A5100681749- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
- Advanced MEMS and NEMS Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
- Analytical Chemistry and Sensors
- Ion-surface interactions and analysis
- Radiation Effects in Electronics
- Silicon Nanostructures and Photoluminescence
- Neural Networks and Applications
- Solid State Laser Technologies
- Photoacoustic and Ultrasonic Imaging
- Advancements in PLL and VCO Technologies
- Molecular Junctions and Nanostructures
- Photonic and Optical Devices
- VLSI and Analog Circuit Testing
- Geoscience and Mining Technology
- Parallel Computing and Optimization Techniques
- Laser Design and Applications
- Silicon and Solar Cell Technologies
- Water Quality Monitoring and Analysis
- Advanced Fiber Laser Technologies
Shanghai Institute of Microsystem and Information Technology
2005-2024
Chinese Academy of Sciences
2001-2024
Dalian University of Technology
2023
State Key Laboratory of Functional Materials for Informatics
2015
Institute of Molecular Functional Materials
2015
Ansys (United States)
2012
Kunming University of Science and Technology
2010
Yale University
2001
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The exhibit electronically and erasable bits compatible with conventional threshold levels a cell applicable to random access is demonstrated. Bit retention times >15 min have been observed.
A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and short-channel effects is proposed successfully demonstrated. In new structure, a tunnel diode body contact embedded in source region, which can effectively release accumulated carriers. an nMOSFET, heavily doped p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layer introduced beneath n region so that are connected through tunneling. The fabricated device shows...
In this Letter, a high-power diode-side-pumped Nd:YAG laser emitting at 1338 nm is described. The output characteristics of the using different couplers for both cw mode and Q-switched have been studied. With pumping power 555 W, average decreases from 70 W 50 kHz to 55 (slope efficiency 21.2%, optical conversion 10%) 5 kHz. highest peak up 73 kW with pulse duration 150 ns repetition rate When operated in mode, 100.5 was achieved, corresponding slope 36%.
The hysteresis effect on the output characteristics, which originates from floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$^{\circ}\hbox{C}$</tex></formula> and 125 Notation="TeX">$^{ \circ}\hbox{C}$</tex></formula> . For a better understanding of authors...
Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and deep drain to eliminate total-ionizing-dose induced back-channel leakage suppress floating body effects. In contrast, significant current is observed in T-gate (TB) nMOSFETs, as result of trapped charge the buried oxide. A subthreshold hump TDBC nMOSFETs after irradiation. The at trench isolation (STI) corner major reason for post-irradiation current-voltage characteristics. Pocket p <sup...
Radio-frequency (RF) performance of multi-finger partially depleted silicon-on-insulator (SoI) nMOSFETs with tunnel diode body contact (TDBC) structure is investigated in this letter. The TDBC suppresses floating-body effect and instability significantly shows less drain conductance degradation respect to FB TB devices. peak cutoff frequency (fT) maximum oscillation (fMAX) devices are 96.4 132.8 GHz, respectively. Due lower parasitic resistances capacitances, the device structures represents...
In this paper, we report TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10-nm scaling. The GAAC device physics, simulation, and proposed fabrication procedure have been discussed. Among all other novel fin field effect (FinFET) devices, the can be particularly used reducing problems of conventional multi-gate FinFET, improving performance, scaling-down capabilities. With architecture, is controlled essentially by infinite number gates surrounding entire cylinder-shaped...
A tunnel diode body contact (TDBC) SOI structure is presented as a means to suppress the floating effect in partially depleted (PD) p-MOSFETs. Experiments using phosphorus implantation were carried out form source region. Tunnel embedded region, which can effectively release accumulated carriers. The fabricated device shows suppressed expected. new does not enlarge size and fully compatible with CMOS technology.
In this work, the electrostatic and radio frequency performances of 22 nm FDSOI nMOSFETs with p-type or n-type doped backplane (BP, highly layer silicon below thin buried oxide) at cryogenic temperatures have been investigated. Greater enhancement drain current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ d}}$ </tex-math></inline-formula> , maximum transconductance...
A novel asymmetric static RAM (SRAM) cell is fabricated on planar silicon‐on‐insulator CMOS technology, in which pass‐gate (PG) transistors are asymmetric. Since lightly doped drain structure of PG use only gate‐to‐source, this improves read stability by 43% when compared with the conventional SRAM 6T symmetric cell. Additionally, cell‐leakage current reduces 24% also due to transistor gate‐to‐drain underlap design. Although it needs more write data storage node, but no voltage needed based...
A 576 Mb DRAM is implemented with 16 serial links at 10.3125Gbps. Using careful memory/SerDes/package co-design, the system achieves 14.5ns latency and 24.75GByte/s read/write bandwidth. It SRAM-like random access by using logic-compatible 65nm GP embedded small 36 Kb sub-arrays hidden refresh.
Single-event transient (SET) responses are compared for floating-body contact, T-gate body-contact (TB), and tunnel-diode (TDBC) silicon-on-insulator (SOI) MOSFETs. The influence of three schemes on SET sensitivity is examined via irradiations as functions position, bias voltage, device size. mechanisms in SOI devices discussed. Although both TB TDBC suppress floating body effects (FBEs), the scheme has superior hardness because it effectively eliminates charge enhancement due to bipolar...
Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions energy and dose. It was found that hydrogen not only accelerate diffusion atoms from annealing ambience wafer but also cause an outward in buried oxide (BOX) layer. Thus, greatly broadened oxygen-rich (BOR) layers formed our experiments, which are 18%–79% broader than BOX layer standard SIMOX SOI same...
We present a novel method to realize 3D adiabatically Spot-Size Converter (SSC) structures by standard silicon micromachining technics, for efficient coupling from single-mode fiber or free-space photonic chip. The SSC is comprised of I/O waveguides and tapered coupler on silicon-on-insulator (SOI) substrate. dimensions are decreased linearly in both vertical horizontal directions input facet output facet. slope direction was originated the angle between surface (111) SOI wafer real crystal...
Key words: silicon on insulator (SOI), SOI-on
Tunnel diode body contact (TDBC) MOSFETs is used to suppress floating effects (FBE) and achieve significant improvement in RF performance. For the first time, low frequency noise (LF noise) of TDBC MOSFETs, also called 1/f noise, reported this paper. LF performance (FB), T-gate (TB) MOSFET fabricated 0.13 µm Smart-Cut partially depleted (PD) SOI technology compared. Excess Lorentzian caused by ionization impact under high drain voltage observed FB devices. Due tunnel embedded beneath source...
The effects of back gate bias (BGEs) on radio-frequency (RF) performances in PD SOI nMOSFETs are presented this paper. Floating body (FB) device, T-gate body-contact (TB) and tunnel diode (TDBC) which the supply voltages all 1.2 V, compared under different biases by figures merit, such as cut-off frequency (fT), maximum oscillation (fmax), etc. Because lack a conducting channel, drain conductance (gd) TDBC transistor shows smaller degradation than those others, trans-conductance (gm) is...
This article reported a fiber optic acoustic sensor (FOAS) used for measuring snoring signals. The fabricated consists of single-mode collimator and gold-plated quartz film. Based on the incident-angle sensing mechanism, gets rid stringent control operating wavelength cavity length, which greatly reduce difficulty cost equipment manufacturing. Experimental results show that has sensitivity -145.3dB (re V/µPa @5KHz) minimum detectable sound pressure (MDP) 14.0µPa/Hz1/2 @ 5KHz. prepared...
An improved mobility model for device simulation is presented. The based on charge density instead of effective surface electric field. Compared to the other models, it accounts substrate bias effect and channel length dependence.