We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4nm radius and gate length ranging from 22to408nm. observed strong transconductance overshoot in linear source-drain bias regime devices channel shorter than 46nm. The mean free path estimated slope zero-field one dimensional ballistic resistance measured as a function device was almost same this length.

Li1.3Al0.3Ti1.7(PO4)3 (LATP) is a promising solid electrolyte material due to its stability in ambient conditions and cost-effectiveness. Moreover, high shear modulus hinders lithium dendrite growth metal batteries. Nevertheless, an undesired side reaction occurring between LATP contributes battery degradation. In this study, we propose simple method infiltrate zinc oxide into LATP, aiming enhance the of interface LATP. The infiltration process involves immersion electrolytes nitrate...

A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through located shortest path between source electrodes. dot size calculated from is ∼7 nm, which consistent with of incorporated transistor.

A resistless nanostructure patterning technique using tip oscillation of an atomic force microscope (AFM) was systematically investigated. Commercial AFM cantilevers are used to successfully generate patterns as narrow 10 nm on a GaAs surface, without further sharpening the tips. Reliable with fully controlled width and depth achieved by adjusting feedback gain scan speed. This process allows nanometer-scale be performed simply, is well suited for nanodevice fabrication.

The application of atomic-force-microscope (AFM) direct patterning to the selective positioning InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. AFM was used generate various patterns several tens nanometers in size, QDs were subsequently grown by metalorganic chemical vapor deposition technique. A nonuniform distribution observed near patterns. detailed shape QD size depended geometrical properties such as sidewall angle, spacing, width We...

We study non-Markovian decoherence phenomena by employing projection-operator formalism when a quantum system (a bit or register of bits) is coupled to reservoir. By projecting out the degree freedom reservoir, we derive master equation for system, which reduced Lindblad in Markovian limit, and obtain operator sum representation time evolution. It found that decohered slower reservoir than because information memorized discuss potential importance reservoirs quantum-information processing.

We measured and analyzed the subthreshold degradation of gate-all-around (GAA) silicon nanowire field-effect transistors with length 300/500 nm radius 5 nm. An analytical model incorporating effect interface traps quantitatively explained swing ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</i> ) degradation. A simple electrostatic argument showed that GAA device had smaller values than planar devices for same trap densities.

An exact reduced-density-operator for the output quantum states in time-convolutionless form was derived by solving Liouville equation which governs dynamics of a noisy channel using projection operator method and both advanced retarded propagators time. The formalism developed this work is general enough to model provided specific forms Hamiltonians system, reservoir, mutual interaction between system reservoir are given. Then we apply formulation two-bit gate composed coupled spin systems...

We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting SAQDs, while formation stable SAQDs observed exposed surface Si. have utilized this selectivity demonstrate almost one-dimensional alignment Si stripes. crystallinity also identified by high-resolution transmission electron microscope observation. Our study opens up...

We demonstrate a hybrid process for fabricating one-dimensional wire devices. The is combination of an alignment procedure using dielectrophoresis and subsequent contact metal formation utilizing electrochemical deposition with non-toxic organic-based Au electrolytes. Several devices have been successfully made from GaN nanowires or multi-walled carbon nanotubes (MWCNTs) our technique. that rapid thermal annealing improves the ohmic characteristics by five orders magnitude in case ∼300%...

We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with radius of 5 nm, at various temperatures (s) down to 4.2 K. From -dependence capture/emission time, we obtain energy and charging status trap states. The gate bias dependence scattering coefficient-mobility product extracted from relative fluctuation amplitude drain current are consistent fact that surface roughness is dominant GAA SNWFETs.

We present models of quantum gates based on coupled dots in which a qubit is regarded as the superposition ground states each dot. Coherent control performed by monochromatic light pulse illuminated dots. Considering particular types artificial molecules, we show that easily manipulated with polarization and frequency and, especially, controlled-NOT operation can be possible exploiting electron-electron interaction. To examine decoherence states, discuss electronic relaxation contributed...

In the paper, a regime, where independent treatment of single-electron transistors (SETs) in transient simulations is valid, has been identified quantitatively. It found that, as steady-state case, although temperature varies, each SET can be treated independently, even case when interconnection capacitance large enough. However, value load CL interconnections for SETs approximately ten times larger than that case. A compact model developed circuit simulation by SPICE. The based on...

Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm deposited on an InAs self-assembled wafer to form the devices. The current–voltage characteristics measured from devices, in which a single quantum dot is placed between electrodes, exhibit negative differential resistance effects at temperature above 77 K. They are interpreted as due three-dimensional–zero-dimensional resonant tunneling through dot.

We investigate the transport properties of gate-surrounded Si nanowires using a nonequilibrium Green's function technique. By taking into account ionized-impurity scattering, we calculate functions self-consistently and examine effects scattering on electron densities currents. For nanoscale wires, it is found that, due to impurity local density state profiles lose its interference oscillations as well broadened shifted. In addition, gives rise different transconductance temperature strength...

This work reports an anomalous subthreshold characteristic of the MOSFET for first time. It is observed that does not change as channel length decreases. The cause independent characteristics identified localized pileup dopants near source and drain ends channel. low surface potential this region limits current MOSFET. As a result, ratio on-current to off-current increases reduced, which important parameter low-voltage operation. found with more suitable

The authors have measured addition energy spectra from gate-all-around twin silicon nanowire single electron transistors (SETs) with the radius of 5nm and circular cross sections. Nonmonotonically varying energies are observed interpret them as shell fillings quantum dots three-dimensional harmonic confinement potentials. A 45nm long SET shows 2-1-2-1 filling behavior while a 38nm exhibits 1-2-2-1 filling. These behaviors match calculated degeneracies nanowires different strengths.

A new compact DC/transient single electron transistor model for circuit simulation by SPICE is introduced. This includes a newly developed equivalent approach based on the time-dependent master equation and an exact conductance or transconductance model. The speed of this improved, compared with that previous models.

Nanometer scale mechanical processing of semi-insulating GaAs surface was performed using a cantilever oscillating atomic force microscope. Oscillating probe tips induce bond breaking the and generate nano-meter size patterns. The pattern is shown to be fully controlled by amplitude frequency external modulation voltage piezo-scanner.

We demonstrate the fabrication of nanoelectromagnets and magnetic capture a single nanoparticle. The nanoparticles are extracted from magnetotactic bacteria their diameter is approximately 50 nm. show that nanoparticle captured at each corner serpentine-shaped nanoelectromagnet, maximum field 35 mT (and magnetic-field gradient 4×105T∕m) shown to be created spots nanoelectromagnet. It also there crossover between force diffusion several hundred nm away magnet. This distance comparable average...