To investigate the impacts of water/supercritical CO2-rock interaction on micro-mechanical properties shale, a series high-temperature and high-pressure immersion experiments were performed calcareous laminated shale samples mined from lower submember third member Paleogene Shahejie Formation in Jiyang Depression, Bohai Bay Basin. After that, grid nanoindentation tests conducted to analyze influence time, pressure, temperature parameters. Experimental results show that damage caused by was...

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured figure of 5.1 dB with an associated gain 7 from 92 to 95 GHz, the small signal 13.3 at 94 GHz 17 89 5.5 91 GHz. An eight-stage LNA built by cascading four these chips demonstrates 49 6.5 A rigorous analysis procedure was incorporated in design, including accurate active device modeling full-wave EM...

ABSTRACT In deep and ultra‐deep wells, drilling fluids often experience increased filtration loss due to elevated temperatures high salinity. To solve this problem, 5 g of N, N‐dimethylacrylamide (DMAA), 13 2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid (AMPS), 2 4‐acryloylmethiolane (ACMO), 0.2 graphene oxide (GO) were polymerized through aqueous phase polymerization at 50°C for h form the Graphene DMAA, AMPS, ACMO Composites (GO‐NAA). The synthesized nanocomposite, GO‐NAA, was characterized...

The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS planar-transformer broadside-coupled line are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum relative bandwidths in excess 3:1 achieved. Simulated performances using full wave electromagnetic analysis shown agree with the measured results. Two accurate equivalent circuit models constructed either simulated or S-parameters developed for Marchand transformer...

This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-μm pseudomorphic InAlAs-InGaAs-InP HEMT technology. A two-stage single-ended LNA has been designed, fabricated and tested. It exhibits measured small signal gain 9 dB at 142 GHz, more than 5-dB from 138-145 GHz. is highest frequency ever reported three terminal devices.

A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, receiver low noise amplifier and mixer is discussed. It used as the front-end of homodyne FMCW radar for target range rate sensing applications. The 6.9-mm*3.6-mm was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. transmitter output power more than 10 dBm frequencies in 90-94 GHz, maximum tuning bandwidth 500 MHz VO. channel...

Monolithic W-band voltage control oscillators (VCOs) have been developed based on 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low noise and power high-electron-mobility transistor (HEMT) technologies. An output of 7.6 dBm at 92 GHz was obtained by using the low-noise HEMT, 8.8 90.5 HEMT without any tuning matching structures. These VCOs can also be integrated with other monolithic components same device technology. The success this development makes possible high-level integration...

Composite post insulators are crucial facilities in substations and prone to significant damage during seismic disasters. However, existing research lacks motion models suitable for power rarely involves stochastic models. Furthermore, considering the non-stationary characteristics of motion, predicting response nonlinear systems under excitation becomes exceedingly challenging. In view this, composite appropriate has been studied. First, a ground model, conforming Code Seismic Design...

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. consists two-stage low-noise amplifier single-balanced mixer. mixer has been designed using the gate Schottky diodes inherent to process. Measured results complete show conversion gain 5.5 dB double-sideband noise figure 6.7 at 94 GHz. Also presented is performance characterized over -35 degrees C +65 temperature range. design was first...

Control charts are significant diagnostic tools to detect and identify the quality fluctuation of complex industrial process. In practical production process, attention is being paid monitoring mixture control charts, which usually coupled by two or more basic modes. This research present a hybrid pattern recognition method for charts. The proposed mainly covers feature fusion extraction (FFE) kernel extreme learning machine (KELM) with modified grey wolf optimizer (MGWO). FFE module applies...

The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs HEMTs (high-electron-mobility transistors) with record gain performance at W-band frequency. two-stage amplifier has a small-signal of 9 dB can deliver 0.1-W output 5.9-dB associated 6.6% power-added efficiency 93.5 GHz. successful first pass design the MMIC (monolithic microwave integrated circuit) is due to superior device millimeter-wave techniques.< <ETX...

This paper deals with the problem of robust reliable control for a class uncertain neutral delay systems. The aim was to design state feedback controller such that plant remained stable all admissible uncertainties as well actuator faults among prespecified subset actuators or sector-type non-linearity, independently time. A linear matrix inequality approach developed solve addressed an H X norm bound constraint on disturbance attenuation.

The fault detection problem under structured uncertainties in the system matrices is considered. sensitivity of robust one important issues considered and isolation development. To enhance this characteristic, an unconstrained optimization approach taken to design a observer. aims at enhancing robustness without sacrie cing faultdetectionsensitivity,whichwasseldomaddressedbefore.Furthermore,otherobjectivesrelatedtotheobserver gain eigenstructure conditioning observer are also into account....

High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an mixer (IRM). These MMICs were fabricated in 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. demonstrated typical 17-dB gain 4.5-5.5-dB noise figure at 94 GHz. complete IRD has measured conversion of 7-9 dB with single-side-band 6 when downconverting 93-95-GHz RF signal to...

The authors report a Q-band two-stage MMIC low-noise amplifier based on 0.1- mu m pseudomorphic InAlAs-InGaAs-InP HEMT technology. has achieved an average noise figure of 2.3 dB with associated gain 25 over the band from 43 to 46 GHz. This is best result ever reported for monolithic at this frequency range. In addition, InP-based consumes only 12 mW, which least three times lower than GaAs-based counterpart, indicating that HEMTs are well suited very high density integration or application...

The development of W-band monolithic low noise amplifiers (LNAs) using a fully passivated 0.1 µm pseudomorphic InAlAs/InGaAs/InP HEMT technology is presented. Both wafer passivation and stabilisation bakes have been introduced, for the first time, to InP MMIC process make it more suitable production. A three-stage single-ended 94 GHz LNA shows measured figure 3.3 dB 20 associated gain. 2.3 achieved single-stage at GHz. These results represent state-of-the-art performance LNAs this frequency....

An ultra-low-noise W-band monolithic three-stage amplifier based on 0.1- mu m pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) devices has been developed. This a measured noise figure of 3.5 dB with an associated small signal gain 21 at 94 GHz. is the best reported performance high-gain low-noise (LNA), significantly improved compared previous records in terms and gain. Accurate modeling techniques were essential to success this circuit design, which included active device...

A monolithic microwave integrated circuit (MMIC) balanced amplifier covering the entire W-band (75-110 GHz) has been developed using 0.1-mm pseudomorphic InAlAs-InGaAs-InP HEMT technology. This MMIC demonstrated first pass success with a measured gain of 23+or-3 dB and good return loss from 75 to 110 GHz. The noise figure this is about 6 around 94 believed be best reported broadband high-gain performance amplifiers W-band.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This paper deals with the fault detection problem for linear system unknown inputs. The H/sub /spl infin// norm and H/spl I.bar/index are employed to measure robustness inputs sensitivity, respectively. Furthermore, by using pole assignment approach, is transformed an unconstrained optimization problem. With aid of gradient-based explicit formula designing desirable observer gain derived. On other hand, sensitivity over a finite frequency range can also be solved proposed method, in which...

W-band MMIC (monolithic microwave integrated circuit) direct-detection receivers for passive millimeter-wave imaging applications have been demonstrated. These were developed using InGaAs HEMT (high electron mobility transistor)-based W-based LNA (low-noise amplifier) and preamplified detector MMICs. The first receiver uses a 50-dB-gain, 6-dB-noise-figure amplifier Schottky-barrier-diode waveguide detector. four LNAs. second consists of two three-stage LNAs an chip. Individual with camera...

A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA demonstrated a noise figure of 4.3 dB and an associated small-signal gain 19 at 100 GHz with low DC power consumption 20 mW. demonstrates the potential InP HEMT technology for higher millimeter-wave applications. The performance is comparable best reported results using GaAs-based PM HEMTs even this first...