A5049930558- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Photonic and Optical Devices
- Radiation Effects in Electronics
- Advanced Memory and Neural Computing
- Low-power high-performance VLSI design
- Parallel Computing and Optimization Techniques
- Embedded Systems Design Techniques
- Nanowire Synthesis and Applications
- Semiconductor Lasers and Optical Devices
- Advancements in Battery Materials
- VLSI and Analog Circuit Testing
- Advanced DC-DC Converters
Leibniz Institute for High Performance Microelectronics
2016-2021
Institut für Solartechnologien (Germany)
2011
In recent years, several radiation tests on IHP's 0.25 μm SiGe BiCMOS technology SGB25V have been performed. For evaluation by the European Space Components Coordination (ESCC), it has decided to spin off a dedicated radiation-hard SGB25RH for applications in space and high energy physics. this special hard layouts IP blocks are developed. Because use same fabrication process, results from investigations also valid as long standard devies used. All devices under test showed acceptable...
In this work the electrical performance of a Rad- Hard designed 1T-1R device based on combination an Enclosed Layout Transistor (ELT) and TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ti/TiN resistor is presented for first time. Moreover, architectural solution 1Mbit radiation hard RRAM array implementation proposed.
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite interconnects. The chipset comprises vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for flip-chip assembly into mid-board optics (MBO) module. ICs designed in IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness radiation environments high-speed performance...
We report on a novel radiation hardening by design (RHBD) approach for mitigation of total ionization dose (TID) induced drain leakage currents and single event transient (SET) in digital circuits fabricated 130 nm bulk SiGe BiCMOS technology. In order to avoid significant TID increase NMOS transistors channel pinch-off PMOS due positive charges trapped at the lateral shallow trench insulator silicon interface we introduced junction isolation (JI) MOS regions. The device construction...