This paper describes a novel low-noise input-termination-less cascode distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) design. The design was implemented with 0.15 μm gate gallium nitride on silicon carbide GaN-SiC high electron mobility transistor (HEMT) 6 inch wafer process technology. GaN MMIC achieves bandwidth from 100 MHz-45 GHz greater than 10 dB gain and previously benchmarked the first published mm-wave results produced SiC unique input-gate-termination-less...

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO based a push-push topology, which employs InP HBT technology with peak f/sub T/'s and max/'s of 75 200 GHz, respectively. produces maximum oscillating 108 GHz delivers an output power +0.92 dBm into 50 /spl Omega/. also obtains tuning bandwidth 2.73 or 2.6% using varactor. A phase noise -88 dBc/Hz -109...

A fully integrated 6-GHz phase-locked-loop (PLL) fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is described. The PLL intended for use in multigigabit-per-second clock recovery circuits fiber-optic communication systems. circuit consists of a frequency quadrupling ring voltage-controlled oscillator (VCO), balanced phase detector, and lag-lead loop filter. closed-loop bandwidth approximately 150 MHz. tracking range was measured to be greater than 750 MHz at zero...

This paper describes a GaN monolithic microwave integrated circuit (MMIC) cascode feedback amplifier design which achieves up to 8 W of output power and greater than +51 dBm OIP3 across 250-3000-MHz decade bandwidth. The LNA also 20 dB flat-gain the band. was fabricated with 0.25-μm HEMT technology an fT ~ 50 GHz BVgd >; 60 V. A 40-V 750-mA high-bias 51.9 dBm, P1dB 38.5 NF 3 at 2 . 500-mA medium-bias lower 2.5 , 48.4 36.8 same frequency. At optimum low-noise bias V 300 mA, 0.96 dB, 43.4...

We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for amplifiers. This paper introduces new topology DA's incorporates attenuation compensation both input and output transmission lines. A four-section DA using this gain of 15 dB 3-dB bandwidth >15 GHz. The resulting is 84 When normalized to T/, gain-bandwidth-product figure merit DA's, /spl ap/3.67, 55% improvement over existing state-of-the-art...

This paper reports on multi-decade bandwidth GaN HEMT Cascode-distributed power amplifier designs which achieve performance from base-band to over 20 GHz. The MMICs are based a 0.2um AlGaN/GaN low noise T-gate technology with an fT ∼ 75 To increase the MMIC capability of this technology, cascode DA design approach was employed can operate at twice recommended Vds voltage. resulting amplifiers 1–4 Watts saturated CW 100MHz 20GHz operating voltage 30V. Typical OIP3 ≫ 40 dBm and NF 3 dB were...

We report on a 2.1 mW low dc power GaAs HBT LNA with 2.0 dB noise figure and 8.9 gain at 2 GHz. This amplifier achieves Gain/NF.P/sub dc/ ratio of merit 2.10 (1/mW) which is the highest reported S-band. Under bias V 0.46 mA (0.92 mW), 5.2 gain, 3.01 Gain/P/sub 5.65 (dB/mW) also in this frequency band. In addition, 2-stage self-biased C-band minimum 2.4 5 GHz, 16.2 only 72 was demonstrated. believed to be lowest performance so far for an above 3 Both LNAs are fabricated using relaxed /spl...

This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and PldB of 2 watts. The utilizes 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~75 GHz. At power bias (15 V/400 mA), the amplifier NF ~0.7-0.9 dB over 2-8 band. low bias(12 V, 200 ~0.5dB same is believe to be lowest reported for multi-octave in S-and C-band frequency range. In addition, obtains ultra linearity OIP3 43.2-46.5 dBm P1 32.8-33.2 (2 watts) 2-6 bandwidth. PAE at ~28.6-31%....

A novel feedback bias technique for a multistage cascode topology is developed to improve the linearity and reliability of power amplifiers (PAs). Due large parasitic capacitance low substrate resistivity CMOS technology, signal swings are coupled between ports transistors. The proposed method utilized RF leakage signals at gate common-gate (CG) transistor in employing negative feedback, which not only enhances PA, but also alleviates voltage stress drain CG device from 4.5 1.9 V. This...

This paper reports on the results of a new Darlington cascode (DCAS) feedback amplifier topology implemented with 0.5 mum E-mode GaAs PHEMT technology. The employs active self-bias and linearizing circuit for achieving enhanced gain IP3-bandwidth performance. achieves 12.5 dB 16 GHz 3 bandwidth (BW)-a 60% BW improvement over an equivalent conventional design. DCAS obtains IP3 29 dBm 13 BW-an 80% in IP3-BW approach. These improvements have been obtained without significantly compromising...

The authors report on a 50-MHz-55-GHz multidecade bandwidth InP-based heterojunction bipolar transistor (HBT) MMIC distributed amplifier (DA) which achieves the widest and highest frequency of operation so far demonstrated for amplifier. HBT DA was fabricated using high-speed 1-μm InAlAs-InGaAs-InP base-undercut technology with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 's xmlns:xlink="http://www.w3.org/1999/xlink">max</sub>...

The designs and performances of a 2-24 GHz distributed matrix amplifier 1-20 2-stage Darlington coupled based on an advanced HBT MBE profile that increases the bandwidth response amplifiers by providing lower base-emitter collector-base capacitances are presented. has 9.5 dB nominal gain 3-dB to 24 GHz. This result benchmarks highest reported for amplifier. input output VSWRs less than 1.5:1 2.0:1, respectively. total power consumed is 60 mW. chip size measures 2.5*2.6 mm/sup 2/. 7 beyond 20...

This paper reports on a frequency agile GaN LNA MMIC that can be reconfigured for both S- and X-band extending operation over multiple octaves of frequency. The is based 0.15um HEMT technology utilizes FET switches to tune the 3-3.5 GHz Sband 9-11 operation. Switch tuned Sband, amplifier achieves 15 dB gain, NF ranging from 0.9-1.3 dB, an input return-loss better than 10 IP3 29.2-32.8 dBm. X-band, gain 13.5-14.5 1.4-2.2 11-12 29.534.5 To authors' knowledge, this work first band...

A 6-bit digital phase shifter in 0.18-μm silicon-oninsulator (SOI) process is presented. It operates over a 4-7-GHz frequency band and provides 360° of coverage with 5.625° resolution using 64 states. The SOI has compact size 1320 μm × 780 μm. Compared to state-of-the-art 0.15-μm pHEMT-based product design, the IC design five times smaller 2-6 dB higher IP3 power handling capability. To best authors' knowledge, this highest commercial technology. These monolithic microwave integrated circuit...

This letter describes the design and measured performance of an E-/ W-band GaN MMIC low-noise amplifier based on a 90-nm T-gate technology. The technology is characterized by peak fT 145 GHz NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> ~1.2 dB at 50 GHz. LNA comprised four-stage common-source designed to operate over 70-110-GHz frequency band. From 70 89 GHz, achieves 15-17.9 gain 3.5-4.2 75-83 subband. 90 110 from 15.8 19.2...

We have achieved successful monolithic integration of high electron mobility transistors and heterojunction bipolar in the same microwave circuit. used selective molecular beam epitaxy a novel merged processing technology to fabricate integrated circuits that incorporate both 0.2 /spl mu/m gate-length pseudomorphic InGaAs-GaAs HEMTs 2 emitter-width GaAs-AlGaAs HBTs. The HEMT HBT devices produced by MBE fabricated using our HEMT-HBT process exhibited performance equivalent normal baseline...

The authors report on monolithic circuits integrating HBTs and p-i-n diode using a common HBT MBE structure. An variable gain amplifier as resistor achieved of 14.6 dB, bandwidth out to 9 GHz, control range >15 an IP3 28 dBm. A two-stage attenuator from 1-10 GHz X-band one-pole two-throw switch were also demonstrated. has over 50 dB dynamic at 2 maximum minimum insertion loss is 1.7 per stage flat response 10 GHz. 0.82 off-isolation 25 dB. greater than 35% the 34.5 These consist diodes...

A 0.2um T-gate GaN-SiC HEMT technology with fT 70 GHz are used to achieve GaN Darlington MMIC Amplifiers bandwidths up 18 GHz. Both conventional and Cascoded-Darlington feedback designs were fabricated measured. The Cascode obtains 14.7 dB gain a bandwidth of 0.05-12.3 11 record 0.05-18.7 multi-decade for Darlington. These the highest BWs reported amplifiers. In addition, P1dB 1 Watt > 40 dBm OIP3 was obtained beyond 4 To our knowledge, these results represent widest so far demonstrated...

This paper reports on a GaAs PIN diode SPDT switch design which achieves 45 dB of isolation up to 30 GHz. The uses 2-μm-thick i-region PIN's, shunt-shunt-series topology in each arm, and quasi-coplanar waveguide (CPW) environment achieve its superior performance. By employing CPW ground with microstrip design, as much 10-dB improvement performance was observed at the upper band frequencies. 1.02-dB insertion loss >15-dB input output return-loss across band. In comparison previously reported...

We report on a GaAs HBT 3-stage variable gain amplifier operating over 0.75-5 GHz frequency band. The is broken up into single-ended LNA pre-amplifier, an analog current steering differential cascode cell for control, and output stage. broadband pre-amplifier required to reduce the inherently noisy stage, used provide drive capability conversion. VGA has maximum of 23.8 dB gain, IP3>18 dBm, noise figure 6.5 dB. control range >35 This chip demonstrates versatility IC technology which can...

This paper reports on a dc-20-GHz InP heterojunction bipolar transistor (HBT) active mixer, which obtains the highest gain-bandwidth product (GBP) thus far reported for direct-coupled analog mixer integrated circuit (IC). The HBT is based Gilbert transconductance multiplier cell and integrates RF, local oscillator, IF amplifiers, High-speed 70-GHz f/sub T/ 160-GHz max/ devices along with microwave matching accounts its record performance. Operated as down-converter monolithic achieves an RF...

The effects of neutron irradiation on 3- mu m-emitter, self-aligned-base, ohmic metal GaAs/AlGaAs heterojunction bipolar transistors and ICs based molecular beam epitaxy have been experimentally analytically investigated at fluence levels up to 1.3*10/sup 14/ n/cm/sup 2/. Devices with high DC current gain, beta , exhibited higher sensitivity than those low . At 2/, was degraded by 25% for high- devices 7% low- devices. Parasitic base components such as the emitter edge recombination seem be...

This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves sub-0.2 dB noise figure (NF) over multi-octave band and saturated output (Psat) of 2 W at cool temperature -30degC . The GaN MMIC is based 0.2 mum AlGaN/GaN-SiC HEMT technology with an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ~ 75 GHz. At bias 15 V-400 mA, the 0.25-0.45 average NF 2-8 GHz linear P...

The 5-GHz quadrature couplers implemented in GaAs and silicon-based integrated passive device (IPD) technologies are presented. Although technology is superior to terms of substrate resistivity back-side vias, the coupler using a silicon IPD process achieved better insertion loss due thick metal traces comparable resistivity. While employed 4-μm-thick traces, 10.8-μm-thick realized with via connections between top 5.3-μm thickness bottom 5.5-μm thickness. showed 0.15 0.27 dB loss,...

An AlGaAs-GaAs HBT wideband low noise amplifier has been achieved using a direct-coupled topology. A nominal gain of 22.5 dB and figure 3.0-3.65 over DC-10 GHz band, while consuming less than 55 mW DC power through 5 V supply. This result benchmarks the lowest so far reported for at X-band frequencies. In addition, an approximate expression is given that predicts to within 0.3 bias frequency. The can be compacted into 0.3/spl times/0.3 mm/sup 2/ area yield as many 30000 die per 3-in GaAs...