Following the previous achievement of highly crystalline α-Ga 2 O 3 thin films on c -plane sapphire, growth corundum-structured α-(Al x Ga 1- ) was examined aiming at future application /Ga heterostructures to power devices and other functional devices. The results show control band gap up 0.81 7.8 eV, respectively, maintaining dominant corundum structure. transmission electron microscope observation suggested formation crystallographically good interface without severe generation threading...

Corundum-structured α-Ga 2 O 3 epitaxial thin films were grown on c -plane α-Al (sapphire) substrates by a mist chemical vapor deposition method. To reveal the defect structures, film was observed high-resolution transmission electron microscopy (TEM). We found that in-plane compressive stressed from substrate. Although misfit dislocations periodically generated at /α-Al interface owing to large lattice mismatches between and , 3.54% ( -axis) 4.81% -axis), most of did not thread through...

We have clarified a physical guideline for controlling thermoelectric properties of conducting polymers by continuous doping.

The pressure phase diagram of κ-(BEDT-TTF) 2 Cu[N(CN) ]Cl is determined by measuring the intralayer and interlayer resistivities. With increase pressure, nonmetallic behavior resistivity suppressed a metallic stabilized, yielding reentrance near critical region. Concurrently, an incomplete superconductivity appearing at ambient becomes to show complete giving zero resistance when sheet comparable h /4 e application indicating that localized in lower effect deuteration BEDT-TTF molecule on...

The fabrication of heterostructures from low-dimensional materials is very challenging, particularly the creation heterojunctions that can be characterized at an atomic resolution. In a previous work, two-dimensional (2D) heterostructure made halogen-bridged metal complexes (MX-Chains), [Ni(chxn)2Br]Br2 (chxn = 1R,2R-diaminocyclohexane) and [Pd(chxn)2Br]Br2, has been synthesized, nature electronically 1D heterojunction resolution was revealed. work reported here, we have successfully...

The temperature dependence of the electrical conductivity and low-temperature magnetoresistance for iodine-doped highly conducting polyacetylenes are reported. overall behavior is explained in terms phenomenological Sheng model, but selection parameter values not unique, suggesting that model sufficient to characterize samples. changes rather drastically with conductivity, which determined by doping concentration chemical reactions within (CH${)}_{\mathit{x}}$. magnetic-field effect...

The Ginzburg-Landau coherence lengths are determined from the temperature dependence of magnetization by fitting measured results with renormalization theory fluctuation developed for layered superconductors. derived interlayer 6±2 Å and 3.2±0.5 κ-(BEDT-TTF) 2 Cu[N(CN) ]Br Cu(NCS) , respectively, which remarkably shorter than spacing. It is also found that these virtually unaffected isotope substitution in BEDT-TTF molecules.

Single-molecule magnets exhibit magnetic bistabililties at the molecular level, making them promising for molecule-based spintronics due to high densities. The incorporation of SMM behavior and electrical conductivity in one compound is rare because these two physical properties often do not operate same temperature range, which further hinders their use practical applications. Here we present an organic–inorganic hybrid, β″-(BEDO-TTF)3[Co(pdms)2]·(MeCN)(H2O)2 (BO3) (BEDO-TTF =...

We report electron spin resonance (ESR) studies on field-induced charge carriers in regioregular poly(3-hexylthiophene) (RR-P3HT) and poly(3-octylthiophene) (RR-P3OT) for metal–insulator–semiconductor (MIS) diode structures with Al 2 O 3 as an insulating layer. The ESR signals ( g ∼2.002) were clearly observed; their intensities monotonically increased the absolute value of gate bias accumulation mode a saturation behavior at higher voltages. consistent those photogenerated positive polarons...

Abstract Fully interactive : Overlap between extended unoccupied molecular orbitals leads to the high photoconductivity of radical dimers. Sandwich‐type cells (see picture; ITO=indium tin oxide) comprising highly oriented thin films a disjoint diradical, 4,4′‐bis(1,2,3,5‐dithiadiazolyl) (BDTDA) exhibit photocurrent with on/off ratio at reverse bias voltages and photovoltaic behavior zero voltage. magnified image

We propose the material design for a quantum spin liquid next to superconducting state based on dimer-type ET Mott insulator.

Charge carrier concentration in operating field-effect transistor (FET) of regioregular poly(3-hexylthiophene) has been directly determined by electron spin resonance (ESR). ESR signals field-induced polarons are observed around g=2.003 under the application negative gate-source voltage (Vgs). Upon applying drain-source (Vds), intensity decreases linearly low Vds region, reaching to about 50% initial at pinch-off point (Vds≅Vgs). For larger absolute values Vds, it becomes nearly independent....

Abstract (‐201)‐oriented beta gallium oxide (β‐Ga 2 O 3 ) thin films were grown on yttrium‐stabilized zirconia (YSZ) substrates using a mist chemical vapor deposition (CVD) method. The lowest full‐width at half maximum value in ω‐scan X‐ray diffraction was 0.50°, obtained for the growth temperature of 650 °C YSZ(100) substrate. Observation by secondary electron microscope (SEM) revealed flat surface including large‐scale precipitates. Electron patterns suggested that basically possess β‐type...

The first three-dimensional (3D) conductive single-ion magnet (SIM), (TTF)2 [Co(pdms)2 ] (TTF=tetrathiafulvalene and H2 pdms=1,2-bis(methanesulfonamido)benzene), was electrochemically synthesised investigated structurally, physically, theoretically. similar oxidation potentials of neutral TTF the molecular precursor [HNEt3 ]2 [M(pdms)2 (M=Co, Zn) allow for multiple charge transfers (CTs) between SIM donor ]n- TTF.+ acceptor, as well an intradonor CT from pdms ligand to Co ion upon...

Electron spin resonance (ESR) measurements are performed on field-induced charge carriers in high-mobility organic transistors of polycrystalline dioctylbenzothieno[2,3-b]benzothiophene (C${}_{8}$-BTBT) films. The angular dependences the ESR spectra well fitted by orthorhombic $g$ values with largest component ${g}_{Y}$ $=$ 2.0110 nearly parallel to normal direction substrate but tilted 5\ifmmode^\circ\else\textdegree\fi{}. results indicate a highly organized end-on alignment C${}_{8}$-BTBT...

Electronic state of charge carriers, in particular, highly doped regions, thin-film transistors a semicrystalline conducting polymer poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene), has been studied by using field-induced electron spin resonance (ESR) spectroscopy. By adopting an ionic-liquid gate insulator, gate-controlled reversible electrochemical hole-doping the backbone is achieved, as confirmed from change optical absorption spectra. The edge-on molecular orientation...

Critical behaviors indicating an insulator–metal (IM) transition are observed in poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) [PBTTT] ionic-liquid-gated transistors. At room temperature, a maximum channel conductivity of 300 S cm−1 is achieved at the doping concentration 1021 cm−3. The shows very weak temperature dependence; 5 K only 1.6 times lower than that 250 K. signature IM low temperatures evidenced by results Zabrodskii plot analysis. benefitted semicrystalline...

Application of a high magnetic field to the pressure-stabilized superconducting state appearing below T c1 in κ-(BEDT-TTF) 2 Cu[N(CN) ]Cl enhances/induces resistive ground c2 (< ). The resistivity field-induced phase is insensitive temperature variation. transition also characterized by marked versus hysteresis and pronounced long-time dependence.

The electrical conduction of regioregular poly(3-hexylthiophene) (RR-P3HT) and regiorandom (RRa-P3HT) doped with iodine is studied as a function doping level. conductivity shows the thermally-activated behavior at low levels below 10% for RR-P3HT 18% RRa-P3HT. At high higher than 20% RRa-P3HT, three-dimensional variable-range hopping. change in mechanism explained qualitatively terms growth density states Fermi level dimensional crossover path. difference where occurs RRa-P3HT understood...