Lu Zhang

ORCID: 0000-0002-2308-1080
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About
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Research Areas
  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Carbon Nanotubes in Composites
  • Nuclear Materials and Properties
  • Perovskite Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Nuclear reactor physics and engineering
  • Nuclear Engineering Thermal-Hydraulics
  • Advanced Photocatalysis Techniques
  • Innovative Microfluidic and Catalytic Techniques Innovation
  • Graphene and Nanomaterials Applications
  • Electrohydrodynamics and Fluid Dynamics
  • Advanced Sensor and Energy Harvesting Materials
  • Nanowire Synthesis and Applications
  • High voltage insulation and dielectric phenomena
  • Chalcogenide Semiconductor Thin Films
  • Heat transfer and supercritical fluids
  • Embedded Systems and FPGA Applications
  • Ga2O3 and related materials
  • Radiation Effects in Electronics
  • Electrical Fault Detection and Protection
  • Magneto-Optical Properties and Applications
  • Dielectric materials and actuators
  • Luminescence and Fluorescent Materials

University of Groningen
2024-2025

Chinese Academy of Sciences
2019-2023

Shanghai Institute of Optics and Fine Mechanics
2023

Institute of Modern Physics
2019-2023

University of Jinan
2023

Inspur (China)
2022

Cloud Computing Center
2022

Shanghai University of Engineering Science
2019-2022

Nanjing University of Information Science and Technology
2021

Institute of Microelectronics
2021

Microreactor technology is seen as a promising approach to achieve green and sustainable synthesis in chemical fields because of the significant process intensification fine control over reaction parameters caused by miniaturization reactor scale. The incorporation solid catalysts packed bed microreactors opens numerous opportunities for efficient heterogeneous catalysis that plays pivotal role many industrially relevant processes. In this review, recent development use versatile research...

10.3390/chemistry7020029 article EN cc-by Chemistry 2025-02-24

Black phosphorus, an emerging layered material, exhibits promising applications in diverse fields, ranging from electronics to optics. However, controlled synthesis of black particularly its few-layered counterparts, is still challenging, which should be due the unclear growth mechanisms phosphorus. Here, taking most commonly used Sn-I assisted phosphorus as example, we propose a mechanism crystals by monitoring reactions and analysing as-synthesized products. In proposed mechanism,...

10.3389/fchem.2019.00021 article EN cc-by Frontiers in Chemistry 2019-01-27

Abstract An experimental study on the effect of hexagonal boron nitride ( h ‐BN) underlay and cap layers excitonic dynamics in monolayer WS 2 is reported. A flake fabricated by mechanical exfoliation. By using a dry transfer technique, three regions sample are obtained: directly SiO , ‐BN, sandwiched two ‐BN flakes. Photoluminescence measurements show higher yield narrower linewidth ‐BN/WS / region. Transient absorption reveal that top layer enhances exciton formation, prolongs lifetime,...

10.1002/admi.201901307 article EN Advanced Materials Interfaces 2019-10-22

Abstract Packed bed microreactors offer a promising platform for intensifying heterogeneously catalyzed reactions. To understand hydrodynamics therein, N 2 or water flow was investigated experimentally through packed with glass beads in this work, corresponding to microreactor particle diameter ratio ( D / d ) of 1.29–25.12. The porosity single pellet string < 1.866) agrees the literature's theoretical equation. For larger ratios, an empirical correlation is proposed address dense packing...

10.1002/aic.18640 article EN cc-by AIChE Journal 2024-11-20

Recently, transition metal dichalcogenides have been extensively studied as new functional materials for electronic and optoelectronic applications. Most initial efforts focused on several members of this material family with 2H lattice structure. ReSe2 a less-study dichalcogenide has gained significant momentum due to its 1T structure in-plane anisotropic optical properties. Extensive shown promising future novel optoelectronics. However, little was known about the photocarrier dynamics in...

10.1364/oe.26.021501 article EN cc-by Optics Express 2018-08-06

Abstract Few‐layer molybdenum disulfide (MoS 2 ) was prepared by liquid phase exfoliation with in‐situ modification as a nanofiller for polypropylene (PP). Scanning and transmission electron microscopies (SEM, TEM) showed uniform dispersion excellent adhesion of MoS within the PP matrix. When centrifuged at 1000 rpm, mechanical properties composite were greatly improved adding only 0.5 wt.% . The yield strength, bending modulus, impact strength increased 2.3%, 8.9%, 44.03%, respectively....

10.1002/pc.27167 article EN Polymer Composites 2022-11-21

We show that bilayer α-phase In2Se3 and monolayer MoSe2 form a type-I band alignment, with both the conduction minimum valence maximum located in MoSe2. Samples were fabricated by two-step chemical vapor deposition method. The photoluminescence yield of heterostructure sample was found to be similar MoSe2, indicating lack an efficient charge transfer from In2Se3. This is further confirmed observation photocarrier lifetime showing layer separation electrons holes. Efficient energy observed...

10.1021/acsomega.8b01532 article EN publisher-specific-oa ACS Omega 2018-09-26

We fabricated a van der Waals heterostructure by stacking together monolayers of MoS2 and ReSe2. Transient absorption measurements were performed to study the dynamics charge transfer, indirect exciton formation, recombination. The results show that form type-II band alignment with conduction minimum valance maximum located in ReSe2 layers, respectively. By using different pump-probe configurations, we found electrons could efficiently transfer from holes along opposite direction. Once...

10.1364/oe.27.017851 article EN cc-by Optics Express 2019-06-12

Charge-transfer excitons are formed by photoexcited electrons and holes following charge transfer across a heterojunction. They important quasiparticles for optoelectronic applications of semiconducting heterostructures. The newly developed two-dimensional heterostructures provide new platform to study these excitons. We report spatially temporally resolved transient absorption measurements on the dynamics charge-transfer in MoS2/WS2/MoSe2 trilayer heterostructure. observed non-classical...

10.1039/d0nr01924k article EN Nanoscale 2020-01-01

A new ‘seeding’ approach for the intercalation of protonated 1,10-phenanthroline into layered NiPS<sub>3</sub> by using dopants as reaction active sites is proposed.

10.1039/d0cc00636j article EN Chemical Communications 2020-01-01

We reported a time-resolved study of quantum-mechanical tunneling holes between two MoSe2 monolayers that are separated by monolayer WS2 energy barrier. Four-layer heterostructures MoSe2/WS2/MoSe2/graphene, as well control samples, were fabricated mechanical exfoliation and dry transfer techniques. To time-resolve the hole process, an ultrashort laser pulse was used to excite electrons in both layers. By utilization graphene layer eliminate carriers third layer, first is selectively...

10.1021/acsami.1c02913 article EN ACS Applied Materials & Interfaces 2021-03-05

Ordered arrays of heterojunctions comprising Ni nanowires, multiwalled carbon nanotubes, and amorphous nanotubes (a-CNTs) connected end to were fabricated. The current-voltage (I-V) characteristics the embedded in measured by a conductive atomic force microscope. It was found that although electrical signals Schottky contacts some buried those long a-CNT segments, other played central role made corresponding possess rectifying I-V characteristics. quantitative analysis showed thermionic...

10.1063/1.2404972 article EN Applied Physics Letters 2007-01-15

This work presents a comprehensive study of the influence channel engineering on switching, high frequency characteristics, and circuit-level performance carbon nanotube field-effect transistors (CNTFETs). At device level, new CNTFETs with single halo doping (SH-CNTFETs) have been proposed. The impact SH implantation cutoff (fT), switching delay (τ), on/off current ratio (Ion/Ioff) has explored it is revealed that SH-CNTFETs improved radio (RF) characteristics. circuit using Hailey...

10.1088/0268-1242/30/5/055018 article EN Semiconductor Science and Technology 2015-04-27

Very fast transient overvoltage (VFTO) engenders great threat to gas‐insulated switchgear (GIS) in ultra‐high‐voltage (UHV) power system. A novel conical voltage sensor was developed based on combination of the divider and coaxial integral device measure VFTO UHV GIS. The results indicate that structure can make wave impedance translate smoothly from high‐voltage arm cable, which significantly reduces refraction reflection VFTO. optimum value capacitance is between 100 200 pF, determined by...

10.1049/iet-smt.2017.0341 article EN IET Science Measurement & Technology 2018-01-29

The exciton dynamics in a WS 2 monolayer with strain are studied by transient absorption measurements. We measure the differential transmission signal from as function of probe wavelength at different levels applied to sample. spectrum has positive maximum value about 614 nm and shows no significant dependence. By time-resolving signal, we find that minimal effect on formation process. However, lifetime is significantly reduced strain. These results provide useful information for...

10.1088/1674-1056/28/8/087201 article EN Chinese Physics B 2019-08-01

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on non-equilibrium Green’s functions (NEGF) solved self - consistently with Poisson’s equations. The calculated results show that CNTFETs exhibit superior compared graphene nanoribbon (GNRFETs), such as better control ability gate channel, higher drive current lower subthreshold leakage current, subthreshold-swing (SS). Due to larger...

10.5573/jsts.2014.14.5.615 article EN JSTS Journal of Semiconductor Technology and Science 2014-10-30

After the discovery of graphene in 2004, two dimensional (2D) materials have fascinated a lot view due to excellent properties. Nowadays, research on 2D has spread other graphene-like layer structured materials, especially transition metal dichalcogenides (TMDCs). Tin disulfide (SnS 2 ) is kind TMDCs with sizable bandgap. Here we introduce few-layer SnS field-effect transistors (FETs) fabricated using micromechanical exfoliation method. The FETs show n-type behavior, on/off ratio exceeding...

10.1088/1742-6596/2356/1/012017 article EN Journal of Physics Conference Series 2022-10-01
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