A5059268796- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- 3D IC and TSV technologies
- Electromagnetic Compatibility and Noise Suppression
- Electronic Packaging and Soldering Technologies
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Phase Change Materials Research
- Semiconductor Quantum Structures and Devices
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- 2D Materials and Applications
- Computational Drug Discovery Methods
- Advanced Thermoelectric Materials and Devices
- Advanced Battery Materials and Technologies
- Ga2O3 and related materials
- Graphene research and applications
- Advanced Photocatalysis Techniques
- Monoclonal and Polyclonal Antibodies Research
- Advanced Nanomaterials in Catalysis
Tianjin Chengjian University
2025
Northwest University
2019-2024
Zhengzhou University
2022
Xidian University
2017-2019
ABSTRACT Phase change materials (PCMs) have attracted considerable attention for their energy storage and thermal regulation properties. However, the solid–liquid leakage, low conductivity, single functionality of PCM composites hindered applications, especially. In this paper, phase composite fibrous membranes with highly efficient management ability are prepared by coaxial electrospinning technology polyethylene glycol (PEG) as in core layer polyamide 6 (PA6) supporting materials....
The 3-D multistrata integration puts forward high requirements for signal integrity. shielded-pair through-silicon vias (SPTSVs) proposed in this paper feature superior transmission properties and jamming immunity suitable differential-mode common-mode transmission. Based on the quasi-static field theory, a wideband impedance model of SPTSVs considering proximity effect, line-to-line crosstalk, eddy current effect is derived. parasitic parameters calculated by are further given....
Nowadays, the immature p-GaN processes cannot meet manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, performance wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in paper for first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. results show that compared with conventional single-drift (SDR) diode, DDR proposed...
Two-dimensional germanium is considered a promising new channel material to replace silicon owing its lower effective mass and larger electron–hole mobility. To investigate the transport characteristics of single-layer germanane transistors with gate lengths (Lg) below 5 nm, we utilize an ab initio quantum methodology. It was found that n-type having Lg 3 nm satisfy International Technology Roadmap for Semiconductors (ITRS) requirements on-state current (Ion), delay time, power-delay...
The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. variation oxide-trapped charge (Not) and interface-trap (Nit) with the total dose also investigated. A two-dimensional analytical model threshold voltage (Vth) developed degradation due to irradiation taken into consideration. Based on this model, numerical simulation carried out by Matlab, influence dose, geometry...
An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with degradation due to total dose irradiation taken into consideration. Based on this model, numerical simulation carried out by Matlab, and influence was simulated. Furthermore, evaluate validity results were compared experimental data, good agreements confirmed. Thus, proposed provides reference research reliability NMOSFET.
The carrier transport in uniaxial strained Si N channel metal oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analysed. Based on the total dose irradiation effect, an analytical model for differential capacitance of Nano NMOSFET established. this model, numerical calculation carried out MATLAB. influence geometric parameters and simulated. Meanwhile, simulation results match very well, which validate accuracy model. Therefore, provides a good reference...
The shielded-pair through-silicon vias (SPTSVs) proposed in this paper feature superior transmission properties and high jamming immunity suitable for differential-mode common-mode transmissions. Based on the recursive approximation algorithm, a novel efficient method characterizing electromagnetic-temperature distribution dielectrics is SPTSVs. In addition, considering proximity effects eddy current effect substrate, ultrabroadband parasitic admittance electrical coupling models are derived...
This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous junction manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and performance of this 6H-SiC/GaN heterojunction single-drift-region (SDR) IMPATT diode is simulated at frequencies above 100 GHz. The parameters studied device were compared with conventional diode. results show that p-SiC/n-GaN significantly improved, reflected in enhanced...
A novel efficient method to feature the electromagnetic–thermal distribution at dielectric interface is proposed for through-silicon vias (SPTSVs) using recursive approximation algorithm. Considering proximity and eddy current effects, ultra-broadband admittance electrical coupling models up 300 GHz are presented based on a two-dimensional time-varying field transient polarization mechanism. Collaborative finite element analysis shows that results of model highly agree with those experiments...
The carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional sub-threshold current for differential capacitance Nano NMOSFET established. this model, numerical calculation carried out MATLAB. influence geometric parameters and simulated. Meanwhile, simulation results match experiment result very well, which validates...
An analytical model of substrate hot carrier the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence dose, geometry parameter on current was simulated by Sentaurus-TCAD. Thus, proposed provides good reference for research reliability and application integrated circuit NMOSFET.
Based on the mechanism of charge collection, drift and diffusion, influence incident position, drain bias particle LET (Linear Energy Transfer) value collection NMOS devices is analyzed. It found that strongest electric field in depletion region at 70 nm, maximum transient current 3.43 mA. Drain affects region. The higher is, greater larger peak change does not affect diffusion part; set increase linearly with LET. In addition, for a single transistor, reduction gate length bipolar...