A5064977600- Photonic and Optical Devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in PLL and VCO Technologies
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Low-power high-performance VLSI design
SK Group (South Korea)
2022-2024
This article introduces a 192-Gb 896-GB/s 12-high stacked third-generation high-bandwidth memory (HBM3 DRAM) with low power consumption and high-reliability traits. New design schemes features, including internal low-voltage signaling, center strobe calibration, through-silicon via (TSV) auto-calibration, symbol-correcting in-DRAM ECC, machine-learning-based layout optimization, allow large amounts of data transfers among the vertically base core dies limited delay mismatch or SI...
The increase in GPU-based AI applications, cloud-based gaming, and video streaming services has driven the need for new a graphics memory that operates at higher bandwidth power efficiency than existing GDDR6 SDRAM, leading to introduction of GDDR7 standard [1]. Since performance degradation due thermal throttling, cost, device reliability are major development considerations high-power PAM3 signaling is applied on single-ended pins improve consumption, while maintaining clock frequency [2]....