A5072052341- Magnetic and transport properties of perovskites and related materials
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Condensed Matter Physics
- Multiferroics and related materials
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Rare-earth and actinide compounds
- MXene and MAX Phase Materials
- Graphene research and applications
- Advanced Semiconductor Detectors and Materials
- Silicon and Solar Cell Technologies
- Solid-state spectroscopy and crystallography
- Seismic Waves and Analysis
- Thermography and Photoacoustic Techniques
- Iron-based superconductors research
- Innovative Energy Harvesting Technologies
- Ferroelectric and Negative Capacitance Devices
- Underwater Acoustics Research
- Advanced Thermoelectric Materials and Devices
- Advanced Sensor and Energy Harvesting Materials
Huazhong University of Science and Technology
2009-2024
Wuhan National Laboratory for Optoelectronics
2022-2023
Abstract Solution‐processed PbS colloidal quantum dots (CQDs) are promising optoelectronic materials for next‐generation infrared imagers due to their monolithic integratability with silicon readout circuit and tunable bandgap controlled by CQDs size. However, large‐size (diameter >4 nm) longer shortwave‐infrared photodetection consist mainly of {100} facets incomplete surface passivation unsatisfied stability. Here, it is reported that perovskite‐bridged CQDs, in which the epitaxially...
Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave cameras such as InGaAs have disadvantage complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost low imaging resolution. Herein, a low-cost, high-performance, high-stability Tex Se1-x photodiode detector is reported. The thin film fabricated through...
Infrared solar cells are regarded as candidates for expanding the spectrum of c-Si cells, and window electrodes usually transparent conductive oxide (TCO) such widely used indium tin material. However, due to low transmittance TCO in near-infrared region, most light cannot penetrate electrode be absorbed by active layer. Here, propose a simple procedure fabricate materials with high electrical conductivity, namely hydrogen-doped (IHO) films prepared room temperature magnetron sputtering. The...
Indium tin oxide (ITO) is widely used in a variety of optoelectronic devices, occupying huge market share $1.7 billion. However, traditional preparation methods such as magnetron sputtering limit the further development ITO terms high temperature (>350 °C) and low mobility (∼30 cm2 V–1 s–1). Herein, we develop an adjustable process to obtain high-mobility with both appropriate conductivity infrared transparency at room by reactive plasma deposition (RPD) system, which has many significant...
Based on experiments of both transport and paramagnetic resonance for (La1−xYx)2/3Ca1/3MnO3, the ground state above Tc possible origins insulator–metal transition colossal magnetoresistance near are discussed. Modeling system as a network junctions, each consisting region sandwiched between two ferromagnetic domains, phenomenological expression is proposed resistance function temperature magnetic field. We show that observed magnetotransport phenomena can be quantitatively explained by...
Low damaged doping of two-dimensional (2D) materials proves to be a significant obstacle in realizing fundamental devices such as p–n junction diodes and transistors due its atom layer thickness. In this work, the defect formation energy p-type conduction behavior nitrogen plasma are investigated by first principle calculation. substitutional MoS2 using low composed N+ N2+ is achieved novel toroidal magnetic field (TMF). The TMF helps raise concentration ions at RF power condition....
Modeling the conductive channel as a series of ferromagnetic (FM) domain with resistivity ${\ensuremath{\rho}}_{\mathrm{FM}}$ and paramagnetic (PM) region ${\ensuremath{\rho}}_{\mathrm{PM}},$ we propose phenomenological equation for $\ensuremath{\rho}=[1\ensuremath{-}f(T,H)]{\ensuremath{\rho}}_{\mathrm{PM}}+f(T,H){\ensuremath{\rho}}_{\mathrm{FM}},$ where $f(T,H)$ is volume fraction FM domains. This allows us to account quantitatively reports CMR in optimally doped manganese perovskites. We...
Magnetoresistance (MR) and paramagnetic (PM) resonance experiments for $({\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Y}}_{x}{)}_{2/3}{\mathrm{Ca}}_{1/3}{\mathrm{MnO}}_{3}$ $(x=0.15$ 0.2) show that associated with PM anomalies at $T<~{T}_{\mathrm{onset}},$ the MR becomes observable, especially, both linewidth exhibit similar T-dependent behavior in temperature range of ${T}_{C}<~T<~{T}_{\mathrm{onset}},$ suggesting evidence same underlying origin anomalies. We argue sizable to be due a...
A coupling model is established on piezoelectric semiconductor bipolar junction transistors (PS-BJT) subjected to mechanical loadings by abandoning depletion layer approximation and low injection assumption. Effect of base region device performance interaction between emitter/base (E/B) base/collector (B/C) are investigated. It found that too small a width will cause B/C extract electrons directly from emitter region, implying an electron passageway be excited link collector- emitter-region...
The electron paramagnetic resonance (EPR) spectrum as a function of Tis experimentally studied for (La,Y)2/3 (Ca,Sr,Ba)1/3 MnO3with wide span TC . In the real regime (T Tmin ), consists single line with field being independent T linewidth is given by Hpp = ,min +b -Tmin ). exchange-narrowing spin-spin interaction and spin-lattice are explained to be responsible terms b respectively. Based on mechanism, values directly deduced from -values, which well consistent experimental -values. This...
Transport measurements are performed for the highly ${\mathrm{Mn}}^{4+}$-doped compounds ${\mathrm{La}}_{1/3}{B}_{2/3}{\mathrm{MnO}}_{3}$ $(B=\mathrm{Ca},\mathrm{Sr},\mathrm{Ba}).$ Different from ${\mathrm{La}}_{1/3}(\mathrm{C}\mathrm{a}/\mathrm{S}\mathrm{r}{)}_{2/3}{\mathrm{MnO}}_{3}$ in which a transition to charge-ordered state occurs at low temperatures, ${\mathrm{La}}_{1/3}{\mathrm{Ba}}_{2/3}{\mathrm{MnO}}_{3}$ undergoes semiconductor-metal ${T}_{p}2\ifmmode \tilde{}\else \~{}\fi{}30$ K...
Resistance as a function of temperature and applied magnetic field for doped manganese perovskites is simulated on the basis random-resistor-network model. The network, consisting ferromagnetic metallic particles with number density p paramagnetic insulating 1-p, generated through Monte Carlo method. Approximating by reduced magnetization (m) determined from mean-field theory, we show that simulation can yield main features colossal magnetoresistance in perovskites. Comparisons between...
Monolayer MoS2 possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be promising candidate for flexible wearable optoelectronic devices. In this article, the lateral monolayer homojunctions were prepared by nitrogen plasma selective doping technique. The thin films synthesized chemical vapor deposition characterized photoluminescence, atom force microscope Raman spectroscopy. electronic photoelectric properties of pn npn discussed. results showed...
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