Yaxin Zhang

ORCID: 0000-0001-9418-4522
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About
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Research Areas
  • Radio Frequency Integrated Circuit Design
  • Photonic and Optical Devices
  • Microwave Engineering and Waveguides
  • Metamaterials and Metasurfaces Applications
  • Advanced Antenna and Metasurface Technologies
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology
  • Terahertz technology and applications
  • Millimeter-Wave Propagation and Modeling
  • Semiconductor materials and interfaces
  • Antenna Design and Analysis
  • Graphene research and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Tactile and Sensory Interactions
  • Remote Sensing and Land Use
  • Plasmonic and Surface Plasmon Research
  • Advanced DC-DC Converters
  • Image and Signal Denoising Methods
  • Advanced Measurement and Detection Methods
  • Mineral Processing and Grinding
  • Advanced Algorithms and Applications
  • Engineering Structural Analysis Methods
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices

University of Electronic Science and Technology of China
2015-2025

Xi'an Jiaotong University
2021-2024

China Mobile (China)
2024

State Key Laboratory of Mobile Networks and Mobile Multimedia Technology
2024

Shanghai Zhangjiang Laboratory
2024

Yiwu Science and Technology Research Institute
2024

Xinjiang University
2024

University of Birmingham
2023

China Three Gorges University
2023

Dalian Maritime University
2023

Accurate power load forecasting can facilitate effective distribution of and avoid wasting so as to reduce costs. Power is affected by many factors, accurate more difficult, the current methods are mostly aimed at short-term problems. There no good method for long-term Aiming this problem, paper proposes an LSTM-Informer model based on ensemble learning solve problem. The bottom layer uses long memory network (LSTM) a learner capture time correlation load, top Informer dependence problem...

10.3390/electronics12102175 article EN Electronics 2023-05-10

Abstract Stress tolerance plays a vital role in ensuring the effectiveness of piezoresistive sensing films used flexible pressure sensors. However, existing methods for enhancing stress employ dome-shaped, wrinkle-shaped, and pyramidal-shaped microstructures intricate molding demolding processes, which introduce significant fabrication challenges limit performance. To address these shortcomings, this paper presents periodic microslits film made multiwalled carbon nanotubes...

10.1038/s41378-023-00639-4 article EN cc-by Microsystems & Nanoengineering 2024-02-08

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has gate length of 0.5 μm and width 2 × 40 μm. The G-FET channel patterned into an array bow-tie-shaped nanoconstrictions, resulting in the impedance levels ~50 Ω ON-OFF ratios ≥4. circuit implemented coplanar waveguide technology realized 100-μm-thick highly silicon substrate. conversion loss measured to be 29 ± dB...

10.1109/tmtt.2016.2615928 article EN IEEE Transactions on Microwave Theory and Techniques 2016-12-02

This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor (SiGe HBT) amplifier operating at 200 GHz. The consists of three cascaded gain-cell stages and was implemented in experimental 130-nm SiGe HBT technology with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 460/600 In order to achieve the demonstrated extremely low dc power...

10.1109/jssc.2019.2959510 article EN IEEE Journal of Solid-State Circuits 2020-01-01

An approach for online current sensing calibration is presented where an auxiliary switch and a precision sense resistor are connected in parallel with main power to achieve accuracy comparable the method, together advantage of essentially no additional loss. The proposed current-sensing circuit methods particularly well suited digital controller implementations required control functions can be easily accomplished. Experimental results digitally controlled 1.5-V 15-A synchronous buck...

10.1109/lpel.2004.839635 article EN IEEE Power Electronics Letters 2004-09-01

Molybdenum disulfide (MoS2), as a representative layered transition metal dichalcogenide material, possesses great potential applications in highly sensitive detection. In this paper, sensitivity-enhanced surface plasmon resonance fiber sensor modified with an overlayer of MoS2 nanosheets is proposed and demonstrated. The sensitivity, which related to the thickness overlayer, can be tailored by number deposition cycles. Benefiting from large area, high refractive index, unique optoelectronic...

10.1021/acs.jpcc.9b00107 article EN The Journal of Physical Chemistry C 2019-04-01

This paper introduces modular masterless multi-phase architecture based on identical digitally controlled DC-DC converter modules that communicate over a digital bus. Advantages of the include simpler system configuration and development, scalability to an arbitrary number phases. Technical challenges are facilitate proper phasing, control current sharing functions, while minimizing data throughput requirements for A chain algorithm is proposed implement in architecture. The performs moving...

10.1109/pesc.2005.1582018 article EN 2006-10-04

Electron probe micro-analysis (EPMA), micro-beam wide angle X-ray diffraction (Micro-beam WAXD), micro-Raman and nano-infrared (nano-IR) spectroscopy were performed to characterize the hierarchical radial structure within polyacrylonitrile (PAN) fibre which was obtained by wet-spinning method, including morphology, aggregation molecular chain conformation. The results indicated that along direction of PAN fibre, skin layer reflects denser morphology compared core region. crystallinity,

10.1039/c9ra02125f article EN cc-by-nc RSC Advances 2019-01-01

The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula> ) maximum oscillation {max}}$ 300 500 GHz was characterized from 298 K down to 4.3 K. At K, the increases by 65% measured 317 (at K) 525 GHz. increase starts saturate below 73 physical reasons for...

10.1109/jxcdc.2021.3130041 article EN cc-by-nc-nd IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2021-11-23

This letter presents a 97-GHz downconversion mixer in 130-nm SiGe HBT technology. For achieving the demonstrated ultralow dc power consumption, was designed with transistors operating saturation using an accurate compact model. With 0.7-V supply voltage and -5-dBm local oscillator pumping power, this achieves double-sideband conversion gain (CG) of 6.6 ± 3 dB over RF frequency range from 91 to 100 GHz, consuming 12-mW static power. further reduced 0.5 V, still works maximum upper-sideband CG...

10.1109/lmwc.2019.2901410 article EN IEEE Microwave and Wireless Components Letters 2019-03-15

We report on the design and characterization of a 200 GHz resistive subharmonic mixer based single, multi-channel CVD graphene field effect transistor (G-FET). The device has gate length 0.5 μm width 2×40 μm. integrated circuit is implemented in coplanar waveguide (CPW) technology realized 100 thick high silicon substrate. measured conversion loss (CL) 34 ± 3 dB across 190-210 band with 10 dBm local oscillator (LO) pumping power overall minimum CL gives 31.5 at 190 GHz.

10.1109/mwsym.2016.7540287 article EN 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 2016-05-01

A receiver composed by a graphene FET 200-GHz mixer and 1-GHz intermediate frequency amplifier integrated on silicon substrate was modelled, fabricated characterized. This is the first demonstration of millimeter wave based FETs. The conversion loss measured to be 25 dB across 185-205-GHz band with 16 dBm local oscillator pump power, which in good agreement circuit simulations. simulations show that can significantly reduced reducing contact resistance realizing higher charge carrier...

10.1109/irmmw-thz.2018.8510069 article EN 2018-09-01

A polarization-insensitive, square split-ring resonator (SSRR) is simulated and experimented. By investigating the influence of asymmetrical arm width in typical SSRRs, we find that variation enables a blue shift resonance frequency for 0° polarized wave red 90° wave. Thus, will be identical by asymmetrically adjusting SSRR. Two modified, resonators (MSRRs) are insensitive to polarization with widths designed, fabricated, tested. Excellent agreement between simulations experiments MSRRs...

10.3788/col201513.101601 article EN Chinese Optics Letters 2015-01-01

On the basis of testing data yield strength various types plastic metals under biaxial and triaxial combined tensile-compressive principal stress, relative errors calculated using Tresca theory, Mises Mohr-Coulomb criterion, Beltrami's maximum energy theory limiting strain (LSEST) are analyzed, respectively. The result shows that according to LSEST within 10%, being minimum. by criterion -36%, -27% -23%, calculating results on conservative side compared with test ones. For materials equal...

10.6052/j.issn.1000-4750.2012.09.0622 article EN 工程力学 2014-01-25

Wide-scale automatic monitoring based on the Normalized Difference Water Index (NDWI) and Mask Region-based Convolutional Neural Network (Mask R-CNN) with remote sensing images is of great significance for management aquaculture areas. However, different spatial resolutions brought cost model performance. To find more suitable image offshore areas, seven resolution in Sandu’ao area China, from 2 m, 4 to 50 were compared. Results showed that a 15 m above can achieve corresponding recognition...

10.3390/rs14133079 article EN cc-by Remote Sensing 2022-06-27

Modular multilevel converter-based high voltage current (MMC-HVDC) system is widely utilized in power transmission systems. Insulated gate bipolar transistor (IGBT) one of the core devices MMC. The degradation mechanism significance to safe and reliable operation MMC-HVDC system. Compared with module IGBTs (PMIs), press-pack (PPIs) have short-circuit failure mode double-side cooling advantages. This paper uses cycling tests microscopic observation methods study condition deterioration...

10.1109/ichve53725.2022.9961806 article EN 2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE) 2022-09-25

Electro-thermal characterization of SiGe HBTs was performed for different operating points. Small-signal simulations with a single-pole and various multi-pole thermal networks are compared measured data over wide frequency range. The results show that nodal recursive unable to match the phase impedance Z <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> , while Foster, Cauer Cauer-type more accurate flexible modeling . Furthermore, guide...

10.1109/bcicts53451.2022.10051764 article EN 2022-10-16

This passage would briefly introduce the Retinal Implant technology from three aspects: System, structure and signal processing of implantation, reviewing on several existing specific example in market, also comparing contrasting them making possible suggestions future developing pathways.

10.61173/tamncj38 article EN other-oa Science and Technology of Engineering Chemistry and Environmental Protection 2024-08-14

10.1109/icops58192.2024.10627573 article DE 2020 IEEE International Conference on Plasma Science (ICOPS) 2024-06-16

Achieving ultra-precise wide-range terahertz (THz) phase modulation has been a long-standing challenge due to the short wavelength and sensitive of THz waves. This paper proposes new ultra-high precision control method employing digitally coding needle meta-chip embedded in waveguide. The tips can effectively couple waves via charge aggregation effect. By controlling Schottky diodes with voltages, on each meta-structure part be tuned form strong or weak resonances, producing shifts....

10.1364/prj.525410 article EN Photonics Research 2024-06-19
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