About
Contact & Profiles
A5020788086
Research Areas
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
SK Group (South Korea)
2022
This article introduces a 192-Gb 896-GB/s 12-high stacked third-generation high-bandwidth memory (HBM3 DRAM) with low power consumption and high-reliability traits. New design schemes features, including internal low-voltage signaling, center strobe calibration, through-silicon via (TSV) auto-calibration, symbol-correcting in-DRAM ECC, machine-learning-based layout optimization, allow large amounts of data transfers among the vertically base core dies limited delay mismatch or SI...
10.1109/jssc.2022.3193354
article
EN
IEEE Journal of Solid-State Circuits
2022-08-17
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