A5015853084- Ga2O3 and related materials
- ZnO doping and properties
- Perovskite Materials and Applications
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Electrochemical Analysis and Applications
- Gas Sensing Nanomaterials and Sensors
- Magnetic and transport properties of perovskites and related materials
- Magnetic Properties of Alloys
- Advanced Text Analysis Techniques
- Mathematics, Computing, and Information Processing
- Nanowire Synthesis and Applications
- Energy Load and Power Forecasting
- Boron and Carbon Nanomaterials Research
- Semiconductor materials and devices
- Heat transfer and supercritical fluids
- Thermal Radiation and Cooling Technologies
- Luminescence Properties of Advanced Materials
- Power Systems and Renewable Energy
- Machine Learning in Materials Science
- Electrocatalysts for Energy Conversion
- Biomedical Text Mining and Ontologies
- Rare-earth and actinide compounds
- Shape Memory Alloy Transformations
- MXene and MAX Phase Materials
Jinzhou Medical University
2024
Central South University
2024
Sun Yat-sen University
2018-2022
Shanghai University
2018-2019
Xi'an Jiaotong University
2013
Abstract A new strategy of constructing an additional heterojunction on the surface epitaxially grown Ga 2 O 3 film with a distorted lattice is proposed to solve problem low external quantum efficiency (EQE) in traditional photovoltaic devices. Experimentally, organic–inorganic hybrid poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate/Ga /p‐type Si solar‐blind ultraviolet (SBUV) detector constructed achieve ultrahigh EQE ≈15% at 0 V bias, which 1–2 orders magnitude higher than that...
Graphene (Gr) has been widely used as a transparent electrode material for photodetectors because of its high conductivity and transmittance in recent years. However, the current low-efficiency manipulation Gr hindered arraying practical use such detectors. We invented multistep method accurately tailoring graphene into interdigital electrodes fabricating sensitive, stable deep-ultraviolet photodetector based on Zn-doped Ga2O3 films. The fabricated exhibits series excellent performance,...
Abstract For a practical photodetector, fast switching speed and high on-off ratio are essential, more importantly, the integration capability of device finally determines its application level. In this work, judiciously engineered Si 3 N 4 /Si detector with an open-circuit voltage 0.41 V is fabricated by chemical vapor deposition methods, exhibits good performance repeatability. The advanced technology foundation for imaging functions in near future. Compare to current commercial p-i-n...
Large Language Models (LLMs) have achieved remarkable success and been applied across various scientific fields, including chemistry. However, many chemical tasks require the processing of visual information, which cannot be successfully handled by existing LLMs. This brings a growing need for models capable integrating multimodal information in domain. In this paper, we introduce ChemVLM, an open-source large language model specifically designed applications. ChemVLM is trained on carefully...
Boron nitride (BN) has attracted substantial attention in the fields of vacuum-ultraviolet (VUV) photodetection owing to its ultra-wide bandgap and high optical absorption coefficient. However, practical application, boron crystals cannot satisfy current requirements size quality. In this work, we prepared an amorphous sp2 bonding BN film by magnetron sputtering with as growth source at a low temperature (500 °C). No harsh conditions pressure are required, but purity uniformity can be...
Vacuum-ultraviolet (VUV) detector equipped on satellites has extensive application in space exploration and cosmic science. For a VUV detector, semiconductor material with sufficiently wide band gap is eagerly desired. In this work, wide-band amorphous-MgGaO (a-MGO) film was epitaxially grown n-type GaN substrate by atomic layer deposition p-i-n-type heterojunction device for detection constructed a-MGO as photosensitive p-type graphene transparent conductive layer. The exhibits good...
It is crucial to realize high photoresponsivity and a fast response speed meet the application requirements of solar blind ultraviolet (SBUV) photodetectors (PDs) in wireless communication, fire warning, other fields. Such high-performance PDs depend on high-quality films. In this paper, nonequilibrium MOCVD growth scheme reported obtain Mg-alloyed Ga2O3 films with single crystal orientation. On basis film, fabricated PD exhibits large on/off ratio approximately 105 (I254 nm light/Idark),...
This paper introduces the MCT Self-Refine (MCTSr) algorithm, an innovative integration of Large Language Models (LLMs) with Monte Carlo Tree Search (MCTS), designed to enhance performance in complex mathematical reasoning tasks. Addressing challenges accuracy and reliability LLMs, particularly strategic reasoning, MCTSr leverages systematic exploration heuristic self-refine mechanisms improve decision-making frameworks within LLMs. The algorithm constructs a search tree through iterative...
In-plane enhanced epitaxy provides reference for the preparation of high-quality AlN and development VUV photodetectors..
Ultrawide band gap oxides have attracted attention for deep-ultraviolet (DUV) imaging detection which possesses a wide range of applications in space science, secure communication, and biological research. Here, we fabricated large-scale ultrathin polycrystalline oxide with DUV-sensitivity by brushing liquid metal recrystallization. On the basis such oxides, linear-array photodetector is fabricated, thus realizing real-time DUV light spots. Single-pixel detectors show high responsivity (1.75...
In this letter, we successfully prepared tunable bandgap ZrGaO films on n-GaN substrates by RF magnetron sputtering. with different Zr contents were target sputtered various powers and Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> an power of 100 W. The film deposited a sputtering 70 W was broadened to 5.4 eV, indicating that can be promising candidate enlarge the . Based film,...
Large Language Models (LLMs) have achieved remarkable success and been applied across various scientific fields, including chemistry. However, many chemical tasks require the processing of visual information, which cannot be successfully handled by existing LLMs. This brings a growing need for models capable integrating multimodal information in domain. In this paper, we introduce \textbf{ChemVLM}, an open-source large language model specifically designed applications. ChemVLM is trained on...
In this letter, amorphous silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) film grown by inductively coupled plasma chemical vapor deposition (ICPCVD) method is used as the photosensitive layer of deep ultraviolet (DUV) detection, whose thickness and roughness are 200 nm 0.92 nm, respectively. The transverse symmetrical photoconductive detector with interdigital...
An urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult achieve growth mechanism BP is still unclear, there few reports basic properties pure isotope BP, resulting narrow understanding their special physical properties....
The occupation mechanism and magnetic transition behavior of trace Zn P alloying in the sub-rapidly solidified LaFe11.6Si1.4 magnetocaloric plates were investigated. LaFe11.6Si1.4, LaFe11.6Si1.4Zn0.03, LaFe11.6Si1.4P0.03 fabricated using centrifugal casting method present work. Experimental results showed that both elements distributed La5Si3 LaFeSi phases during sub-rapid solidification. After annealed at 1373 K for 72 h, plate underwent a second-order transition, while LaFe11.6Si1.4Zn0.03...
Hexagonal boron nitride crystalline film with a thickness of 70 μm is deposited on c-plane sapphire at 1700 °C by the chemical vapor deposition (CVD) method. In X-ray diffraction (XRD) characterizations, peak (002) observed 26.01° full width half-maximum (FWHM) 1.17°, and c-axis lattice constant estimated to be 6.84 Å. The characterization results Raman photoelectron spectroscopy further confirm film's high quality. Based h-BN film, vacuum ultraviolet (VUV) photodetector fabricated...