A5100455996- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Energy Load and Power Forecasting
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Electric Power System Optimization
- Luminescence Properties of Advanced Materials
- Power Systems and Renewable Energy
- GaN-based semiconductor devices and materials
- Conducting polymers and applications
- Acoustic Wave Resonator Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Quantum Dots Synthesis And Properties
- Electronic and Structural Properties of Oxides
- Machine Learning and ELM
- Microwave Dielectric Ceramics Synthesis
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Glass properties and applications
- High-Voltage Power Transmission Systems
Guangdong University of Technology
2017-2025
Chongqing Normal University
2022-2024
Sun Yat-sen University
2018-2022
Fujian Institute of Research on the Structure of Matter
2016
Chinese Academy of Sciences
2016
University of Chinese Academy of Sciences
2016
Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV high-sensitivity low-noise "sandwich" photodetector with large detective area is difficult to be fabricated because it usually hard traditional wide band gap semiconductors boast both high conductivity transparency. Here, we proposed use graphene as transparent conductive layer form graphene/β-Ga2O3 heterojunction. With...
Abstract A new strategy of constructing an additional heterojunction on the surface epitaxially grown Ga 2 O 3 film with a distorted lattice is proposed to solve problem low external quantum efficiency (EQE) in traditional photovoltaic devices. Experimentally, organic–inorganic hybrid poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate/Ga /p‐type Si solar‐blind ultraviolet (SBUV) detector constructed achieve ultrahigh EQE ≈15% at 0 V bias, which 1–2 orders magnitude higher than that...
Abstract Vacuum‐ultraviolet (VUV) photodetection is effective in probing the evolution and eruption of solar storms which are destructive to power transmission communication systems. To realize real‐time monitoring storms, astro‐ physicists dedicated developing zero‐energy‐consumption VUV photovoltaic devices with high sensitivity. However, due lack transparent electrodes high‐quality photosensitive materials, desired rapid temporal response rarely reported. Here, graphene used as electrode,...
Graphene (Gr) has been widely used as a transparent electrode material for photodetectors because of its high conductivity and transmittance in recent years. However, the current low-efficiency manipulation Gr hindered arraying practical use such detectors. We invented multistep method accurately tailoring graphene into interdigital electrodes fabricating sensitive, stable deep-ultraviolet photodetector based on Zn-doped Ga2O3 films. The fabricated exhibits series excellent performance,...
A high performance photovoltaic DUV photodetector was designed based on the dual-field coupling effect (pyro-phototronic and coupled with effect), further elucidated enhanced mechanism.
In this work, a strategy of constructing back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt thickness 4 nm ZnGa2O4/Si heterojunction, successfully constructed. Based on that, Pt/ZnGa2O4/p-Si DUV detector low dark current density (∼9.6 × 10-5 μA/cm2), large photo-to-dark ratio (PDCR, >105), and fast response speed (decay time <50 ms) fabricated. At 0 V bias, device displays...
Pulsed power systems require high-performance capacitors with high energy storage density. In this work, (1 − x)BaTiO3-xBi(Mg1/2Sn1/2)O3 ferroelectric ceramics were synthesized in a solid-state solution. The sample of x = 0.12 (0.88BT-0.12BMS) has excellent density, wide temperature, and frequency stability. density 4.87 J/cm3 at 315 kV/cm the efficiency 72% room temperature for 0.88BT-0.12BMS achieved. Furthermore, demonstrated well stabilities range 20–100 °C very good stability 1–100 Hz....
The research found that after doping with rare earth elements, a large number of electrons and holes will be produced on the surface AlN, which makes material have characteristics spontaneous polarization.
Traditional optical communication systems rely on single narrow-band PDs, which can expose confidential information and data to potential eavesdropping in free space. With advancements technology, even the UV spectrum, invisible sun, faces risks of interception. Consequently, broad-band PDs that combine encryption with algorithmic hold significant promise for secure reliable communication. This study presents a photodetector based TiO2–α-Ga2O3 heterostructures, prepared via direct oxidation...
Abstract New ultrawide‐bandgap (>6.0 eV) photosensitive materials are in urgent need to meet the requirements of vacuum‐ultraviolet (VUV) photodetection applied deep space exploration. Here, a nonequilibrium growth method is reported fabricate amorphous MgGaO (a‐MgGaO) films with an ultrawide bandgap 6.0 eV and ultrashort absorption edge 206 nm by alloying MgO Ga 2 O 3 . By combining as‐grown p‐type graphene (p‐Gr) which serves as transparent conductor, photovoltaic detector...
A strategy of adopting Ga2O3 alloyed with Al element to reduce the oxygen vacancy defect density and enhance interface barrier height heterojunction is proposed fabricate deep-UV photovoltaic detectors high thermal stability, photoresponsivity, fast response speed. Here, a graphene/(AlGa)2O3/GaN device photoresponsivity ∼20 mA/W, rise time ∼2 μs, decay ∼10 ms presented at 0 V bias. At working temperature 453 K, still exhibits photo-to-dark current ratio (PDCR) ∼1.8 × 103, which 1–2 orders...
Lutetium oxide (Lu2O3), an ultrawide semiconductor with intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films 5.6 eV are grown on GaN substrates through sputtering target, based which graphene/Lu2O3/GaN DUV photovoltaic detector is constructed its photoelectric being systematically studied. According to our research, under 0 V bias and 185 nm irradiation, this device shows high...
It is crucial to realize high photoresponsivity and a fast response speed meet the application requirements of solar blind ultraviolet (SBUV) photodetectors (PDs) in wireless communication, fire warning, other fields. Such high-performance PDs depend on high-quality films. In this paper, nonequilibrium MOCVD growth scheme reported obtain Mg-alloyed Ga2O3 films with single crystal orientation. On basis film, fabricated PD exhibits large on/off ratio approximately 105 (I254 nm light/Idark),...
In this work, a modified solution technique for synthesizing Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> films is presented, which aims at fabricate high performance deep-ultraviolet (DUV) photovoltaic photodetectors (PDs). Through selection of low boiling point organic solvent and temperature heat treatment 800 °C, the growth process optimized, with single-crystal-oriented...
Ultraviolet (UV) photodetectors have received widespread attention in fields, such as corona inspection, flame detection, and UV communication. In this work, a high-performance PEDOT:PSS/Lu0.27Sn0.73O/ZnO detector prepared on Lu0.27Sn0.73O films (bandgap ~4.9 eV) is obtained through alloy engineering. At 0-V bias, the device sensitive to wide range (230–400 nm, which covers UVA, UVB, UVC bands) illumination exhibits rapid response of ~90.7 ms. As compared with performance...
A deep UV transparent Al:Mg0.43Zn0.57O (AMZO) film with high electrical conductivity (406.6 S cm−1) and light transmittance is prepared via a designed two-step method controlling the thermodynamic process of doping. The proposed here can provide reference for production luminescent materials. As service to our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed may be re-organized online delivery, but not copy-edited or typeset....