A5014177753- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Copper Interconnects and Reliability
- GaN-based semiconductor devices and materials
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Boron and Carbon Nanomaterials Research
- nanoparticles nucleation surface interactions
- Advanced materials and composites
- High-Temperature Coating Behaviors
- High Entropy Alloys Studies
- Advanced Materials Characterization Techniques
- Surface and Thin Film Phenomena
- Intermetallics and Advanced Alloy Properties
- Metallic Glasses and Amorphous Alloys
- ZnO doping and properties
- Magnetic properties of thin films
- Fusion materials and technologies
- Optical Coatings and Gratings
- TiO2 Photocatalysis and Solar Cells
- Advanced ceramic materials synthesis
- MXene and MAX Phase Materials
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
Université de Poitiers
2015-2024
Centre National de la Recherche Scientifique
2015-2024
Institut Pprime
2015-2024
École Nationale Supérieure de Mécanique et d'Aérotechnique
2014-2024
Laboratoire de Physique Théorique de la Matière Condensée
2023
Aristotle University of Thessaloniki
2022
Helsinki Institute of Physics
2022
University of Helsinki
2022
University of Stavanger
2020
Sumy State University
2014
The issue of stress in thin films and functional coatings is a persistent problem materials science technology that has congregated many efforts, both from experimental fundamental points view, to get better understanding on how deal with, tailor, manage areas applications. With the miniaturization device components, quest for increasingly complex film architectures multiphase systems continuous demands enhanced performance, there need toward reliable assessment submicron scale spatially...
The nitrides of most the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN, MoN, WN) constitute unique category conductive ceramics. Having substantial electronic conductivity, exceptionally high melting points and covering a wide range work function values, they were considered for variety applications, which include diffusion barriers in metallizations integrated circuits, Ohmic contacts on compound semiconductors, thin film resistors, since early eighties. Among them, TiN...
To clarify the underlying mechanisms that cause preferred orientation in TiN films, we investigated evolution with thickness of texture, surface morphology, and residual stress thin films deposited by dual ion beam sputtering. The h ranging from 50to300nm, were grown on oxidized Si substrates using a primary Ar accelerated under 1.2kV different voltages Va (Ar+N2) assistance beam: 25, 50, 150V. influence temperature was also varying substrate Ts (25–300°C) during growth or performing...
Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar–N2 plasma discharges at °C on Si substrates. Two systems comparatively studied, Ti–Zr–N and Ti–Ta–N, as representative of isostructural nonisostructural prototypes, the aim characterizing their structural, mechanical, electrical properties. While phase-separated TiN–ZrN TiN–TaN are bulk equilibrium states, Ti1−xZrxN Ti1−yTayN solid solutions Na–Cl (B1-type)...
We present evidence for compressive stress generation via atom insertion into grain boundaries in polycrystalline Mo thin films deposited using energetic vapor fluxes (<∼120 eV). Intrinsic magnitudes between −3 and +0.2 GPa are obtained with a nearly constant stress-free lattice parameter marginally larger (0.12%) than that of bulk Mo. This, together correlation large film stresses high densities, implies the is not caused by defect creation grains but boundary densification. Two...
We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical considers sub-surface point defects created by atomic peening, along with processes treated already existing models non-energetic deposition, i.e., thermally activated diffusion at the surface and grain boundary. According to model, ballistically induced can get incorporated as excess atoms boundary, remain trapped...
Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged a category of promising alternative plasmonic materials. In this work, we show that ternary nitrides TixTa1−xN, TixZr1−xN, TixAl1−xN, ZrxTa1−xN share the important features with their counterparts, while having additional asset exceptional spectral tunability in entire visible (400–700 nm) UVA (315–400 ranges depending on net valence electrons. particular, demonstrate can exhibit maximum field enhancement factors...
Nanostructured columnar titanium nitride (TiN) thin films were produced by oblique angle deposition using reactive magnetron sputtering. The influence of the angular distribution incoming particle flux on resulting film morphology (column tilt angle, porosity, surface roughness) was studied varying inclination α substrate at two different working pressures, 0.3 and 0.5 Pa. microstructural features columns angles βexp determined experimentally compared to those simulated from kinetic Monte...
Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence stress gradients is revealed, as the result two kinetically competing generation mechanisms: atomic peening effect, inducing compressive stress, void formation, leading to a tensile regime predominant at higher film thickness. No relaxation detected growth interrupt in both regimes. A change from evidenced with increasing thickness, Ti...
Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality performance film devices. The origin compressive typically observed during deposition polycrystalline metal at conditions that result high atomic mobility has under debate the literature course past decades. In this study, we contribute towards resolving by investigating grain size dependence stress magnitude dense Mo grown...
The Volmer-Weber growth of high-mobility metal films is associated with the development a complex compressive-tensile-compressive stress behavior as film deposition proceeds through nucleation islands, coalescence, and formation continuous layer. tensile force maximum has been attributed to end islands coalescence stage, based on ex situ morphological observations. However, microstructural rearrangements are likely occur in such during post-deposition, somewhat biasing interpretations solely...
The structure, phase stability, and mechanical properties of ternary alloys the Zr-Ta-N system are investigated by combining thin-film growth ab initio calculations. ${\mathrm{Zr}}_{1\ensuremath{-}x}{\mathrm{Ta}}_{x}\mathrm{N}$ films with $0\ensuremath{\le}x\ensuremath{\le}1$ were deposited reactive magnetron cosputtering in $\mathrm{Ar}+{\mathrm{N}}_{2}$ plasma discharge their structural characterized x-ray diffraction. We considered both ordered disordered alloys, using supercells special...