A5077018205- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advanced Data Storage Technologies
- Nanowire Synthesis and Applications
- Physics of Superconductivity and Magnetism
- Thin-Film Transistor Technologies
- Parallel Computing and Optimization Techniques
- ZnO doping and properties
- CCD and CMOS Imaging Sensors
- Transition Metal Oxide Nanomaterials
- Error Correcting Code Techniques
- Quantum Computing Algorithms and Architecture
- Semiconductor materials and interfaces
- Analytical Chemistry and Sensors
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- Organic and Molecular Conductors Research
- Quantum-Dot Cellular Automata
- Anodic Oxide Films and Nanostructures
- Silicon Nanostructures and Photoluminescence
- Electrochemical sensors and biosensors
- Silicon and Solar Cell Technologies
- Electrostatic Discharge in Electronics
Samsung (South Korea)
2011-2020
Macronix International (Taiwan)
2016-2019
Pohang University of Science and Technology
1995-2019
Kwangwoon University
2016-2017
University of Seoul
2002-2011
Najran University
2011
Korea University
1996-2011
University of Patras
2011
University of York
2011
Institute of Science and Technology
1995
This paper reports the simple and facile synthesis, characterization chemical sensing properties of iron oxide (-Fe2O3) nanoparticles. Iron nanoparticles were synthesized by a hydrothermal process characterized in details their morphological, structural compositional properties. The found to be well-crystalline grown very high density which used as efficient electron mediators for fabrication highsensitive phenyl hydrazine sensor. fabricated sensor demonstrated sensitivity 57.88 Am M −1 cm...
We report on measurements of electron transport for the fractional quantum Hall effect (FQHE) at filling factors \ensuremath{\nu}=2/3 and 3/5, in magnetic fields ${\mathbf{B}}_{\mathit{t}}$ tilted by angles \ensuremath{\theta} with respect to normal sample plane. Our device was prepared an density only 2.4\ifmmode\times\else\texttimes\fi{}${10}^{10}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$, but still exhibited a well-developed FQHE 3/5. This exceptionally low allowed us access very total...
We report magnetotransport measurements in a weakly coupled double-layer electron system realized wide quantum well. This has the unique property that distance and coupling between layers can be changed continuously by varying density observe absence of Hall states at odd filling factors. Our results complement earlier experimental work are consistent with recent theoretical model proposed for magnetic-field-driven destruction effect double wells.
We report on our measurements of resistance fluctuations as a function magnetic field B in an ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs heterostructure etched width w=2.5 \ensuremath{\mu}m the integral- and fractional-quantum-Hall-effect regimes. High-frequency are observed near longitudinal (${\mathit{R}}_{\mathit{x}\mathit{x}}$) minima for \ensuremath{\nu}=1, 2, 3, 4, 1/3. The quasiperiods \ensuremath{\Delta}B(\ensuremath{\nu} = integer)...
In a low-mobility ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/InP heterostructure, we find that the quantized Hall resistance plateau, ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$=h/${\mathit{ie}}^{2}$ with i=3, starts developing only when T is below 50 mK. For higher T, plateau and associated minimum in diagonal resistivity ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{x}}$ can be made to appear by tilting sample respect B field. We have...
Vt instability caused by grain-boundary trap (GBT) in the poly-crystalline silicon (poly-Si) channel of a 3D NAND string are comprehensively studied. Experimental results reveal that trapping/detrapping GBT would cause transient cell current with time constant 10us or longer, and this is strongly affected bias history. Sensing offset between program/erase verify (PV/EV) read (RD) "pseudo" charge loss/gain reduces sensing margin. Modified EV, PV, RD schemes suggested to mitigate effect.
We report our transport study of a narrow and low-density two-dimensional electron system (2DES) defined by pair split gates, in the integer (IQHE) fractional quantum Hall effect (FQHE) regimes. The gate-bias-dependent breakdown on high low magnetic field side IQHE FQHE diagonal resistance minima is studied. In case, edge states width comparable to length, single-electron Landau-level picture, cannot explain observed data much wider channels (wide band states) are needed. These wide...
This paper presents an FPGA based real-time lane detection system for automotive applications. To reduce the computational complexity, conventional Canny-Hough algorithm is modified achieving processing. The prototype design realized by using commercialized platform and processing rate enhanced 41% compared to previous algorithm.
We have fabricated two independently tunable quantum point contacts in a parallel configuration, by wet etching 2000-\AA{}-diameter hole the center of constriction split-gate device an ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs heterojunction. The number occupied subbands contact on either side etched can be tuned biasing gate, with each channel exhibiting conductance steps units 2${\mathit{e}}^{2}$/h, independent other. In Hall regime, nearly...
Transient cell current caused by the trapping/detrapping of grain boundary traps in polycrystalline silicon (poly-Si) channel a 3-D NAND string is comprehensively studied this paper. This transient has time constant 10 μs or longer and strongly dependent on bias history. It also affected trap distribution as revealed TCAD simulations. Sensing offset between program verify read results "pseudo" charge loss/gain that reduces sensing margin. The posttreatment poly-Si suggested to mitigate effect.
We newly introduce a novel processing scenario of long short-term memory (LSTM) network for the energy-efficient speech recognition. Compared to conventional single-mode based on fixed computing scheme, proposed LSTM contains multiple operating cells providing attractive tradeoff between recognition accuracy and energy consumption. For case study, state-of-the-art is modified have two types cells, strong weak which are dedicated accuracy-aware energy-aware sequences, respectively. By...
Temperature ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> )-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes amorphous silicon-doped IZO (a-SIZO) channel material were studied. The measured data fit, a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height resistance. coefficients α OMO electrode devices...
Recently, symmetric block-wise concatenated-BCH (SBC-BCH) codes are proposed as strong error-correcting (ECCs) based on hard-decision channel outputs, which is especially suited for storages using NAND flash memories. Targeting energy-efficient memory applications, this paper presents an energy-optimized decoder architecture includes iterative a SBC-BCH code main and low-complexity auxiliary single parity-check (BSPC) code. The opportunistically in action to break the dominant error bound...
This paper presents a novel sparsity-aware CNN accelerator supporting the edge-level image recognition even for noisy images. In proposed accelerator, we characterize class of input noises by utilizing FFT-based on-the-fly noise classifier. The convolution engine then accesses external memory to load dedicated network that provides accurate inference processing detected class. To save energy consumed DRAM accesses, in addition, present filter-level pruning algorithm with memory-reduced...
We report experimental results on charge transport in a low-disorder and low-density one-dimensional electron system. At zero magnetic field (B=0), we observe quantized conductance steps our sample, which is channel longer than 1.2 \ensuremath{\mu}m. B\ensuremath{\ne}0, the integer fractional quantum Hall effect. In extremely high-B limit, find gate tunable transition from effect to an insulating phase oscillations as function of density this B-induced phase. A careful study temperature...
This paper presents an energy-efficient symmetric block-wise concatenated-BCH (SBC-BCH) decoder architecture for energy-starving mobile storages. The proposed 4KB SBC-BCH code remarkably enhances the hard-decision-based error-correcting performance to defer energy-consuming memorysensing operations generating soft-decision values, which are necessary prolong lifetime of flash memories. Thanks powerful hard-decision code, healthy memory condition is extended by 1.4 times. In addition, we...
We investigate a hot-carrier injection-induced program disturb in 3D NAND flash memory. As there exist specific coding patterns, "down-coupling" region and "pre-charge" regions are formed during program-verify the following phases, respectively, inhibit cell strings. A high heating field is built nearby PGM wordline. Hot carriers may inject into cells as Vpgm applied. Soft ramp-down pre-turn-on schemes proposed to mitigate this disturb.
Well-crystalline ZnO nanowires were grown on Si(100) via non-catalytic thermal evaporation process using metallic zinc powder in presence of oxygen. The detailed morphological characterizations by field emission scanning electron microscopy (FESEM) and transmission (TEM) confirmed that the synthesized products are with typical diameter lengths approximately 55 +/- 5 nm several micrometers, respectively high density over silicon substrate. structural high-resolution TEM X-ray diffraction...
This paper presents a novel baseband architecture that supports high-speed wireless VR solutions using 60 GHz RF circuits. Based on the experimental observations by our previous transceiver circuits, efficient is proposed to enhance quality of transmission. To achieve zero-latency transmission, we define an (106,920, 95,040) interleaved-BCH error-correction code (ECC), which removes iterative processing steps in LDPC ECC standardized for near-field communication. Introducing block-level...