This paper describes cryogenic broad-band amplifiers with very low power consumption and noise for the 4-8-GHz frequency range. At room temperature, two-stage InP-based amplifier has a gain of 27 dB temperature 31 K 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input 1.4 is obtained at 5.7 stage. 0.51 increases 2.4 K. The measurements have been repeated different laboratories using methods are found consistent.

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO based a push-push topology, which employs InP HBT technology with peak f/sub T/'s and max/'s of 75 200 GHz, respectively. produces maximum oscillating 108 GHz delivers an output power +0.92 dBm into 50 /spl Omega/. also obtains tuning bandwidth 2.73 or 2.6% using varactor. A phase noise -88 dBc/Hz -109...

Fabrication of state-of-the-art W-band 0.1- mu m T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) is reported. This device achieved a noise figure 2.1 dB with an associated gain 6.3 at 93.5 GHz. The has maximum 9.6 94 GHz, which extrapolates to F/sub max/ 290 claimed be the lowest ever reported for HEMTs fabricated on GaAs substrates this frequency range.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Herein we report the wafer-scale synthesis of thin-film black arsenic–phosphorus (b-AsP) alloys via two-step solid-source molecular beam deposition (MBD) and subsequent hermetic thermal annealing. We characterize our thin films with a variety compositional structural metrology techniques. X-ray photoelectron spectroscopy energy dispersive determine compositions As0.78P0.22 for films, while reflectivity measurements indicate film thicknesses 6–9 nm. High-resolution transmission electron...

We report here 305 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , 340 xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x graded 0.60 to 0.80. This device has the highest yet reported for gate length combination of any three-terminal device. performance is achieved by using graded-channel design which...

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured figure of 5.1 dB with an associated gain 7 from 92 to 95 GHz, the small signal 13.3 at 94 GHz 17 89 5.5 91 GHz. An eight-stage LNA built by cascading four these chips demonstrates 49 6.5 A rigorous analysis procedure was incorporated in design, including accurate active device modeling full-wave EM...

Direct digital synthesizers (DDS) offer advantages such as precise beam shaping and forming over conventional RF approaches. This paper discusses novel design process techniques that enable direct synthesis of S-band output frequencies using our current InP double-heterojunction bipolar transistor technology with a cantilevered base layer undercut collector. The DDS chip operates at the world record clock rate 9.2 GHz capable generating sinewaves up to 4.56 GHz. It also demonstrates...

Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by delta doping the undoped AlGaAs layer additional planar within InGaAs channel, suitable for high-power applications. has demonstrated to limiting effect high V/sub ds/ Emission spectra 1.1-2.6 eV range analyzed. They show peaks at low energy due recombination mechanisms a long tail hot electrons.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The authors have fabricated 0.1- mu m T-gate pseudomorphic (PM) InGaAs power high-electron-mobility transistors (HEMTs) with record and gain performance at 94 GHz. Devices 40- gate peripheries achieved 10.6-mW output 7.3-dB 14.3% power-added efficiency (PAE). 160- 62.7-mW 4.0-dB 13.2% PAE. believe the superior of these devices is due to combination a short T-gate, high-quality material, optimized device profile, reduction in source inductance vias.< <ETX...

The author's present the DC and RF power performance of planar-doped channel InGaAs high-electron-mobility transistors (HEMTs). (PDC) pseudomorphic GaAs HEMT with 400 mu m gate width exhibited an output 184 mW, corresponding to 460 mW/mm, 4.6-dB saturation gain 25% power-added efficiency at 55 GHz. Although higher density is possible, authors have designed device operate less than 500 mW/mm for thermal reliability reasons. Devices unit finger widths ranging from 30 50 were fabricated...

The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al/sub 0.48/In/sub 0.52/As epitaxial material grown by molecular beam epitaxy semi-insulating InP substrates. contact metals studied were Au, Al, Pt, tri-layer Ti/Pt/Au. barrier heights varied from 0.560 eV for Al n-type AlInAs 0.905 AlInAs, with intermediate values the other studied. sum of each ranged 1.440 1.465 eV, in good agreement...

We have measured the kinetic parameters for removal of SiO2 films from silicon in ultrahigh vacuum using Auger electron spectroscopy and low-energy diffraction, both with without a beam atomic incident on surface. Due to very low vapor pressure SiO2, it is removed only through reduction SiO by excess silicon. find that activation energy rate limiting step thermal desorption 3.54±0.2 eV, so at temperatures below ∼900 °C, thick (∼25 Å) can scarcely be alone, agreement earlier work. Very thin...

Doped Si films were deposited by controlled coevaporation or Ga( p) of Sb(n) and at room temperature on an atomically clean substrate in ultrahigh vacuum. The amorphous then crystallized 230 Å/min heating the to 575 °C. Good crystal quality results, judged Rutherford backscattering transmission electron microscopy. Advantages over normal evaporative doping during molecular beam epitaxial growth ∼750 °C include (1) unity sticking coefficient dopant, (2) no smearing carry-over (3) better...

We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-μm gate length and 1.28-mm output periphery fabricated using this has demonstrated an of 427 mW 19% power-added efficiency at 95 GHz. To our knowledge, is the highest ever reported frequency any solid-state amplifier.

We report on a 2.1 mW low dc power GaAs HBT LNA with 2.0 dB noise figure and 8.9 gain at 2 GHz. This amplifier achieves Gain/NF.P/sub dc/ ratio of merit 2.10 (1/mW) which is the highest reported S-band. Under bias V 0.46 mA (0.92 mW), 5.2 gain, 3.01 Gain/P/sub 5.65 (dB/mW) also in this frequency band. In addition, 2-stage self-biased C-band minimum 2.4 5 GHz, 16.2 only 72 was demonstrated. believed to be lowest performance so far for an above 3 Both LNAs are fabricated using relaxed /spl...

This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-μm pseudomorphic InAlAs-InGaAs-InP HEMT technology. A two-stage single-ended LNA has been designed, fabricated and tested. It exhibits measured small signal gain 9 dB at 142 GHz, more than 5-dB from 138-145 GHz. is highest frequency ever reported three terminal devices.

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with mean time failure (MTTF) of 1.5*10/sup 8/ h at 125 degrees C. Beryllium incorporation and diffusion are controlled through combination reduced substrate temperature increased As/Ga flux ratio during growth, resulting in extremely stable HBT profiles. also demonstrate graded InGaAs surface layers nonalloyed refractory metal contacts that significantly...

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using 23.8-GHz HBT dielectric resonator oscillator (DRO) in conjunction with GaAs-based high electron mobility (HEMT) quadrupler W-band output amplifiers. Good phase noise performance was achieved due to...

We have studied the electroreflectance and photoreflectance spectra from a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum well (MDQW) structure in temperature range 79&amp;lt;T&amp;lt;304 K. The features InGaAs MDQW can be accounted for on basis of two-dimensional density states Fermi level filling factor. A detailed line shape fit makes it possible to evaluate energy, hence electron gas concentration (Ns), as other important parameters structure. Our value Ns is...

The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation observed down to the ambient temperature 18 K. application these devices Q- and E-band low-noise, cryogenically coolable amplifiers demonstrated. measured noise 15 K (noise figure 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB gain at in close agreement prediction simple model. A very low power consumption per stage less than 1 mW recorded. 47...

V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the channel. A device 0.15- mu m T-gate achieved a minimum noise figure 1.5 dB associated gain 6.1 at 61.5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The DC and RF power performance of double heterostructure pseudomorphic InGaAs-AlGaAs-GaAs HEMTs at V-band is reported. A 0.15-mm*400-mm device has demonstrated output 225 mW (0.55 W/mm) with 4.5-dB gain 25.4% power-added efficiency (PAE) 60 GHz. 0.15-mm*320-mm 31.1% PAE 170-mW (0.53 5.3-dB gain. These data represent the highest reported combination power, for a single V-band.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function oxygen ratio [O2/(Ar + O2)] during growth. Increasing enhanced incorporation ITZO film growth reduced concentration deep-level defects associated with vacancies. Under illumination no bias stress, persistent photocurrent were improved increased ratio. Bias stress tests devices also performed without illumination. While high conditions resulted in decreased...

The impulse photoresponse from low temperature (LT) grown GaAs coplanar stripline switches was measured at 1.55 µm using double sliding-contact sampling. response attributed to two-photon absorption as confirmed by the observed quadratic dependence of photocurrent on average incident illumination. devices exhibited a full width half maximum 451 fs and 3 dB bandwidth 190 GHz, which is, date, fastest LT-GaAs this wavelength. peak linearly dependent applied bias showed strong field...

The authors report on a 50-MHz-55-GHz multidecade bandwidth InP-based heterojunction bipolar transistor (HBT) MMIC distributed amplifier (DA) which achieves the widest and highest frequency of operation so far demonstrated for amplifier. HBT DA was fabricated using high-speed 1-μm InAlAs-InGaAs-InP base-undercut technology with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 's xmlns:xlink="http://www.w3.org/1999/xlink">max</sub>...