Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome drawbacks palsmonic metals due to its high electron conductivity and mobility, melting point compatibility growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review dielectric function spectra evaluate plasmonic performance by calculating (i) Surface Plasmon Polariton (SPP) dispersion relations (ii) Localized Resonance (LSPR) band nanoparticles,...

The nitrides of most the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN, MoN, WN) constitute unique category conductive ceramics. Having substantial electronic conductivity, exceptionally high melting points and covering a wide range work function values, they were considered for variety applications, which include diffusion barriers in metallizations integrated circuits, Ohmic contacts on compound semiconductors, thin film resistors, since early eighties. Among them, TiN...

A ternary organic semiconducting blend composed of a small-molecule, conjugated polymer, and molecular p-dopant is developed used in solution-processed transistors with hole mobility exceeding 13 cm2 V−1 s−1 (see the Figure). It shown that key to this development incorporation formation vertically phase-separated film microstructure. As service our authors readers, journal provides supporting information supplied by authors. Such materials are peer reviewed may be re-organized for online...

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector large-area electronics. However, further advancement technology is hindered by limitations associated with extrinsic electron transport properties often defect-prone oxides. We overcome this limitation replacing single-layer semiconductor channel a low-dimensional, solution-grown In2O3/ZnO heterojunction. find that exhibit band-like transport, mobility values...

We investigate the electronic properties of nanocrystalline cerium oxide $({\mathrm{CeO}}_{x})$ films, grown by various techniques, and we establish universal relations between them film structure, composition, morphology. The ${\mathrm{CeO}}_{x}$ films mainly consist ${\mathrm{CeO}}_{2}$ grains, while a considerable concentration trivalent ${\mathrm{Ce}}^{3+}$ is distributed at grain boundaries forming amorphous ${\mathrm{Ce}}_{2}{\mathrm{O}}_{3}.$ A small portion also located around...

Spectroscopic ellipsometry (SE) was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiNx) films with respect their microstructure stoichiometry. The films’ can be tailored by varying energy bombarding ions during sputter deposition substrate temperature (Td). best metallic behavior TiNx (resistivity 40 μΩ cm conduction density 5.5×1022 electrons/cm3) has been observed in developed above 100 eV Td⩾400 °C. A redshift optical...

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for development advanced thin-film transistors and their application in emerging sector printed electronics. Here, a simple method reported enhancing hole wide range semiconductors, including small-molecules, polymers, small-molecule:polymer blends, with latter systems exhibiting highest mobility. The relies on admixing molecular Lewis acid B(C6F5)3 semiconductor formulation prior to solution...

Abstract Over the past few decades, significant progress has been made in field of photonic processing electronic materials using a variety light sources. Several these technologies have now exploited conjunction with emerging as alternatives to conventional high‐temperature thermal annealing, offering rapid manufacturing times and compatibility temperature‐sensitive substrate among other potential advantages. Herein, recent advances paradigms metal‐oxide thin‐film transistors (TFTs) are...

Ceria is a transparent oxide suitable for various optical and optoelectronic devices. In this work, we tailor independently the refractive index n fundamental gap Eg of nanocrystalline films by varying substrate temperature or using Ar+ ion beams during growth with electron beam evaporation. Spectroscopic ellipsometry x-ray reflectivity are employed to study identify physical parameters that affect them. We correlate (varies from 1.65 2.15 in studied films) film density through universal,...

We present a thorough study of the microstructure, texture, intrinsic stress, surface, and interface morphology transition metal nitride (mainly TiN but also CrN) films grown on Si by reactive sputter deposition, with emphasis to mechanisms adatom migration surface subplantation energetic species. In order effects mobility probability we vary ion energy growth temperature. For experimental part this work used nondestructive, statistically reliable x-ray techniques (diffraction, reflectivity,...

A novel two-step approach for preparing carbon nanotube (CNT) systems, exhibiting an extraordinary combination of functional properties, is presented. It based upon nanocomposite films consisting metal (Me = Ni, Fe, Mo, Sn) nanoparticles embedded into diamond-like (DLC). The main concept behind this that DLC inhibits the growth Me, resulting in formation small nanospheres instead layers or extended grains. In second step, DLC:Me substrates were used as catalyst templates CNTs by thermal...

The use of ultrasonic spray pyrolysis is demonstrated for the growth polycrystalline, highly uniform indium oxide films at temperatures in range 200-300 °C air using an aqueous In(NO3)3 precursor solution. Electrical characterization as-deposited by field-effect measurements reveals a strong dependence electron mobility on deposition temperature. Transistors fabricated ∼250 exhibit optimum performance with maximum values 15-20 cm(2) V (-1) s(-1) and current on/off ratio excess 10(6)....

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value ∼5.5% which is equivalent to that obtained for control based on commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate HTL. Inverted with >3% were also demonstrated metal oxide electron layers, CuI HTL evaporated...

Abstract The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier‐selective interlayers in large area opto/electronics. Herein simple, economical, and effective p‐doping one most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C 60 F 48 reported. Theoretical calculations combined with experimental measurements are used elucidate band structure density states constituent materials...

Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged a category of promising alternative plasmonic materials. In this work, we show that ternary nitrides TixTa1−xN, TixZr1−xN, TixAl1−xN, ZrxTa1−xN share the important features with their counterparts, while having additional asset exceptional spectral tunability in entire visible (400–700 nm) UVA (315–400 ranges depending on net valence electrons. particular, demonstrate can exhibit maximum field enhancement factors...

We report on thin-film transistors based Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the devices were investigated using a range complementary characterisation techniques, whilst effects post deposition annealing higher temperature (700 °C) also investigated. Both as-grown post-deposition annealed are found to be slightly oxygen deficient, exceptionally smooth...

Titanium nitride (TiNx) thin films, ∼100 nm thick, were deposited on Si(100) substrates by dc reactive magnetron sputtering. The effects of the substrate bias voltage and deposition temperature their optical, electrical, mechanical properties have been studied. It was found a strong correlation between electrical films which are significantly improved with increasing temperature. low resistivity (43 μΩ cm), combined high hardness elastic modulus values, suggest TiNx as promising...

Spectroscopic ellipsometry (SE) is employed to study the evolution of microstructure, stoichiometry, and electron-transport properties titanium nitride (TiN) heterostructures grown on Si gallium (GaN) by reactive magnetron sputtering. In order achieve subnanometer resolution for SE analysis, we developed validated appropriate methods interpreting optical data. Thus, used (a) effective medium theories describing in terms their constituent materials (Si, GaN, TiN, over-stoichiometric TiNx,...

The combination of electrical conductivity, chemical and metallurgical stability, refractory character, having lattice constants that are close to those III-nitrides makes transition metal nitrides promising candidates for electronics device applications. We study the structure, plasma energy stoichiometric, similar crystal quality as well widest variety their ternaries ever reported. establish phase spaces (6.9–10.5 eV) work function (3.7–5.1 these complex with constant (0.416–0.469 nm) we...

Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 16 for architectures, respectively. Integration In2O3 transistors enabled realization unipolar inverters high gain (5.3 V/V) low-voltage operation. The low temperature deposition (≤250 °C) also allowed transistor fabrication on...