Vincent Guigoz

ORCID: 0000-0002-0806-2412
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About
Contact & Profiles
Research Areas
  • Advanced Photocatalysis Techniques
  • Ga2O3 and related materials
  • Astro and Planetary Science
  • Isotope Analysis in Ecology
  • GaN-based semiconductor devices and materials
  • Perovskite Materials and Applications
  • Multiferroics and related materials
  • Planetary Science and Exploration
  • High-pressure geophysics and materials
  • Laser-induced spectroscopy and plasma
  • Gas Sensing Nanomaterials and Sensors
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Graphene research and applications
  • Astrophysics and Star Formation Studies
  • Electrocatalysts for Energy Conversion
  • MXene and MAX Phase Materials

Centre National de la Recherche Scientifique
2020-2025

Université Côte d'Azur
2024-2025

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
2024

Institut Jean Lamour
2020-2021

Laboratoire Réactions et Génie des Procédés
2020-2021

Université de Lorraine
2020

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2017

CEA Grenoble
2017

CEA LETI
2017

Institut polytechnique de Grenoble
2017

Abstract Evaporation or freezing of water-rich fluids with dilute concentrations dissolved salts can produce brines, as observed in closed basins on Earth 1 and detected by remote sensing icy bodies the outer Solar System 2,3 . The mineralogical evolution these brines is well understood regard to terrestrial environments 4 , but poorly constrained for extraterrestrial systems owing a lack direct sampling. Here we report occurrence salt minerals samples asteroid (101955) Bennu returned...

10.1038/s41586-024-08495-6 article EN cc-by Nature 2025-01-29

Abstract The OSIRIS‐REx mission returned a sample of regolith from the carbonaceous asteroid Bennu in September 2023. We present preliminary situ investigations petrology and petrography selected particles ranging size 0.5 to 3 mm. Using combination optical electron beam techniques, we investigate whole specimens polished sections belonging morphologically visually distinct categories particles. find that morphological differences are reflective petrographic petrologic differences, leading...

10.1111/maps.14335 article EN cc-by-nc-nd Meteoritics and Planetary Science 2025-03-20

Molecular beam epitaxy technique has been used to deposit a single layer and bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ ex-situ measurements show that the layered grows in scalable manner substrate reveals characteristics stoichiometric 2H-phase. The exhibits polycrystalline features with domains separated by defects boundaries. Temperature magnetic field dependent resistivity unveil carrier hopping character described within two-dimensional variable range...

10.1063/1.4973519 article EN Applied Physics Letters 2017-01-02

Abstract Carbonates, as secondary minerals found in CM chondrites, have been widely employed for reconstructing the composition of fluids from which they precipitated. They also offer valuable insights into hydrothermal evolution their parent bodies. In this study, we demonstrate that high‐resolution cathodoluminescence (HR‐CL) analyses calcites derived brecciated Cold Bokkeveld CM2 chondrite can effectively reveal subtle compositional features and intricate zoning patterns. We identified...

10.1111/maps.14225 article EN cc-by Meteoritics and Planetary Science 2024-06-11

GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The well thickness was set in the 6–8 nm range to favor photoluminescence emission of indirect excitons. Indeed, such excitons are known be spatially due presence internal electric field which separates electron and hole wave functions. growth conditions optimized view minimizing peak broadening. In particular, impact temperature (up 900 °C) surface morphology, structural, properties...

10.1063/5.0182659 article EN cc-by Journal of Applied Physics 2024-03-01

GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The well thickness was set in the 6-8 nm range to favor photoluminescence emission of indirect excitons. Indeed, such excitons are known be spatially indirect, due presence internal electric field which separates electron and hole wave functions. growth conditions optimized view minimizing peak broadening. In particular, impact temperature (up 900{\deg}C) surface morphology,...

10.48550/arxiv.2310.13323 preprint EN cc-by arXiv (Cornell University) 2023-01-01
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