A5012559029- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Electrocatalysts for Energy Conversion
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Advanced battery technologies research
- Catalytic Processes in Materials Science
- Semiconductor materials and devices
- Fuel Cells and Related Materials
- Gas Sensing Nanomaterials and Sensors
- Catalysis and Oxidation Reactions
- Advanced biosensing and bioanalysis techniques
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Optical Wireless Communication Technologies
- Advanced Battery Materials and Technologies
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- Metallic Glasses and Amorphous Alloys
- Perovskite Materials and Applications
- Wastewater Treatment and Nitrogen Removal
- Catalysts for Methane Reforming
- Semiconductor Quantum Structures and Devices
- Ocular Oncology and Treatments
University of Science and Technology of China
1989-2025
Nanyang Technological University
2024
Huaiyin Institute of Technology
2024
Dalian Institute of Chemical Physics
2019-2022
University of Chinese Academy of Sciences
2019-2022
Chinese Academy of Sciences
2020-2022
National Synchrotron Radiation Laboratory
2018-2020
Abstract Single-atom catalysts offering intriguing activity and selectivity are subject of intense investigation. Understanding the nature single-atom active site its dynamics under working state crucial to improving their catalytic performances. Here, we identify at atomic level a general evolution single atom into near-free electrocatalytic hydrogen condition, via operando synchrotron X-ray absorption spectroscopy. We uncover that Pt tends dynamically release from nitrogen-carbon...
Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type (PEC–PDs), which depart completely from classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures silicon. Importantly, with proper surface platinum (Pt)...
Abstract Photoelectrochemical photocurrent switching (PEPS) effect can regulate the polarity of photocurrent, which has significant potential applications in areas such as logic gates, photosynapse, and artificial intelligence. In this work, it is reported for first time that a pure Ga 2 O 3 photoelectrochemical system exhibits ambipolar behavior induced by deep ultraviolet, closely linked to crystalline phase (α or β) surface states oxygen vacancies. Spongy porous nanorod arrays (NRAs)...
III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical material properties sometimes limits device functionalities to meet the increasing demands in versatile complex world. By leveraging distinctive nature of one-dimensional geometry large surface-to-volume ratio nanowires, new can be attained through monolithic integration conventional with other easy-synthesized functional...
Abstract Hydrogen, produced through a zero‐pollution, sustainable, low‐cost, and high‐efficiency process, is regarded as the “ultimate energy” of 21st century. Solar water‐splitting techniques have immense potential to make idea reality. Two promising approaches, photovoltaic‐electrolysis (PV‐EC) photoelectrochemistry (PEC), demonstrated solar‐to‐hydrogen conversion efficiency over 10%, which minimum required for competitively priced, large‐scale systems. Extensive studies PV‐EC PEC devices...
The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed gallium nitride (GaN) homojunction nanowire array that operates in electrolyte is reported, demonstrating photoresponse controlled by different wavelengths light. Significantly, rational decoration ruthenium oxides (RuOx ) layer on nanowires...
The development of an efficient and durable photoelectrode is critical for achieving large-scale applications in photoelectrochemical water splitting. Here, we report a unique composed reconfigured gallium nitride nanowire-on-silicon wafer loaded with Au nanoparticles as cocatalyst that achieved impressive applied bias photon-to-current efficiency 10.36% under AM 1.5G one sun illumination while exhibiting stable PEC hydrogen evolution over 800 h at high current density. Specifically, by...
The controllable synthesis of stable single-metal site catalysts with an expected coordination environment for high catalytic activity and selectivity is still challenging. Here, we propose a cation-exchange strategy precise production edge-rich sulfur (S) nitrogen (N) dual-decorated (M) (M = Cu, Pt, Pd, etc.) library. Our relies on the anionic frameworks sulfides N-rich polymer shell to generate abundant S N defects during high-temperature annealing, further facilitating stabilization...
Abstract Searching for power‐independent, compact, and highly environment‐sensitive photodetectors is a critical step towards the realization of next‐generation energy‐efficient sustainable integrated optoelectronic systems. Particularly, deep ultraviolet (UV) band, which has large photon energy, extremely suitable environment monitoring invisible light communication application. Herein, demonstration self‐powered UV solar‐blind in photoelectrochemical (PEC) cell configuration reported,...
Modulating the electronic structure of cocatalysts is critical for designing active sites toward efficient photocatalytic H2 evolution. Here, we report an modulation in atomically dispersed Pt as highly H2-evolution on graphitic carbon nitride (g-C3N4) nanosheets. Synchrotron radiation X-ray spectroscopic results confirm singly atoms anchored g-C3N4 via forming "Pt1–N4" moiety, where strong interaction with supports leads to redistribution valence electrons vacant 5d orbital. Mechanistic...
Abstract A surface digging effect of supported Ni NPs on an amorphous N‐doped carbon is described, during which the surface‐loaded would etch and sink into underneath support to prevent sintering. This process driven by strong coordination interaction between atoms N‐rich defects. In aim activation C−H bonds for methane oxidation, those sinking could be further transformed thermodynamically stable active metal‐defect sites within as‐generated holes simply elevating temperature. situ...
In this Letter, we perform a comprehensive investigation on the optical characterization of micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting light extraction behavior in relation to design chip sidewall angle. We found that micro-LEDs with smaller inclined angle ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼</mml:mo> </mml:mrow> <mml:msup> <mml:mn>33</mml:mn> <mml:mo>∘</mml:mo>...
Abstract The intriguing surface sensitivity of the single‐crystalline semiconductor nanowires offers tremendous opportunity in tuning physical properties nanophotonic and nanoelectronic devices for versatile applications. Particularly, pursuit emerging photoelectrochemical (PEC)‐type devices, significant efforts have been devoted to understanding charge transfer dynamics between electrolyte. Here, a PEC‐type ultraviolet photodetector consisting GaN p ‐ n junction as photoelectrodes is...
In this work, we investigated the temperature-dependent photodetection behavior of a high-performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm illumination. As temperature continuously rises from room to 250 °C, photocurrent device increases in beginning but suffers degradation afterwards. This can be explained by competing process between generation and recombination rate photo-induced carriers UVPT at high temperatures. Intriguingly, found that optimal for...
Abstract The emerging photoelectrochemical‐type photodetector (PEC‐PD), because of its unique device architecture by using an aqueous electrolyte, is naturally applicable in the pursuit underwater optical communication without sophisticated packaging and assembling. Unfortunately, traditional PEC detecting process typically involves a large electrochemical workstation with long cables wire connections for photo signal acquisition, which hinders applications wireless communication. In this...
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 °C. The DUV PDs self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) the order 105 at zero bias >105 higher biases 5 10 V, which remains almost constant responsivity 6.62 A/W is obtained V room temperature (RT) under...
Abstract Controlling interfacial and surface carrier dynamics associated with nanostructured semiconductors is the key to achieving outperforming electrical optical characteristics in photoelectrochemical (PEC) devices. A strategy for renovation by loading a co‐catalyst (functional nanoparticles or layers) can unambiguously empower device superior property. In this work, PEC‐type solar‐blind photodetector based on wide‐bandgap p‐AlGaN nanowires reported which Rh–Cr 2 O 3 hybrid structures...
Abstract The carrier transport dynamics at the surface/interface of semiconductors determine electronic and optical properties devices. Thus, precise control their dynamic processes while understanding nature these characteristics is crucial for modulating device functionalities. Here, a photoelectrochemical‐type photosensor built using monocrystalline p‐GaN nanowires on Si platform, which unambiguously exhibits either positive or negative photocurrent upon different light illumination. Such...
Optical wireless communication (OWC) systems are emerging as a crucial technique for the development of next-generation data transmission and acquisition, with particular interest in solar-blind deep-ultraviolet (DUV) well visible-light (VL) band, owing to their superior advantages either free space or underwater application scenarios. A light-emitting device, which normally acts signal transmitter OWC, capable generating dual wavelengths, would certainly expand capacity functionality OWC....
Abstract Underwater optical communication (UOC) has attracted considerable interest in the continuous expansion of human activities marine/ocean environments. The water‐durable and self‐powered photoelectrodes that act as a battery‐free light receiver UOC are particularly crucial, they may directly face complex underwater conditions. Emerging photoelectrochemical (PEC)‐type photodetectors appealing owing to their intrinsic aqueous operation characteristics with versatile tunability...
Abstract The operational principle of semiconductor devices critically relies on the band structures that ultimately govern their charge‐transfer characteristics. Indeed, precise orchestration structure within devices, notably at surface and corresponding interface, continues to pose a perennial conundrum. Herein, for first time, this work reports novel postepitaxy method: thickness‐tunable carbon layer decoration continuously manipulate bending III‐nitride semiconductors. Specifically,...
The physicochemical properties of a semiconductor surface, especially in low-dimensional nanostructures, determine the electrical and optical behavior devices. Thereby, precise control surface is prerequisite for not only preserving intrinsic material quality but also manipulating carrier transport promoting device characteristics. Here, we report facile approach to suppress photocorrosion effect while boosting photoresponse performance n-GaN nanowires constructed photoelectrochemical-type...