Charge transport and electroluminescence mechanisms in Si-rich Si oxynitride/silicon oxide (SRON/SiO2) superlattices deposited on p-type substrate are reported. The superlattice structures were by plasma-enhanced chemical-vapor deposition subsequently annealed at 1150 °C to precipitate crystallize the excess into nanocrystals. dependence of electrical conduction applied voltage temperature was found be well described a Poole-Frenkel mechanism over wide range. On other hand, observed SRON...

Abstract We report a joint experimental and theoretical study of the lattice dynamics cubic Tb 2 O 3 . Up to 16 optical Raman‐active modes have been observed with polarized unpolarized Raman scattering measurements on high‐quality single crystal. The measured wavenumbers compared those other rare‐earth (RE) related sesquioxides (C‐type or bixbyite) structure. First‐principles calculations allowed us assign symmetry experimentally modes. Additional lattice‐dynamical RE Dy , Gd Eu Sm indicate...

By using ZnO thin films doped with Ce, Tb or Eu, deposited via radiofrequency magnetron sputtering, we have developed monochromatic (blue, green and red, respectively) light emitting devices (LEDs). The rare earth ions introduced doping rates lower than 2% exhibit narrow intense emission peaks due to electronic transitions in relaxation processes induced after electrical excitation. This study proves zinc oxide be a good host for these elements, its high conductivity optical transparency the...

The optical, electrical and electro-optical properties of metal-insulator-semiconductor (MIS) devices containing Si-rich silicon nitride (SRN) films are reported. photoluminescence optical absorption characterization evidences that optically active centers present a defective nature. As consequence, Poole-Frenkel type transport mechanism is considered, which in agreement with the results. performance has been found to be strongly modulated by poly-Si electrode transmittance. After taking...

Fabrication and organosilane-functionalization characterization of nanostructured ITO electrodes are reported. Nanostructured were obtained by electron beam evaporation, a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area comparison with thin-film observed atomic force microscopy, implying higher electroactive for thus detection levels. To investigate the detectability, chemical performed. The formation...

We report the usage of organic materials as n-type layers in kesterite-based thin film solar cell for partial substitution CdS buffer layer.

Herein, the fabrication of UV‐blue selective transparent solar cells based on ultrathin (<30 nm) intrinsic hydrogenated amorphous silicon films (a‐Si:H) as absorber and using a fully inorganic architecture is reported, metal‐oxide thin carrier contacts electrical contacts. These devices present photovoltaic effect high average visible transmittance (AVT), showing their potential candidates for implementation energy harvester. Potential applications range from Building‐Integrated PV to...

The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders magnitude difference in current. Both the high state (HRS) and low (LRS) were induced by either sweeping or pulsing voltage, observing some differences HRS. Finally, charge transport mechanisms dominating pristine, HRS, LRS analyzed depth, obtained structural parameters suggest a partial re-oxidation conductive nanofilaments reduction effective area.

The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis redox active molecules. ITO films were fabricated using electron beam evaporation at different substrate temperatures and subsequently annealed promoting their crystallization. morphology deposited material was monitored scanning microscopy, confirming deposition either thin or nanowires, depending on temperature....

In the last few years, emergence of studies concerning resistive switching (RS) phenomenon has resulted in finding a large amount materials being capable acting as an active layer such devices, i.e., where change resistance takes place. Whereas normal operation consists electrical readout modified state device after writing, electro-photonic approaches seek involvement light these be it either for Set or Reset operations readout. We propose this work silicon nanocrystal multilayers (Si NC...

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low and a defect-related Poole-Frenkel mechanism high resistance. Nevertheless, some features the Al top-electrode are generated during initial electroforming, suggesting material modifications. An in-depth microscopic study nanoscale has performed after electroforming process,...

Abstract The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are attractive material which, by means the quantum confinement effect, allow attaining engineered bandgap visible emission from Si controlling NC size. In this work, SiO 2 ‐embedded NCs employed as active layer within light‐emitting device structure. It demonstrated that use additional thin 3 N 4 interlayer...

We report on light-activated electroforming of ZnO/p-Si heterojunction memristors with transparent indium tin oxide as the top electrode. Light-generated electron-hole pairs in p-type substrate are separated by external electric field and electrons injected into active ZnO layer. The additional application voltage pulses allows achieving different resistance states that end up realization low state (LRS). This process requires much less compared to dark conditions, thus avoiding undesired...

In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute observed EL. Symmetric square voltage pulses (50-μs period) notably enhance EL by about one order magnitude. addition, control pulse parameters (accumulation inversion times) modify lineshape, long times (i.e., short accumulation suppressing contribution. The...

Light emitting Al-Tb/SiO2 nanomultilayers (NMLs) for optoelectronic applications have been produced and characterized. The active layers were deposited by electron beam evaporation onto crystalline silicon substrates, alternatively evaporating nanometric of Al, Tb, SiO2. After deposition, all samples submitted to an annealing treatment 1 h in N2 atmosphere at different temperatures, ranging from 700 1100 °C. Transmission microscopy confirmed the NML structure quality, complementing...

Transparent conducting oxides have excellent electrical and optical properties that can be exploited to enhance the performance of devices for a large variety applications such as integrated optoelectronics, biosensing, light detection or resistive memories. In addition, they also shown ability in silicon CMOS therefore potential mass production. this work, we will focus on ITO ZnO different application fields memristors biosensing.

Multilayers consisting of silicon nanocrystals (Si NCs) and SiO 2 are successfully fabricated by electron beam evaporation, using pure Si targets in an oxygen‐rich atmosphere for alternately depositing silicon‐rich oxide (SRO) layers barriers, respectively. A post‐deposition annealing process is carried out at different temperatures order to achieve the precipitation form nanocrystals. The stoichiometry determined X‐ray photoelectron spectroscopy, which confirms controlled oxidation attain...

The increasing need for efficient memories with integrated functionalities in a single device has led the electronics community to investigate and develop different materials resistive switching (RS) applications. Among these materials, well-known Si nanocrystals (NCs) have demonstrated exhibit RS properties, which add wealth of phenomena that been studied on this model material platform. In work, we present ZnO/Si NCs/p-Si devices whose resistance state can be electrically read at 0 V under...

Electron beam evaporation was employed in order to fabricate Al- and Tb-codoped Si oxide multilayers via the delta-doping approach. This methodology permits control of rare-earth (RE) separation along growth direction with nanometric resolution. To investigate RE direction, different SiO₂ thicknesses were studied. After deposition, samples submitted annealing processes for 1 h N², at temperatures ranging from 700 1100 °C. Photoluminescence experiments reveal narrow...

In this work, the fabrication and structural, optical electrical properties of Al‐Tb/SiO 2 nanomultilayers have been studied. The were deposited by means electron beam evaporation on top p‐type Si substrates. Optical characterization shows a narrow strong emission in green spectral range, indicating activation Tb 3+ ions. revealed conduction limited electrode, although trapped‐assisted mechanisms can also contribute to transport. electroluminescence analysis from ions, promising result...

Journal Article Resistive Switching Studies of ReRAM Devices by In-Situ TEM Get access Gemma Martín, Martín MIND/IN2UB, Departament d'Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Martí Franquès 1, 08028 Spain Search for other works this author on: Oxford Academic Google Scholar Mireia B González, González Institut Microelectrònica IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Aïda Varea, Varea Oriol Blázquez, Blázquez Giovanni Vescio, Vescio Francesca Campabadal, Campabadal...

Ce-doped SiOxNy and SiAlON matrices are promising materials for blue LED applications. The uniqueness of this approach stems from the fact that SiOxNy, as a host, combines specific properties individual SiOx SiNy like solubility, efficient emission, 5 eV gap, with broad excitation range 400 nm to 500 Ce3+ ions due 4f-5d transitions. Furthermore, co-doping aluminum enhances emission. In work, we fabricated electroluminescent devices using SiOxNy:Ce3+ SiAlON:Ce3+ active layers investigated...