A5040109911- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Terahertz technology and applications
- Solid State Laser Technologies
- Photonic and Optical Devices
- Topological Materials and Phenomena
- Gyrotron and Vacuum Electronics Research
- Superconducting and THz Device Technology
- Cold Atom Physics and Bose-Einstein Condensates
- Photorefractive and Nonlinear Optics
- Chalcogenide Semiconductor Thin Films
- Laser Design and Applications
- Quantum Dots Synthesis And Properties
- Optical properties and cooling technologies in crystalline materials
- Graphene research and applications
- Molecular Junctions and Nanostructures
- Advanced Fiber Laser Technologies
- Random lasers and scattering media
- Semiconductor Lasers and Optical Devices
Institute for Physics of Microstructures
2017-2025
N. I. Lobachevsky State University of Nizhny Novgorod
2019-2021
Institute of Applied Physics
2021
Institute of Semiconductor Physics
2021
Russian Academy of Sciences
2021
Amplified interband emission within the 14–24 μm range is investigated in HgCdTe-based quantum wells under optical pumping. Carrier lifetimes are shown to be marginally limited only by Shockley–Read–Hall recombination, fully realizing advantage of relativistic energy spectra 2D HgCdTe terms suppressing Auger processes. By carefully optimizing waveguides and mitigating carrier heating, we achieve amplification thresholds as low 1.5–2 W/cm2 at a pulse duration 20–500 μs. With last generation...
The discovery of Dirac fermions in a number 2D and 3D materials boosted the solid-state research an unprecedented way. Among many hopes using their exceptional physical properties, it has been argued that reduced nonradiative losses would allow graphene to compete with quantum cascade lasers (QCLs) race for terahertz (THz) emitters. Unfortunately, Auger recombination (AR) process is still active massless gapless graphene. However, massive fermions, AR can be entirely suppressed below certain...
Гетероструктуры с квантовыми ямами на основе твердых растворов HgCdTe в последнее время рассматриваются как перспективный материал для приложений среднего инфракрасного диапазона, частности, создания лазеров. В данной работе исследовано влияние процессов фотолитографии различными масками и ионного травления оптические свойства мезаструктур микродисковыми, микрокольцевыми гребенчатыми резонаторами, сформированных гетероструктур HgCdTe/CdHgTe. Показана возможность использования предлагаемой...
Lasing from HgCdTe microdisc cavities is demonstrated at wavelengths as long 22 — 25 μm. The optical threshold and operation temperature are far being limited by intrinsic recombination processes. employed ion etching technology appears to introduce additional defects in the vicinity of microdiscs, degrading figures merit height cavity increases. However, a watt-level mid-infrared pumping source should suffice for lasing microdiscs with moderate ~100 μm diameter.
Lasing from HgCdTe microdisk cavities is demonstrated at wavelengths as long 20–25 μm. The optical threshold and operation temperature are mainly limited by nonradiative Shockley–Read–Hall type recombination. employed ion etching technology appears to introduce additional defects in the vicinity of microdisks, degrading figures merit height cavity increases. However, a watt-level mid-infrared pumping source should suffice for lasing microdisks with ∼3 ∼100 μm diameter.
We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based temperature dependence of SE threshold, a total Auger recombination (AR) coefficient 10−27 cm6/s has been deduced for QWs, which is much lower than that bulk HgCdTe with same bandgap and indicates suppression (threshold) AR processes due symmetry carrier dispersion curves. demonstrate QW-specific, non-threshold contributes strongly quenching laser action QWs....
We present detailed theoretical analysis of nonradiative Auger recombination in narrow-gap mercury-cadmium-telluride quantum wells (HgCdTe QWs). suggest a microscopic model to calculate rates the QWs with different Cd fraction as functions non-equilibrium carrier density account complex band dispersions and wavefunctions, degenerate statistics, screening effects. Our is validated by comparison measured photoconductivity kinetics simulated curves. Furthermore, we use developed calculation...
Long-wavelength stimulated emission (SE) is studied in optically pumped HgCdTe quantum well heterostructures with dielectric waveguides. Continuous temperature tuning of the wavelength from 27 to 18 μm achieved structures optimized Above μm, SE clamps at 31 wavelength, where mode leaking reduced due Reststrahlen effect GaAs substrate. The operating mainly limited by activation Auger recombination quasi-equilibrium conditions, while low temperatures, we expect that lowering initial carrier...
Due to their widely tunable bandgap, HgCdTe heterostructures with quantum wells are a promising material system for semiconductor lasers in the entire mid-infrared range. Recently, Auger-suppressed structures allowed interband stimulated emission (SE) atmospheric transparency window 3–5 μm well above 200 K, while previously it was limited temperatures below 175 K. In contrast earlier works focused on ridge or vertical emitting lasers, here we demonstrate whispering gallery mode microdisk (d...
Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range regard to long‐wavelength lasing applications. The authors obtain carrier lifetimes using time‐resolved photoconductivity measurements show that the dominating mechanism of recombination changes radiative process non‐radiative one as bandgap is decreased, limiting “operating” temperature for SE. suggest decreasing QW width should reverse...
Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness narrow gap epilayers approaches fundamental limit. The corresponding Urbach energy 1.5 to 4 meV at 4.2 77 K, which an order of magnitude lower than values reported previously, indicating a significant progress quality structures MBE. Auger-suppressed multi-QW can be used for development...
Despite the ultimate performance of existing cascade lasers, simple interband emitters in mid-infrared (IR) can still be interest as a cheaper and widely tunable alternative for some applications. In this work, we show stimulated emission (SE) at 5–6 μm wavelength from an optically pumped mercury–cadmium–telluride quantum well (QW) heterostructures temperatures up to 200 K. At lower temperatures, SE threshold appears mostly determined by conventional eeh Auger recombination, while...
Thin HgCdTe/CdHgTe quantum wells (QWs) grown on alternative GaAs (013) substrates have been recently proposed as a material for coherent emitters in the mid-IR region. In this work, we develop technological process fabrication of ridge microresonators waveguide heterostructures with multiple HgCdTe QWs via photolithography and ion etching. We two samples different heights analyze their emission spectra measured under optical excitation. The width dropped by an order magnitude compared to...
Abstract We study the temperature stability of stimulated emission (SE) in HgCdTe/CdHgTe quantum well (QW) heterostructures emitting mid-infrared range at wavelengths 7–13 μ m. For a series samples with different band gap energies, maximum operating temperatures which SE could be achieved are shown to follow closely characteristic Auger threshold energies derived from spectra respective QWs. demonstrate that realization binary HgTe QWs should provide least twofold increase energy compared...
Heterostructures with quantum wells (QWs) based on HgCdTe are promising systems for making compact semiconductor sources of the mid-infrared range. This range has paramount practical importance due to presence absorption lines common pollutant gases. Stimulated emission (SE) from heterostructures been observed previously at wavelengths up 3.7 μm temperatures above 200 K, but optimal design QW is still debated. We present spectra SE a HgCdTe-based heterostructure obtained room temperature...
In this work, we study stimulated emission (SE) at 3–4 μm wavelengths from optically pumped bulk HgCdTe and HgTe/CdHgTe quantum-well heterostructures. It is proposed that, under intense excitation of such structures, energy relaxation hot electrons occurs mostly via electron–hole scattering, while the holes direct, phonon-mediated. By balancing carrier generation/recombination heating/cooling processes, outline heat-induced limits to operating temperatures mid-IR lasers. Based on existing...
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest room-temperature operating emitters short-wavelength infrared range (SWIR, typically defined as 1.7-3 μm). In this work, we report on observation stimulated emission (SE) in 2.65-2.75 µm wavelength at room temperature an optically pumped HgCdTe QW laser heterostructure. We study a series three samples lengths ranging from 2.5 to 7 mm and...
HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with energy spectrum close graphene-like relativistic dispersion that is supposed suppress non-radiative Auger recombination. We combine various methods such as photoconductivity, photoluminescence magneto-optical measurements transmission electron microscopy retrofit...
Mercury vacancies, acting as double acceptors, are the dominant point defects in ternary HgCdTe alloys. Though is one of leading materials infrared optoelectronics, energy spectra vacancies still a matter some debate. This work investigated rates at which holes captured to singly ionized mercury vacancy via acoustic phonon emission narrow-gap Hg1−xCdxTe with technologically relevant x~0.22. Combined calculated intracenter transitions, data allow predict most pronounced optical transitions...