The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. reconstructed three-dimensional atomic images clearly show that the crystal is mainly sphalerite type, in contrast to bulk form. A large disordering As layers observed, whereas positions Zn/Sn atoms are relatively stable. analysis data indicates serve as buffer and relax strain caused by random occupation Zn Sn atoms. These results provide further understanding means...

Properties of reactively sputtered WNx films on a GaAs substrate have been investigated by electrical and physical analyses. were deposited from pure W target using three types sputtering systems: (1) Magnetron system equipped with rf dc mode; (2) S-gun system; (3) diode system. The composition was easily reproducibly controlled changing the N2 content in Ar–N2 mixed ambient gas. WNx–GaAs both electrically metallurgically stable even after high-temperature annealing up to 800 °C. Schottky...

Local atomic structures around Mn in $(\mathrm{Zn},\mathrm{Sn},\mathrm{Mn}){\mathrm{As}}_{2}$ thin films grown on InP (001) substrates were studied using x-ray fluorescence holography. The reconstructed three-dimensional images showed that the addition of resulted further distortions As sublattice from pure sphalerite ${\mathrm{ZnSnAs}}_{2}$. first-principles calculations distortion could be attributed to shortening Mn-As bond length induced by p-d exchange mechanism, which mediates...

An ultrahigh-speed 8-b multiplexer (MUX) and demultiplexer (DMUX) chip set has been developed for the synchronous optical network (SONET) next-generation optical-fiber communication systems, which will require data bit rates of about 10 Gb/s. These ICs were designed using three novel concepts: a tree-type architecture giving reliable operation, dynamic divider with wide operating range, 50- Omega on-chip transmission line high-speed pulse propagation. They fabricated 0.5- mu m WN/sub x/-gate...

A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System the 1.9 GHz band. In combination with MESFETs on-resistance and high breakdown voltage, resonant-type utilizes stacked FETs an additional shunt capacitor receiver side order to realize insertion loss, isolation distortion characteristics. An loss 0.55 dB 35.8 were obtained GHz. The also achieved second -54.3 dBc adjacent channel leakage -66 600 kHz apart from 19...

ZnSnAs2 thin films were prepared by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using the same growth conditions as previously reported. High-resolution X-ray diffractometry (HRXRD) and Raman spectroscopy studies suggest presence of both chalcopyrite sphalerite phases. The transport properties measured from 5 K up to room temperature. We observed a pronounced peak in Hall coefficient temperature dependence curve at ∼130 K, similar those only chalcopyrite-phase bulk...

ZnSnAs2 epitaxial film has been grown on epi-ready semi-insulating InP(001) substrates by low-temperature molecular beam epitaxy (LT-MBE) technique. The MBE-grown sample was then cleaved into pieces, three of which were subjected to lowtemperature annealing at different temperatures 300 ∘C, 320 ∘C and 340 are equal or slightly higher than growth temperature using face-to-face proximity capping GaAs wafers simulate arsenic atmosphere. HR-XRD measurements showed that increasing decreases the...

Abstract The previously reported transport properties data of the undoped ZnSnAs 2 grown on semi‐insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and analysed. We found out that temperature dependence Hall coefficient resistivity can be well explained impurity band model proposed Isomura Tomioka. By using said model, we were able to resolve experimentally obtained carrier concentration p exp mobility μ into valence v with acceptor a . computed apparent values app...

ZnSnAs2 epitaxial films were grown by molecular beam epitaxy (MBE) on nearly lattice matched InP substrates. Four samples namely A, B, C, and D prepared at different growth times of 15, 30, 50, 83 mins, respectively, using the optimum conditions earlier reported to obtain values thickness for purpose structural characterization High-Resolution X-ray Diffraction (HR-XRD). HR-XRD investigations revealed unrelaxed constant a⊥ along direction 5.8991 Å, 5.8886 5.8928 Åfor D, respectively....

Abstract The electronic and magnetic properties of pure as well Mn‐doped chalcopyrite semiconductor ZnSnAs 2 were studied by the DFT+U ab initio method within spin generalized gradient approximation. band structure DOS calculations resulted in a direct gap scenario for semiconducting . energy 0.34 eV occurs at center Brillouin zone linearly increases with increasing Mn concentration x rate 2.05 < 0.03. total number supercells showed that ferromagnetic rather than antiferromagnetic...

Ultra-high-speed 2-b multiplexer (MUX) and demultiplexer (DEMUX) ICs have been developed for next-generation optical fiber communication systems in the SONET (synchronous network), which will require data bit rates of about 10 Gb/s. The were fabricated using a 0.5- mu m WN/sub x/-gate process operated up to 12 Gb/s by adopting tree-type architecture with large phase margin new on-chip transmission line called ladder grounded coplanar line. These are applicable future (STS-192) as key...

Abstract GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied decreasing Curie temperature T C and transition towards metallic behavior of the film properties incorporation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

It is well-known that the coimplantation of carbon (C) in a concentration range comparable to boron (B) concentrations could suppress B diffusion, resulting boxlike profile. Substitutional C atoms can capture excess self-interstitial Si and diffusion ion-implanted intersitial-type dopants such as silicon (Si). However, effect on activation properties wide ranges has not been sufficiently investigated. In this work, experiment ranges, it was clarified for first time ratio increases or...

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the phase, distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) are investigated using three-dimensional atom probe tomography. results indicate an inhomogeneous distribution which spreads to relatively high of 9.0 at. % (at. %). paramagnetic it found that transition takes...

X-ray fluorescence holographic study on a room-temperature ferromagnetic semiconductor film of ZnSnAs2:Mn was performed using strong beam third generation synchrotron radiation SPring-8. The real space reconstructions the environments around Mn atoms were successfully visualized from observed holograms despite very small amount atoms. revealed that occupy cation (Zn or Sn) site.

A monolithic GaAs power amplifier IC using refractory WN/sub xW self-aligned gate MESFETs has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system. The operates with high efficiency and low distortion a single voltage supply of 2.7-3.0 V, by virtue small drain knee voltage, transconductance sufficient breakdown MESFET. An output 23.7 dBm power-added 24.2% were attained at 3 V /spl pi4-shifted QPSK (quadrature phase shift keying)...

Abstract GaSb thin films using an Sb template layer on Si(111) substrates were grown by MBE to investigate the effect of crystalline quality films. Structural properties compared with those AlSb initiation and a film directly substrate. For prepared layer, streaky RHEED patterns observed throughout growth typical surface RMS roughness value 7.4 nm was obtained. The results θ‐2θ scan XRD investigations indicated that is nearly unstrained. φ‐scan measurements respect {422} reflection peaks did...

We present for the first time temperature dependence of resistivity, anomalous Hall effect, and extraordinary magnetoresistance (MR) in 6.5% Mn-doped ZnSnAs2 epitaxial film prepared by molecular beam epitaxy (MBE) on InP(001) substrates. The magnetic field magnetization (M–H curve) show clear hysteresis loops at 300 K fields applied both perpendicular parallel to sample surface. Curie was evaluated be 350 K. Near-zero-field resistance were also observed various temperatures corresponding...