A5101670698- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Intermetallics and Advanced Alloy Properties
- Thin-Film Transistor Technologies
- Advanced Welding Techniques Analysis
- Electrowetting and Microfluidic Technologies
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- Silicon Nanostructures and Photoluminescence
- Microfluidic and Capillary Electrophoresis Applications
- Metallurgical and Alloy Processes
- Biosensors and Analytical Detection
- Muon and positron interactions and applications
- Semiconductor materials and devices
- Aluminum Alloys Composites Properties
- Innovative Microfluidic and Catalytic Techniques Innovation
- Electrodeposition and Electroless Coatings
- Non-Destructive Testing Techniques
- Analytical Chemistry and Sensors
- Welding Techniques and Residual Stresses
- Advanced biosensing and bioanalysis techniques
- Surface Roughness and Optical Measurements
- Organic Electronics and Photovoltaics
- Microfluidic and Bio-sensing Technologies
- Semiconductor materials and interfaces
University of Cincinnati Medical Center
2023-2024
National Yang Ming Chiao Tung University
2018-2024
University of Cincinnati
2023
City University of Hong Kong
2004-2016
National Dong Hwa University
2014
ESI Group (France)
2011
University of Hong Kong
2005
Nanyang Technological University
1999
Andrews University
1972
University of St Andrews
1972
Thermomigration (TM) in Sn58Bi solder was detected Cu/Sn58Bi/Ni joints supplied with direct current. Thermal electric finite-element simulation showed that a thermal gradient of 527 °C/cm existed joint when current density 5×103 A/cm2 applied to the structure at 50 °C. Depending on direction current, TM found assist or counteract electromigration (EM) diffusion Bi atoms. The atomic fluxes induced by EM and were estimated separately. EM-enhanced cross interaction between Cu Ni across also...
Our previous investigation (1995), revealed the formation kinetics and characteristics of copper-tin (Cu-Sn) intermetallic compounds (IMC) in leadless ceramic chip carrier (LCCC) surface mount solder joints during infrared (IR)-reflow soldering. The present study focuses on solid state growth interfacial Cu-Sn IMC LCCC under prolonged annealing at elevated temperature. A thick layer Sn-Pb solder/Cu interface a joint (which can be achieved by aging high temperature or after long term...
Access to clean water is fundamental public health and safety, serving as the cornerstone of well-being in communities. Despite significant investments millions dollars testing treatment processes, United States continues grapple with over 7 million waterborne-related cases annually. This persistent challenge underscores pressing need for development a new, efficient, rapid, low-cost, reliable method ensuring quality. The urgency this endeavor cannot be overstated, it holds potential...
Purpose This paper aims to systematically study the effect of reinforcement type, processing methods and reflow cycle on actual retained ratio foreign added in solder joints. Design/methodology/approach Two kinds composite solders based SAC305 (wt.%) alloys with reinforcements 1 wt.% Ni TiC nano-particles were produced using powder metallurgy mechanical blending method. The morphology prepared pastes was examined; ratios (RRoR) joints after different cycles analysed quantitatively an...
We report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly the high momentum band of radiation, is not reversed by thermal annealing. suggest, following recent models Staebler-Wronski effect, that exposure induces hydrogen trapped vacancylike defects to become mobile Si network. observations place constraints motion fitting macroscopic effect kinetics and may help...
The micro-ball grid array (/spl mu/BGA), a form of chip scale package (CSP), was developed as one the most advanced surface mount devices, which may be assembled by ordinary technology. In latest /spl mu/BGA type, eutectic tin-lead solder ball bumps are used instead plated nickel and gold (Ni/Au) bumps. Assembly reliability mu/BGA's PCB, is soldered conventional technology, has been studied in this paper. bending cycle test (1000 mu//spl epsi/ to -1000 epsi/), investigate fatigue failure...
The melting failure in flip chip Sn3.5Ag1.0Cu solder interconnects was investigated under a current density of 2.3×104A∕cm2 at 125°C, which attributed to the accumulated effect void propagation, chemical dissolution, and Al electromigration. velocity growth varied from 0.2to0.5μm∕h earlier stages. dissolution pad also played important role failure. In final stage, depletion trace due electromigration exhibited linear relationship with time. rate resistance change estimated be 0.9%h−1.
Sample preparation, as a key procedure in many biochemical protocols, mixes various samples, and/or reagents into solutions that contain the target concentrations. Digital microfluidic biochips (DMFBs) have been adopted platform for sample preparation because they provide automatic procedures require less reactant consumption and reduce human-induced errors. However, most existing methods only consider two-reactant cannot be used applications involve multiple reactants. In addition, can...
Sample preparation, as a key procedure in many biochemical protocols, mixes various samples and/or reagents into solutions that contain the target concentrations. Digital microfluidic biochips (DMFBs) have been adopted platform for sample preparation because they provide automatic procedures require less reactant consumption and reduce human-induced errors. However, traditional DMFBs only utilize (1:1) mixing model, i.e., two droplets of same volume can be mixed at time, which results higher...
The thermal stress in a Sn3.5Ag1Cu half-bump solder joint under 3.82×108A∕m2 current stressing was analyzed using coupled-field simulation. Substantial accumulated around the Al-to-solder interface, especially Ni+(Ni,Cu)3Sn4 layer, where maximal of 138MPa identified. gradient Ni layer about 1.67×1013Pa∕m, resulting migration force 1.82×10−16N, which is comparable to electromigration force, 2.82×10−16N. Dissolution void formation with cracks at anode side, and extrusions cathode side were observed.