A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through located shortest path between source electrodes. dot size calculated from is ∼7 nm, which consistent with of incorporated transistor.

We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on silicon-on-insulator quantum wire side-wall depletion gates. The 30-nm-wide silicon is defined by combination of conventional photolithography process technology, called patterning method, gates two tunnel junctions are formed the doped polycrystalline sidewall. good uniformity suppresses unexpected potential barriers. fabricated device shows clear tunneling...

We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting SAQDs, while formation stable SAQDs observed exposed surface Si. have utilized this selectivity demonstrate almost one-dimensional alignment Si stripes. crystallinity also identified by high-resolution transmission electron microscope observation. Our study opens up...

Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal–semiconductor–metal diode with has been fabricated. Clear staircases observed in the current–voltage characteristics measured from diode, and several peak structures identified differential conductance. These conductance peaks interpreted as due to resonant tunneling energy states dots.

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation K. H. Cho, B. Choi, S. Son, W. Hwang, D. Ahn, B.-G. Park, Naser, J.-F. Lin, J. P. Bird; Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor. Appl. Phys. Lett. 24 January 2005; 86 (4): 043101. https://doi.org/10.1063/1.1854738 Download citation file: Ris (Zotero)...

This study focuses on developing high-performance electrodes by applying micro/nano structures to aluminum mesh and evaluating their electrochemical performance through the electroflotation process. First, most suitable electrode material for was selected, followed application of micro-nano analyze bubble generation size distribution in comparison conventional electrodes. The rate were used predict efficiency, which then validated experiments. developed demonstrated a ninefold reduction...

A novel all-optical gain-controlled two-stage amplifier using optical interleavers for asymmetric bidirectional transmission was proposed and demonstrated in a compact structure. The achieved high constant gain with wide dynamic rage of input signal low noise figure. performance does not depend on the conditions, whether static-state or transient signals, symmetric data traffic transmission. experiments random verified that control amplification functions were successfully combined into this...

Direct transport measurement results of an InAs self-assembled quantum dot system have been reported. The differential conductance characteristics measured from the metal-semiconductor-metal diodes incorporating dots show peaks. energy spectrum is obtained peak positions.

For practical application to multi-functional nanoelectronic devices, single electron transistors (SETs) should have controllable and reproducible characteristics. high temperature operation, recently proposed SET structures depended on somewhat contingent phenomena such as unintentional potential barriers in quantum wires, e-beam irregularity or randomly distributed nanocrystal arrays, so that their device characteristics couldn't be predicted. In this work, SETs with sidewall depletion...

At present, BIST is a major test strategy with features of automatic and possibility at-speed test. But has significant problems for hardware overhead consumes impractical time (test length); in the case CUT it large number primary inputs. We proposed new method called input grouping which helpful to reduce length application. This partitions inputs by considering nodal connectivity respect internal nodes. To achieve this purpose we some definitions points, conditions node be point,...

There have been considerable efforts for the growth of InAs self-assembled quantum dots (QDs), and recently, many interesting works selective on patterned substrates are under progress. Most so far concentrated QDs GaAs substrates. On other hand, silicon is expected to provide mechanisms new zero-dimensional states. We would like present that successfully grown The position control also shown be possible by utilizing silicon/silicon dioxide (Si/SiO/sub 2/)

Single electron tunneling and its application to future VLSI systems has been an important subject extensively studied for the last decade [l]. Many types of materials ideas have applied fabricate implement single devices operating at high temperatures. The self-assembled quantum dot (SAQD) system is one attractive candidates since quality Coulomb islands can be obtained in one-step growth processes. Furthermore, characteristic energy scale would enhance because expected added classical...

Recent rapid progresses in the growth of nano-meter sized self-assembled quantum dots (SAQD's) have opened up possibilities for new devices [1]. In-situ formation ultra-. small without extra lithography steps is expected to give highest quality electronic: states. However, studies direct electronic transport through SAQD's been rare and there only a few indirect measurements such as capacitance [2].