A5015454590- ATP Synthase and ATPases Research
- Genetics and Neurodevelopmental Disorders
- Mitochondrial Function and Pathology
- X-ray Diffraction in Crystallography
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- DNA Repair Mechanisms
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Machine Learning in Materials Science
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- PARP inhibition in cancer therapy
- 2D Materials and Applications
- Cancer therapeutics and mechanisms
- Cancer Mechanisms and Therapy
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Chalcogenide Semiconductor Thin Films
- Nuclear Receptors and Signaling
- Higher Education and Employability
- Higher Education Learning Practices
- Inorganic Chemistry and Materials
- Heusler alloys: electronic and magnetic properties
- Labor market dynamics and wage inequality
Seoul National University
2015-2022
Abstract Ataxia telangiectasia and Rad3-related (ATR) can be considered an attractive target for cancer treatment due to its deleterious effect on cells harboring a homologous recombination defect. The aim of this study was investigate the potential use ATR inhibitor, AZD6738, treat gastric cancer. In SNU-601 with dysfunctional ATM, AZD6738 led accumulation DNA damage RAD51 foci formation, S phase arrest, caspase 3–dependent apoptosis. contrast, SNU-484 functional ATM were not sensitive...
Abstract Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic photovoltaic devices. Since the gap is a primary material property that affects device performance, large band-gap databases are useful selecting optimal each application. While there exist several theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as underestimation metastable magnetism....
Abstract Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have presented to date, facile and scalable realization high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te by sputtering, oxidation subsequent...
Abstract The ultimate transparent electronic devices require complementary and symmetrical pairs of n-type p-type semiconductors. While several oxide semiconductors like InGaZnO ZnO are available being used in consumer electronics, there practically no oxides that comparable to the counterpart spite tremendous efforts discover them. Recently, high-throughput screening with density functional theory calculations attempted identify candidate oxides, but none suggested materials was verified...
Abstract Throughout the past decades, doped-ZnO has been widely used in various optical, electrical, magnetic, and energy devices. While almost every element Periodic Table was doped ZnO, systematic computational study is still limited to a small number of dopants, which may hinder firm understanding experimental observations. In this report, we systematically calculate single-element doping property ZnO using first-principles calculations. We develop an automation code that enables...
Ataxia telangiectasia and Rad3‐related (ATR) proteins are sensors of DNA damage, which induces homologous recombination (HR)‐dependent repair. ATR is a master regulator damage repair (DDR), signaling to control replication, apoptosis. Therefore, the pathway might be an attractive target for developing new drugs. This study was designed investigate antitumor effects inhibitor, AZD6738 its underlying mechanism in human breast cancer cells. Growth inhibitory against cell lines were studied...
Sustained cell proliferation and cycle acceleration in cancer cells inherently increase DNA damage, which interferes with homeostatic replication transcription. Ataxia telangiectasia Rad3-related (ATR) is crucial for initiation of the damage response, ATR inhibitors, such as elimusertib, induce increased stress damage. We investigated anti-tumor effects elimusertib its mechanism action relation to stress. Anti-tumor were evaluated by MTT assay colony formation breast lines vitro, xenografts...
High-k dielectrics, materials having a large band gap (Eg) and high dielectric constant (k) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between Eg k, with values both properties are rare. Therefore, massive databases on k will be useful identifying optimal high-k materials. While experimental theoretical data oxides accumulating, corresponding information is scarce for non-oxide dielectrics anions such as C, N, F, P, S, Cl....
With potentials to outperform traditional semiconductors, oxide semiconductors are penetrating into a wide range of energy, environmental, and electronic applications. However, an insufficient library p-type oxides is major obstacle against complete electronics. To identify promising oxides, we carry out large-scale computational screening over 17,700 oxygen-containing compounds using the hydrogen descriptor that was shown select reliably. enable high-throughput screening, use in initial...
Pim kinases are highly conserved serine/threonine kinases, and different expression patterns of each isoform (Pim-1, Pim-2, Pim-3) have been observed in various types human cancers, including gastric cancer. AZD1208 is a potent selective inhibitor that affects all three isoforms Pim. We investigated the effects as single agent combination with an Akt cancer cells.The antitumor activity with/without was evaluated large panel cell lines through growth inhibition assays. The underlying...
This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the concept that valence band edge from O 2p orbitals in majority of metal oxides becomes delocalized by hybridizing Se 4p and Sn 5s orbitals. As loading increased, SnSeO film structures were transformed tetragonal SnO to orthorhombic SnSe, accompanied an increase amorphous phase portion smooth morphologies. The SnSe0.56O0.44 annealed at 300 °C exhibited highest Hall mobility (μHall), 15.0 cm2 (V s)−1, hole...
Transparent conducting oxide (TCO) is a promising material system for transparent electrodes, which one of the most essential elements in current electronic and energy devices. In particular, In-based TCOs such as Sn:In2O3 (ITO) In–Ga–Zn–O (IGZO) have shown large optical band gap high electrical conductivity, sufficient applications. However, an expensive element, hampers its facile industrial application. Moreover, show abrupt decrease conductivity when their thickness decreases below ∼100...
Recently, Jun et al. ( Adv. Mater. 2018 , 30 1706573) reported Sn‐doped amorphous phases of CuI a ‐CuI) as new class transparent p‐type semiconductors. It is surprising that high mobilities are found despite structures tend to localize carriers, particularly the directional p orbitals anions. To reveal microscopic origin semiconductors, density functional theory calculations performed, and structural electrical properties ‐CuI investigated. Amorphous models from melt‐quench simulations...
Abstract Introduction: The DNA repair system is critical for maintaining genomic integrity. In particular, the homologous recombination (HR) pathway, on that repairs double-strand breaks (DSBs), directly associated with cancer development. Many cells could contain mutations in genes involved HR pathway including BRCA1/2, ATM, ATR, and RAD51. ATR can be activated by various types of damage it initiates damage-induces signaling cascade. As a result, components are considered promising...
Abstract Introduction: Pim kinases are highly conserved serine/threonine that control proliferation and survival pathways in cancer cells. Different expression patterns of each isoforms (Pim-1, Pim-2, Pim-3) have been observed various types human including gastric cancer. AZD1208 is a potent selective inhibitor affects all three Pim. We investigated the effect as single agent or combination with an Akt on growth cell death Materials Methods: The antitumor activity with/without was evaluated...
<p>Gastric cancer cell lines show heterogeneous responses to AZD6738</p>
<p>Conflict of Interest Form</p>
<p>Effects of AZD6738 on DNA damage repair capacity</p>
<p>ATM inhibition sensitizes resistant cells to AZD6738</p>
<div>Abstract<p>Ataxia telangiectasia and Rad3-related (ATR) can be considered an attractive target for cancer treatment due to its deleterious effect on cells harboring a homologous recombination defect. The aim of this study was investigate the potential use ATR inhibitor, AZD6738, treat gastric cancer.</p><p>In SNU-601 with dysfunctional ATM, AZD6738 led accumulation DNA damage RAD51 foci formation, S phase arrest, caspase 3–dependent apoptosis. In contrast,...
<p>Supplementary Figure Legends</p>