge transition levels from semilocal hybrid functional level. Both antisite and vacancy exhibit high sensitivity growth conditions. For Al-poor, In-poor As-poor conditions, AsAl, AsIn VAs demonstrate lowest defect formation energy, respectively. All including AsIn, InAs AlAs, donor-like behavior band gap as well VAs. VIn VAl are amphoteric defects, which can...

An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2 × 50 μm and source-drain space 2.4 μm. The T-gate defined by beam lithography in trilayer PMMA/Al/UVIII. exposure dose the development time were optimized, followed an appropriate residual resist removal process. These devices also demonstrated excellent DC RF characteristics: extrinsic maximum transconductance, full channel current,...

In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the problem gate recess InAlAs/InGaAs InP-based HEMTs. The nonstoichiometric InP etch stopper layer was found be result donor-like defects brought by HF damage, bringing troubles like kink effect, high leakage current deteriorated noise performance. Through method treatments, HEMTs exhibit excellent DC performances, demonstrating a low currents 10 -8 A/um, peak transconductance 1100mS/mm, an improved...

A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger 1 × 15μm2. breakdown voltage more than 7 V, the maximum collector current could be 100 mA. gain cutoff frequency as high 155 GHz oscillation reaches 253 GHz. heterostructure can offer 70mW class-A output power at W band density 1.2W/mm.

We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field in transit time. The bias-dependent depletion charge is obtained analytically, which takes into account modulation. Then, measurement based voltage-dependent time formulation implemented. As result, over wide range biases, developed shows good agreement between modeled...

In this letter, we present a novel analysis and design approach of self-oscillation frequency (SOF) for 0.8-μm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) emitter-coupled logic (ECL) current-mode (CML) static dividers. SOF ECL CML dividers is designed to be the maximum value after theoretical multiparameter optimization. The results show that divider 62 37.5 GHz, respectively. With sinusoidal waveform input, operating range from 0.1 65 55 while cut-off f <sub...