A5112555358- Semiconductor materials and devices
- Graphene research and applications
- 3D IC and TSV technologies
- Optical Imaging and Spectroscopy Techniques
- Copper Interconnects and Reliability
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Anesthesia and Neurotoxicity Research
- Semiconductor materials and interfaces
- Functional Brain Connectivity Studies
- Urban Green Space and Health
- Diamond and Carbon-based Materials Research
- Winter Sports Injuries and Performance
- Technology and Human Factors in Education and Health
Eastern Michigan University
2025
University of Notre Dame
2024
National Taiwan University
2020
West China Hospital of Sichuan University
2011
Sichuan University
2011
Abstract Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting scalability logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 discover new interconnect candidates. This approach simultaneously optimizes electronic conductivity, surface scattering time,...
In this brief, the high-quality carbon nanotubes (CNTs) is grown by a chemical vapor deposition (CVD) method, and it used as an ultrafine flip-chip interconnection material in proposed 3-D integrated circuit (3DIC) system. We show patterned growth of multiwalled CNTs on substrate with prestructured bond pads including complete metallization system for electrical characterization. succeeded achieving reliable connections between CNT-covered contact metal during room temperature bonding...
With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient Thermal Expansion ~-2 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> K xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , Resistivity~10 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm ), real 3D integrated circuits (ICs) system with CNTs as high aspect ratio (>25)/small diameters (<; 5 μm) Through Silicon Vias...
High-quality and the large area Carbon Nano-Tube (CNTs) is grown by Chemical Vapor Deposition (CVD) method in different trench structures for potential applications on vertically three-dimension integrated circuits (3DICs). It's unique material properties, including Resistivity (p), thermal conductivity (k), coefficient of expansion (CTE), Young's modulus (E) make it viable monolithic 3D technologies. Besides well-known lower p CNTs easier electron carrier transport, higher k-value CNTs-...