A5087699986- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Thin-Film Transistor Technologies
- Metamaterials and Metasurfaces Applications
- Optical Network Technologies
- Advanced optical system design
- Advanced Fiber Laser Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Orbital Angular Momentum in Optics
- Photonic Crystals and Applications
- Random lasers and scattering media
- Laser Design and Applications
- Laser Material Processing Techniques
- Nanofabrication and Lithography Techniques
Chalmers University of Technology
2018-2025
Nanosc (Sweden)
2021-2024
New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, visible and near-infrared range is interest a sensing communication applications. The integration energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), important expanding application portfolio However, most demonstrated approaches are not easily scalable towards low-cost large-volume production. this work, we...
Optical interconnects (OIs) based on vertical-cavity surface-emitting lasers (VCSELs) are the main workhorse within data centers, supercomputers, and even vehicles, providing low-cost, high-rate connectivity. VCSELs must operate under extremely harsh time-varying conditions, thus requiring adaptive flexible designs of communication chain. Such can be built mathematical models (model-based design) or learned from (machine learning (ML) design). Various ML techniques have recently come to...
Flat metaoptics components are looking to replace classical optics elements and could lead extremely compact biophotonics devices if integrated with on-chip light sources detectors. However, using metasurfaces shape into wide angular range wavefronts high efficiency, as is typically required in high-contrast microscopy applications, remains a challenge. Here we demonstrate curved GaAs metagratings on vertical-cavity surface-emitting lasers (VCSELs) that enable illumination total internal...
This article deals for the first time with electrical degradation of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) silicon photonics (SiPh). We analyzed reliability these devices by submitting them to high current stress. The experimental results showed that stress induced: 1) a significant increase in series resistance, occurring two separated time-windows and 2) lowering turn-on voltage. To understand origin such phenomena, we simulated <inline-formula...
Increasing the baud rate in optical interconnects (OIs) will require use of more sophisticated driver and receiver electronics. This help overcome stagnated bandwidth Vertical-Cavity Surface-Emitting Laser (VCSEL) pin-photodetector. Next generation OIs operating at single lane rates 50+ Gbaud therefore careful co-optimization electronics optoelectronics. To facilitate this work there is a need an accurate equivalent circuit for optoelectronic components, functioning over broad drive current...
For the first time we investigate optical degradation of vertical-cavity silicon-integrated lasers VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). The study is based on combined electro-optical characterization VCSIL, submitted to constant-current stress tests different current levels. original results obtained within manuscript indicate that related diffusion impurities. Remarkably, depending region through which these impurities are migrating, process...
Optical interconnects (OIs) continue to require more and sophisticated driver receiver electronics as higher baud rates are pushed in datacom, mainly due the bandwidth stagnation of optoelectronic components such vertical-cavity surface-emitting laser (VCSEL) transmitter well photodetector (PD) receiver. Another important focus is maintaining high energy efficiency for OIs. For both cases, a reliable equivalent circuit model high-speed VCSELs required link optimization. This work an...
Using a vertical-cavity surface-emitting laser (VCSEL) equivalent circuit model based on two carrier rate equations to include effects of dynamics, we study the impact transport and capture small- large-signal modulation response high-speed VCSELs. The also accounts for parasitics, current-induced self-heating, gain compression. A variation effective time from 1 15 ps is found have large small-signal response, with 3 dB bandwidth decreasing 40 GHz transitioning under-damped over-damped. This...
The fully epitaxial integration of IR laser sources into modern photonic circuits built on Si or SOI wafers is severely limited by the thermal- and lattice-constant mismatch between substrate III-V layers that are required to achieve efficient solid-state lasing in near infrared range. To overcome these limitations, commercially-available SiPh technologies employ selective wafer/device bonding techniques allow separately grow emitter integrate it integrated circuit (PIC) at a later...
Recent advancements in the integration of flat metaoptic components with light sources and detectors have created exciting possibilities for developing compact optical measurement devices. We demonstrated monolithic curved GaAs metagratings on vertical-cavity surface-emitting lasers (VCSELs), creating an ultra-compact illumination module both total internal reflection dark field microscopy techniques. Based unconventional design that circumvents aspect ratio-dependent etching problems...
Flat metaoptics devices are paving a path towards compact and integrated photonics solutions. Composed of engineered subwavelength nanostructures, they offer freedom to shape light alleviate alignment constraints compared traditional optics. Utilizing conventional nanofabrication methods, their potential amplifies when combined with on-chip sources detectors. In our study, we introduce laser-integrated dielectric metasurfaces tailored for biophotonics applications. Our goal was sculpt the...
Emerging markets for optical interconnects with VCSEL-based transceivers require VCSELs superior wide temperature performance. One of the prime parameters controlling dependence VCSEL performance is wavelength detuning. We study impact detuning on 25 Gbaud class 850 nm over a range -40 to 125°C, as applicable e.g. automotive networking. Two different detuning, but otherwise identical, are compared. Basic static and dynamic their dependencies extracted. The results show that appropriate...
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite interconnects. The chipset comprises vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for flip-chip assembly into mid-board optics (MBO) module. ICs designed in IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness radiation environments high-speed performance...
We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit is unique in accounting carrier capture dynamics between active region continuum quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C 85°C.
Laser diodes are of paramount importance for on-chip telecommunications applications, and a wide range sensing devices that require near-infrared sources. In this work, the under test vertical-cavity silicon-integrated lasers (VCSILs) designed operation at 845 nm in photonic integrated circuits (PICs). We focus on analysis degradation optical performance during aging. To investigate reliability devices, we carried out several stress tests constant current, ranging from 3.5 mA to 4.5...
Optical and electrical degradation of novel micro-transfer-printed VCSILs is investigated. Modeling experimental data suggests that the main mechanism represented by relocation impurities, originating from p-side, toward active region.
In this work we present the electrical modeling of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We tested reliability devices by submitting them to high current stress, corresponding ≈ 20xI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> , observe degradation as a function time. During stress experiment, monitored characteristics at regular intervals and observed two separate phenomena:...
Optical interconnects (OIs) based on vertical-cavity surface-emitting lasers (VCSELs) are the main workhorse within data centers, supercomputers, and even vehicles, providing low-cost, high-rate connectivity. VCSELs must operate under extremely harsh time-varying conditions, thus requiring adaptive flexible designs of communication chain. Such can be built mathematical models (model-based design) or learned from (machine learning (ML) design). Various ML techniques have recently come to...