A5080980065- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- GaN-based semiconductor devices and materials
- High voltage insulation and dielectric phenomena
- Carbon Nanotubes in Composites
- Ga2O3 and related materials
- Graphene research and applications
- Electronic Packaging and Soldering Technologies
- Acoustic Wave Resonator Technologies
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Power Transformer Diagnostics and Insulation
- 3D IC and TSV technologies
- Material Properties and Processing
- Epoxy Resin Curing Processes
- Aerosol Filtration and Electrostatic Precipitation
University of Bologna
2018-2024
Laboratori Guglielmo Marconi (Italy)
2023
The reliability of high-voltage (HV) integrated circuits (ICs) can be significantly affected by space charge accumulation at the interface between passivation layer and epoxy molding compound (EMC) which acts as encapsulation material. incorporation moisture, increases EMC conductivity, lead to a stronger distortion electric field with consequent breakdown instability. Moreover, distance integrated-circuit active regions from peripheral bond pads wire would require thorough optimization. To...
An interdigitated capacitor embedded in the EMC has been realized and characterized under controlled humidity conditions by applying a DC step voltage monitoring leakage current as function of time. Both experimental characterization TCAD simulations dry wet samples have carried out to fully understand involved charge transport mechanisms. The anomalous increase with time is explained assuming build-up space directly induced high-injection at metal electrodes. assumption confirmed simulations.
An electroactive passivation for high-voltage diodes with bevel termination has been investigated based on diamondlike carbon (DLC) films. Variations of the DLC properties, i.e., conductivity and geometry, have by experiments numerical simulations to purpose gaining an insight their influence diode leakage current breakdown voltage. The role played DLC/Si interface characterizing metal-DLC-Si devices. Both boron nitrogen doping investigated, a TCAD setup provided accounting main transport...
The electron effective masses of ScxAl1−xN and AlxGa1−xN, two the most promising wide bandgap materials for power RF electronic applications, have been calculated using predictions density functional theory (DFT). More specifically, unfolding technique has adopted to extract band structure alloys under investigation. It found that AlGaN m∗ approximately follow Vegard law. On contrary, due larger amount disorder inside crystal, ScAlN shows a non-monotonic change as function Sc concentration,...
The presence of space charge and leakage current within the epoxy-based mold compound (EMC) used as encapsulation material for high-voltage integrated circuits (HV-ICs) can significantly impact long-term reliability performance devices when finally packaged. Moreover, role moisture, even if very little absorbed by EMCs, lead to a strong increase EMC conductivity, resulting in larger electrostatic potential distortion compared with case perfectly dry insulating package. To directly measure...
The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role conductivity polarization DLC layer on blocking capability a p-n has been explained recently, behavior still needs be addressed. For this purpose, diode leakage current was measured large area diodes with negative bevel coated by typical industrial range between 300 413 K. An unusual deviation from...
Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC TCAD framework addressed, with special attention role played bevel coating large-area high-voltage diodes. The simulations are nicely compared experiments, giving rise detailed explanation by conductivity on diode performance.
The sensitivity of discrete large-area power devices to the design aspects termination region and charging effects electroactive passivation layer on top is presented in this work. junction featuring variation lateral doping (VLD) revisited for such by focusing interaction with material top. To purpose, an ideal dielectric (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) compared differently-doped diamond-like carbon (DLC)...
Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) actually represent one of the best candidates for medium-high power and radio frequency applications. As they operate at large bias electric fields, a comprehensive analysis high-field transport properties is fundamentals, as hot electrons are expected to play relevant role device reliability. In this perspective, Technology Computer-Aided Design (TCAD) simulations can be very useful tool understanding phenomena dominating...
This paper investigates a method to increase the holding voltage in conventional Silicon Controlled Rectifier (SCR) for ESD power clamping. Specifically, SCR-LDMOS device with 150 V trigger and 9 is investigated assuming application of high-energy electron irradiation. Based on previous experimental TCAD investigations, most relevant kind defects accounted at different irradiation levels clearly showing an up 16 without any other significant change TLP characteristics. The role trapped...
Diamond-Like Carbon (DLC) is well established material for the passivation of high voltage negative beveled power diode. In our previous works, conduction mechanism DLC has been carefully described through characterization and physical modeling Metal-Insulator-Semiconductor (MIS) structures. addition, effects on breakdown leakage current have clarified comparing available experiments with numerical simulations. However, role played by temperature dependence still lacking. this work, it...