This brief presents a CMOS voltage reference for Internet-of-Things applications, which requires ultra-low power and high insensitivity to variation from ambient energy harvesting. proposed novel self-regulating circuit significantly diminish the line sensitivity (LS) of supply without using any amplifiers or passive components. All transistors in this design work subthreshold region low operation. The is fabricated standard 0.18-μm process. measurement results show that, could provide an...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTRole of Interfacial Tension in the Formation and Detachment Air Bubbles. 1. A Single Hole on a Horizontal Plane Immersed WaterJ. N. Lin, S. K. Banerji, H. YasudaCite this: Langmuir 1994, 10, 3, 936–942Publication Date (Print):March 1, 1994Publication History Published online1 May 2002Published inissue 1 March 1994https://pubs.acs.org/doi/10.1021/la00015a054https://doi.org/10.1021/la00015a054research-articleACS PublicationsRequest reuse...

This article presents a 6.78-MHz single-stage dual-output regulating rectifier for miniaturizing the true wireless devices. The proposed topology realizes ac-dc power conversion and voltage regulation simultaneously in one single stage, using only four on-chip transistors, thereby reducing chip area off-chip components improving system efficiency. We integrate high (HV) low (LV) transistors HV LV output voltages, respectively. two independent three-level current-wave modulation (CWM)...

This article presents a 6.78-MHz single-stage regulating rectifier with hysteretic control and current-wave modulation (CWM) techniques for wireless power receiver applications. The proposed realizes ac-dc rectification dc-dc regulation in single-power stage, thus improving the efficiency reducing system volume. together CWM technique achieves much accelerated load-transient response compared to recently developed multicycle pulsewidth techniques. design complexity is significantly reduced....

This paper reports on a translation impact study project in the Chinese city of Guangzhou. The involved firstly presenting two renditions (presumably foreignised one and domesticated one) same English source text to group subjects inviting them respond 10 preconceived statements about each rendition. Their responses were then statistically processed order answer these research questions: (1) are significantly different? (2) if so, there any significant correlations between rendition? first...

Energy harvesting technology provides a promising choice to replace the batteries used in modern wearable devices. This paper describes new kind of piezoelectric energy devices aiming for high power output at low frequency with broad bandwidth. By accessing performance device different frequencies, we have demonstrated two 10 microwatts level. A complete system is also designed adjust voltage practical applications. from human motion has been successfully harvested an LCD and LED lamp. Those...

In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring gate variance (ΔC) with different pulse height, induced SiNX dielectric layer or at SiNX/AlGaN interface is revealed. Based on results, a model traps HEMTs proposed. The threshold voltage (Vth) instability believed to be correlated presence of these interface. Furthermore, density before and after step-stress applied drain electrode...

A dual-output CMOS voltage reference is presented for ultra-low power applications that require two or more different references. The VREF1 designed by employing the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> difference between devices to compensate temperature coefficient (TC) of thermal voltage. xmlns:xlink="http://www.w3.org/1999/xlink">REF2</sub> generated feeding a current mirrored from first voltage's supply into...

Novel 2 × mm2 MEMS capacitive plates with two cavities (two capacitors) have been designed, modeled and fabricated for power harvesting by utilizing residual mechanical vibration in the environment using electrostatic mechanism. The device is unique use of an innovative two-cavity design electroplated nickel as main structural material. When capacitance increases one capacitor, it will decrease other. This allows us to both up down directions generate energy. has achieved higher average than...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTRole of Interfacial Tensions in the Formation and Detachment Air Bubbles. 2. A Single Orifice on an Inclined Plane Immersed WaterJ. N. Lin, S. K. Banerji, H. YasudaCite this: Langmuir 1994, 10, 3, 943–948Publication Date (Print):March 1, 1994Publication History Published online1 May 2002Published inissue 1 March 1994https://pubs.acs.org/doi/10.1021/la00015a055https://doi.org/10.1021/la00015a055research-articleACS PublicationsRequest reuse...

A novel electrostatic MEMS capacitors array with dual capacitive cavities for energy harvesting from environmental vibration has been developed. This paper presents the new design, fabrication, modeling, and complete set of characterization a harvester cavities, which achieves considerably higher generation than similar devices single capacitor. Rocking instability, that is, perturbations may result in movable plates not parallel to fixed plates, plate studied based upon comprehensive...

This paper presents a single-stage wireless charger using current-mode active rectifier with accurate output current regulation for efficient charging. As we know, the processes an AC input voltage/current and pulsing which are difficult to be accurately sensed on chip small area power overheads. The proposed sensing technique uses replica stage in parallel main stage. It consists of two cross-connected PMOS transistors, filtering capacitor, dynamic load. In addition, by adaptively tuning...

A CMOS sub-bandgap voltage reference (sub-BGR) with single BJT and two resistors is presented in this paper. The proposed sub-BGR structure generates the complementary-to-absolute-temperature (CTAT) not only occupying small chip area consuming nA-level current, but also achieving low sensitivity to current mirror mismatches. CTAT a scaled emitter-base of proportional-to-absolute-temperature (PTAT) based on stacking ΔVGS sub-threshold MOSFETs. circuit implemented standard 0.18μm process,...

This paper presents a 6.78-MHz regulating rectifier for wireless powering. The receiver efficiency is enhanced and the die area reduced by achieving both AC-DC rectification DC-DC regulation in one single stage. Different from recent relatively slow multi-cycle pulse-width modulation techniques, real-time hysteretic control technique together with proposed current-wave (CWM) achieves much faster load-transient response rectifier. Fabricated 0.18-μm CMOS process, outputs 3.3-V regulated...

Abstract Large bubbles emerge from porous membranes with small pores because the emerging spread on membrane surface before they detache surface. If sessile bubble contact angle (θ) is less than 45°, no spreading occurs, and size determined by of hole. Even in this case, equivalent diameter (of spherical bubble) significantly larger pore due to formation mechanism. θ &gt; base a bubble, which depends value θ, independent size. The could be greater order magnitude diameter. same principle...

This work shows the complicated dynamic responses of MEMS parallel plate capacitor for power harvesting resulting from onset rocking instability. Rocking instability or symmetry breaking is a relatively new area study as it pertains to It important because decreases total amount that can be harvested especially when tips moving make contact with fixed plate. Two different designs characterized by number variable capacitors are studied. Power achieved motion under external forces vibration....

Transient capacitance measurement is used to study the trap behaviors in AlGaN/GaN MIS-HEMTs: 1) By measuring transfer characteristics before and after pulse cycles applied on gate electrode MIS-HEMTs, threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) instability induced by investigated; 2) The change of density step-stress drain also quantitatively analyzed.

We have designed, modeled, fabricated and tested novel MEMS variable capacitors with two air cavities (two capacitors) for electrostatic power harvesting utilizing mechanical vibration in environment. The device is unique the use of an innovative two-cavity design electroplated nickel as main structural material, which allows using both up down directions to generate energy. prototype been successfully surface micromachining. initial testing investigating electrical dynamic behaviors...

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Business English was officially approved to be an undergraduate major in China 2007, which set off throughout a boom of establishing as majors educational institutions. Students swarm towards schools with programs assuming their high job prospects after graduation. This study is follow-up comparing the return education investment for two groups graduates English, one group graduating 2013 first Guangzhou, other 2017. Online surveys were conducted investigate whether urban and rural students...

The electrical property degradation of AlGaN/GaN MIS-HEMT, including output characteristics, a higher ON-resistance and threshold voltage negative shift (~1.8V), is correlated with near-interface trap behaviours in SiN/AlGaN.These traps are quantitatively characterized using the transient capacitance measurement, from which we could estimate densities SiN/AlGaN.Measurements reveal density before step-stress 1.404×10 15 cm -3 an increased 1.709×10 after step-stress.A hot electron injection...

By measuring transfer characterises before and after a given number of specific pulse cycles applied on the gate electrode for AlGaN/GaN MIS-HEMTs, threshold voltage (Vth) instability is investigated.Furthermore, by change in transient capacitance (ΔC) under different pulses, effect interface traps MIS-HEMTs studied.These induced states are believed to be responsible Vth MIS-HEMTs.