A5059682316- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Copper-based nanomaterials and applications
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Graphene research and applications
- Conducting polymers and applications
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic properties of thin films
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Photovoltaic System Optimization Techniques
- Luminescence Properties of Advanced Materials
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Advanced Surface Polishing Techniques
- Advanced Thermoelectric Materials and Devices
Nanjing University of Aeronautics and Astronautics
2016-2025
Changzhou University
2016-2025
Ministry of Industry and Information Technology
2021-2023
Nanjing Library
2016-2019
National Institute of Advanced Industrial Science and Technology
1995-2004
Institute of Molecular Functional Materials
2000
State Key Laboratory of Functional Materials for Informatics
1999-2000
Shanghai Institute of Microsystem and Information Technology
1989-1999
Chinese Academy of Sciences
1999
Electrotechnical Institute
1994
Carbon dots (CDs) are synthesized by the solvothermal method with four kinds of solvents including water, dimethylformamide (DMF), ethanol, and acetic acid (AA). The aqueous solutions above CDs emit multiple colors blue (470 nm), green (500 yellow (539 orange (595 nm). structures, sizes, chemical composition characterized transmission electron microscopy (TEM), dynamic light scattering (DLS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), photoelectron spectroscopy (XPS)....
Developing efficient crystalline silicon/wide-band gap metal-oxide thin-film heterostructure junction-based silicon (c-Si) solar cells has been an attractive alternative to the thin film-based counterparts. Herein, nickel oxide films are introduced as hole-selective layer for c-Si and prepared using reactive sputtering technique with target of metallic nickel. An optimal Ni3+ self-doped NiOx film is obtained by tuning oxygen atmosphere construct optimized c-Si/NiOx band alignment. A SiOx...
Al doped ZnO (AZO) films were deposited on glass, polyethylene naphthalate (PEN) and terephthalate (PET) at room temperature by radio frequency magnetron sputtering. The structural, surface morphology, electrical optical properties of the AZO characterized X-ray diffractometry (XRD), atomic force microscopy (AFM), Hall effect measurement ultraviolet-visible spectrometer, respectively. exhibit highly c-axis preferred orientation, film glass exhibits compressive stress while that plastic...
Embedded noble metal nanostructures and surface anti-reflection (AR) layers affect the optical properties of methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells significantly. Herein, by employing a combined finite element method genetic algorithm approach, we report five different types CH3NH3PbI3 introducing embedded Ag nanoparticles within layer and/or top ITO cylinder grating as an AR layer. The maximum photocurrent was optimized to reach 23.56 mA/cm2, which 1.09/1.17 times...
Perovskite solar cells (PSCs) have achieved remarkable performance advancements over the past decade. In inverted p-i-n PSCs, commonly utilized electron transport layers (ETL), such as C60 and PCBM, are associated with notable stability challenges high production costs. This study reports on a novel highly stable perovskite cell that employs iron-doped zinc oxide (FZO) nanoparticles ETL nickel (NiOx) hole layer, demonstrating power conversion efficiency (PCE) of ∼12%. comparison PSCs utilize...