A5101829349- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Laser-Matter Interactions and Applications
- Silicon Carbide Semiconductor Technologies
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
- Electrospun Nanofibers in Biomedical Applications
- 3D Printing in Biomedical Research
- Intracranial Aneurysms: Treatment and Complications
- Spectroscopy and Quantum Chemical Studies
- Advanced Fiber Laser Technologies
- Photonic and Optical Devices
- Laser-Plasma Interactions and Diagnostics
- Soft Robotics and Applications
- Constructed Wetlands for Wastewater Treatment
- Advanced Materials Characterization Techniques
- Radiation Effects in Electronics
- Micro and Nano Robotics
- Additive Manufacturing and 3D Printing Technologies
- Mass Spectrometry Techniques and Applications
Shaanxi Normal University
2023
National Tsing Hua University
2016-2021
Hunan Agricultural University
2021
University of Shanghai for Science and Technology
2018
GlobalFoundries (United States)
2012
IBM (United States)
2012
Nanjing University
2010
Nanyang Technological University
2002-2005
An equivalent oxide thickness of ~0.53 nm, gate leakage current density ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> A/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at V <sub xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> + 1 V, I xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio 10 xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> , subthreshold swing...
We study ionization of atoms in strong elliptically polarized laser fields numerically and analytically. focus on the effects ellipticity offset angle photoelectron momentum distribution. This is considered to encode time information tunneling attoclock experiments. The calculated increases with decrease ellipticity, but along major axis polarization related this changes slowly, agreement With a Coulomb-included strong-field model, scaling laws for dependence relevant components are...
A hole mobility of ~650 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V-s at N <sub xmlns:xlink="http://www.w3.org/1999/xlink">inv</sub> = ~ 0.4 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , a gate leakage current density ~10 xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> A/cm V xmlns:xlink="http://www.w3.org/1999/xlink">G</sub>...
Replacement metal gate (RMG) process requires fill with low resistance materials on top of work function tuning metals. Conventional titanium (Ti)-aluminum (Al) based RMG scheme for formation becomes challenging further length scaling 20nm node and beyond. In this work, we have demonstrated competitive at smaller than 25nm L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gate</sub> using a novel cobalt (Co)-aluminum extreme scaling. Challenges...
The superior transport properties of III–V materials are promising candidates to achieve improved performance at low power. This paper examines the module challenges in advanced CMOS or beyond 10 nm technology node, and reports VLSI compatible epi, junction, contact gate stack process modules with Xj&#60;10nm, N<inf>D</inf>=5×10<sup>19</sup> cm<sup>−3</sup>, ρ<inf>c</inf>= 6Ω.µm<sup>2</sup> Dit = 4×10<sup>12</sup> eV<sup>−1</sup>...
This brief reports a study of charge injection-induced edge trapping in the gate oxide overlapping drain extension which has an impact on leakage current. The is determined for thickness 6.5, 3.9, and 2.0 nm by using simple approach to analyze change band-to-band tunneling current measured with three-terminal gate-controlled-diode configuration. strong dependence thickness, it different from over channel. A plausible explanation both difference between channel presented.
In this work, the edge charge trapping at interface of gate oxide/drain extension caused by Fowler–Nordheim injection is determined quantitatively using a simple approach to analyze change drain band-to-band tunneling current. For both pure and nitrided oxides with an oxide thickness 6.5 nm, positive observed while net in above channel negative. It found that nitrogen can enhance trapping. The results could be explained terms creation fixed charges as result electrochemical reactions...
In this letter, we report an approach to quantitative study of the relationship between oxide charge trapping over drain extension due electrical stress and off-state leakage current. It is found that positive leads a significant increase in current if edge direct tunneling (EDT) dominant but contrast, it reduction band-to-band Si surface dominant. A EDT regime established. From measurement regime, can be determined by using developed study.
This paper reports a comprehensive study of the edge charge trapping in gate oxide overlapping drain extension caused by Fowler-Nordheim (FN) injection and hot-carrier injection. In this was determined using novel approach to analyze change band-to-band tunneling current measured with three-terminal gate-controlled-diode (GCD) configuration. It found that both FN (positive or negative) led positive trapping. On other hand, power-law dependence on stress time always observed for all cases....
Effects of Ge oxidation states in GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> interfacial layer (IL) on electrical characteristics pMOSFET with ~0.5 nm EOT are comprehensively studied. The gate leakage current density (J xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ) is impacted by contents <sup xmlns:xlink="http://www.w3.org/1999/xlink">+1</sup> and xmlns:xlink="http://www.w3.org/1999/xlink">+2</sup> IL. hole mobility...
In this study, a novel technique, i.e. the direct-current current–voltage method is used to quantitatively examine influence of nitrogen concentration in nitrided oxides on interface trap generation caused by Fowler–Nordheim injection. A power-law stress time dependence always observed. As increased, exponent power law reduced leading significant suppression generation. However, no polarity from These experimental findings are clarify two models that have been proposed explain degradation...
Based on the motion principle of gastropod, a novel interventional minimal invasive robot which has ability to run smoothly in biological lumen with impulsive flowing liquid been presented. Simulation models micro operating straight or bend blood vessels have established software Fluent. Blood flow distribution and impact force acting by simulated calculated. All results will provide strong proofs for structure design control robot.
A high peak hole mobility of 412 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V-sec at N <sub xmlns:xlink="http://www.w3.org/1999/xlink">inv</sub> =1.8×10 xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , a very low J xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ~10 xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> A/cm V =V...
Innovation capability is one of the most important abilities that college students should foster during their education period.Explaining innovation to clearly primary task and also a very step in study courses.Based on medicated applications drug-loaded biomaterials for providing different kinds drug controlled release profiles, this paper shows an interesting angle teachers achieve vivid teaching materials majoring material science engineering.In addition polymer-based materials, with...
In this study, a novel technique, i.e. the direct-current current-voltage (DCIV) method is used to quantitatively examine influence of nitrogen concentration in nitrided oxide on interface trap generation caused by DC and dynamic Fowler-Nordheim (FN) injections. For both FN stresses, power-law stress-time dependence always observed, increase leads significant suppression generation. stress, increases with frequency, but at each frequency reduced higher concentration. A comparison between...
In this work, a simple approach is applied to quantitative study of the influence oxide charge trapping over drain extension due electrical stress on off-state leakage current. It found that positive leads significant increase in current if edges direct tunneling (EDT) dominant For nitrided gate oxide, with nitrogen concentration becomes more nitrogen-enhanced trapping.